Page 1
MJ11028, MJ11030,
Î
Î
Î
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High−Current
Complementary Silicon
Power Transistors
http://onsemi.com
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
• High DC Current Gain − h
= 1000 (Min) @ IC = 25 Adc
FE
hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated I
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200_C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector−Emitter Voltage MJ11028/29
Collector−Base Voltage MJ11028/29
Emitter−Base Voltage V
Collector Current − Continuous
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C
Derate Above 25°C @ TC = 100_C
Operating and Storage Junction
Temperature Range
− Peak (Note 1)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Maximum Lead Temperature for
Soldering Purposes for v 10 seconds
ОООООООООО
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
= 25°C unless otherwise noted)
J
V
MJ11030
MJ11032/33
MJ11030
MJ11032/33
CEO
V
CBO
EBO
P
TJ, T
T
Î
R
I
C
B
D
stg
L
q
JC
ÎÎÎ
60
90
120
60
90
120
5.0 Vdc
50
100
2.0 Adc
300
1.71
−55 to +200
275
0.58 °C/W
Vdc
Vdc
Adc
W
W/°C
°C
_C
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60 − 120 VOLTS
300 WATTS
TO−204 (TO−3)
CASE 197A
STYLE 1
MARKING DIAGRAM
MJ110xxG
AYYWW
MEX
MJ110xx = Device Code
xx = 28, 29, 30, 32, 33
G = Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 5
1 Publication Order Number:
MJ11028/D
Page 2
MJ11028, MJ11030, MJ11032 (NPN)
PNP
MJ11029
MJ11033
COLLECTOR
NPN
MJ11028
MJ11030
MJ11032
BASE
≈ 3.0 k ≈ 25
BASE
≈ 3.0 k ≈ 25
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) MJ11028, MJ11029
(IC = 1 00 mAdc, IB = 0) MJ11030
Collector−Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1 kW) MJ11028, MJ11029
(VCE = 90 Vdc, RBE = 1 kW) MJ11030
(VCE = 120 Vdc, RBE = 1 kW) MJ11032, MJ11033
(VCE = 60 Vdc, RBE = 1 kW, TC = 150_C) MJ11028, MJ11029
(VCE = 120 Vdc, RBE = 1 kW, TC = 150_C) MJ11032, MJ11033
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
Collector−Emitter Leakage Current
(VCE = 50 Vdc, IB = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 25 Adc, VCE = 5 Vdc)
(IC = 50 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage
(IC = 25 Adc, IB = 250 mAdc)
(IC = 50 Adc, IB = 500 mAdc)
Base−Emitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
(IC = 50 Adc, IB = 300 mAdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
= 25_C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
MJ11032, MJ11033
COLLECTOR
EMITTER
V
(BR)CEO
I
CER
I
EBO
I
CEO
h
FE
V
CE(sat)
V
BE(sat)
60
90
120
−
−
−
−
−
− 5
− 2
1 k
400
−
−
−
−
−
−
−
2
2
2
10
10
18 k
−
2.5
3.5
3.0
4.5
Vdc
mAdc
mAdc
mAdc
−
Vdc
Vdc
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2
Page 3
MJ11028, MJ11030, MJ11032 (NPN)
)
ORDERING INFORMATION
Device Package Shipping
MJ11028 TO−204
MJ11028G TO−204
MJ11029 TO−204
MJ11029G TO−204
MJ11030 TO−204
MJ11030G TO−204
MJ11032
MJ11032G
MJ11033
MJ11033G
(Pb−Free)
(Pb−Free)
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
100 Units / Tray
100
50
20
10
5
2
1
0.5
, COLLECTOR CURRENT (AMP)
C
I
0.2
0.1
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11032, 33
0.5 1 2 5 10 20 50 200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
100 k
VCE = 5 V
TJ = 25°C
5 k
2 k
1 k
MJ11028, MJ11030, MJ11032 NPN
500
200
100
12 510 10020 50
MJ11029, MJ11033 PNP
IC, COLLECTOR CURRENT (AMP)
, DC CURRENT GAIN
FE
h
50 k
20 k
10 k
80 ms
(PULSED)
100
There are two limitations on the power−handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
= 200_C; TC is
J(pk)
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
5
MJ11028, MJ11030, MJ11032 NPN
4
3
2
1
, COLLECTOR−EMITTER VOLTAGE (VOLTS
CE
V
0
1 2 5 10 10020 50
MJ11029, MJ11033 PNP
TJ = 25°C
IC/IB = 100
V
CE(sat)
3
IC, COLLECTOR CURRENT (AMP)
V
BE(sat)
80 ms
(PULSED)
Figure 3. DC Current Gain
Figure 4. “On” Voltage
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3
Page 4
MJ11028, MJ11030, MJ11032 (NPN)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 197A−05
ISSUE K
A
N
C
E
2 PLD
0.30 (0.012) Y
U
V
H
L
2
1
G
−T−
K
M
−Y−
B
T
SEATING
PLANE
M
Q
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 1.530 REF 38.86 REF
B 0.990 1.050 25.15 26.67
C 0.250 0.335 6.35 8.51
D 0.057 0.063 1.45 1.60
E 0.060 0.070 1.53 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N 0.760 0.830 19.31 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERSINCHES
−Q−
0.25 (0.010) T
M
M
Y
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJ11028/D
4
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