
ON Semiconductor
Complementary Silicon Power
Transistors
The MJ15003 and MJ15004 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
• High Safe Operating Area (100% Tested) —
250 W @ 50 V
• For Low Distortion Complementary Designs
• High DC Current Gain —
= 25 (Min) @ IC = 5 Adc
h
FE
MAXIMUM RATINGS
ООООООООООООООООООООО
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Base Current — Continuous
Emitter Current — Continuous
Total Power Dissipation @ TC = 25C
Derate above 25C
Operating and Storage Junction
ОООООООООО
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
I
E
P
D
TJ, T
ÎÎÎ
stg
Value
140
140
5
20
5
25
250
1.43
–65 to +200
ÎÎÎÎ
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/C
C
Î
NPN
MJ15003
PNP
MJ15004
*ON Semiconductor Preferred Device
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
250 WATTS
CASE 1–07
TO–204AA
(TO–3)
*
*
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes:
ОООООООООО
1/16″ from Case for 10 seconds
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev . 9
Symbol
R
θ
JC
T
L
ÎÎÎ
Max
0.70
C/W
265
ÎÎÎÎ
1 Publication Order Number:
Unit
C
Î
MJ15003/D

MJ15003 MJ15004
*ELECTRICAL CHARACTERISTICS (T
= 25C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (1)
(I
= 200 mAdc, IB = 0)
C
ОООООООООООООООООООО
Collector Cutoff Current
(V
= 140 Vdc, V
CE
ОООООООООООООООООООО
(V
= 140 Vdc, V
CE
= 1.5 Vdc)
BE(off)
= 1.5 Vdc, TC = 150C)
BE(off)
Collector Cutoff Current
(V
ОООООООООООООООООООО
= 140 Vdc, IB = 0)
CE
Emitter Cutoff Current
(V
= 5 Vdc, IC = 0)
EB
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Baised
ОООООООООООООООООООО
(V
= 50 Vdc, t = 1 s (non repetitive))
CE
= 100 Vdc, t = 1 s (non repetitive))
(V
CE
ОООООООООООООООООООО
ON CHARACTERISTICS
DC Current Gain
(I
= 5 Adc, VCE = 2 Vdc)
C
Collector Emitter Saturation Voltage
ОООООООООООООООООООО
(I
= 5 Adc, IB = 0.5 Adc)
C
Base Emitter On Voltage
(I
= 5 Adc, VCE = 2 Vdc)
ОООООООООООООООООООО
C
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(I
= 0.5 Adc, VCE = 10 Vdc, f
C
Output Capacitance
ОООООООООООООООООООО
(V
= 10 Vdc, IE = 0, f
CB
test
= 0.5 MHz)
test
= 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
Symbol
V
CEO(sus)
ÎÎÎ
I
CEX
ÎÎÎ
I
CEO
ÎÎÎ
I
EBO
I
S/b
ÎÎÎ
ÎÎÎ
h
FE
V
CE(sat)
ÎÎÎ
V
BE(on)
ÎÎÎ
f
T
c
ob
ÎÎÎ
Min
140
Î
—
Î
—
—
Î
—
Î
5
1
Î
25
—
Î
—
Î
2
—
Î
Max
—
ÎÎ
100
ÎÎ
2
250
ÎÎ
100
ÎÎ
—
—
ÎÎ
150
1
ÎÎ
2
ÎÎ
—
1000
ÎÎ
Unit
Vdc
Î
µAdc
Î
mAdc
µAdc
Î
µAdc
Adc
Î
Î
Vdc
Î
Vdc
Î
MHz
pF
Î
20
15
T
C
= 25°C
10
7
5
3
2
T
= 200°C
J
BONDING WIRE LIMITED
1
0.7
, COLLECTOR CURRENT (AMP)
0.5
C
I
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
0.3
0.2
2 3 50 70 10020 30
5 7 10 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active–Region Safe Operating Area
CEO
150
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
= 200C; TC is
J(pk)
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
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2

MJ15003 MJ15004
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
C
E
D
2 PL
0.13 (0.005) Y
U
V
H
L
2
1
G
K
M
–Y–
–T–
B
T
SEATING
PLANE
M
Q
M
–Q–
0.13 (0.005) T
M
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERSINCHES
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MJ15003 MJ15004
PowerBase is a trademark of Semiconductor Components Industries, LLC.
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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MJ15003/D