Datasheet MJ 11015 ONS Datasheet

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ON Semiconductor

High-Current Complementary
Silicon Transistors

. . . for use as output devices in complementary general purpose

amplifier applications.

• High DC Current Gain —

= 1000 (Min) @ IC – 20 Adc

h

FE

• Monolithic Construction with Built–in Base Emitter Shunt

Resistor

• Junction Temperature to +200C

MAXIMUM RATINGS

MJ11015
MJ11016

ÎÎÎ

120
120

5

30

1

200

1.15

Max

0.87
275

ÎÎÎÎ

ООООООООО

Rating

Collector–Emitter Voltage

Symbol

ÎÎ

V
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Device Dissipation @TC = 25C

Derate above 25C @ T

Operating Storage Junction

ООООООООО

Temperature Range

= 100C

C

TJ, T

ÎÎ

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case
Maximum Lead Temperature for

ООООООООООО

Soldering Purposes for  10 Seconds.

CEO

V
V

P

CB
EB

I

C

I

B

D

MJ11012

ÎÎ

60
60

stg

–55 to +200

ОООООО

Symbol

R

θ

JC

T

L

ÎÎ

Unit

Î

Vdc
Vdc
Vdc
Adc
Adc

Watts
W/C

C

Î

Unit

C/W

C

Î

PNP

MJ11015

NPN

MJ11012

MJ11016

*ON Semiconductor Preferred Device

30 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60–120 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

*

PNP

MJ11015

COLLECTOR

NPN
MJ11012
MJ11016

BASE

BASE

≈ 8.0 k ≈ 40

EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 4

1 Publication Order Number:

COLLECTOR

≈ 8.0 k ≈ 40

EMITTER

MJ11012/D

MJ11015 MJ11012 MJ11016

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ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted.)

C

Characteristics

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(I

= 100 mAdc, IB = 0) MJ11012

C

ОООООООООООООООООООО

MJ11015, MJ11016

Collector–Emitter Leakage Current

(V

ОООООООООООООООООООО

ОООООООООООООООООООО

ОООООООООООООООООООО

= 60 Vdc, RBE = 1k ohm) MJ11012

CE

(V

= 120 Vdc, RBE = 1k ohm) MJ11015, MJ11016

CE

(V

= 60 Vdc, RBE = 1k ohm, TC = 150C) MJ11012

CE

(V

= 120 Vdc, RBE = 1k ohm, TC = 150C) MJ11015, MJ11016

CE

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

BE

Collector–Emitter Leakage Current

ОООООООООООООООООООО

(V

= 50 Vdc, IB = 0)

CE

ON CHARACTERISTICS(1)

DC Current Gain

(I

= 20 Adc,VCE = 5 Vdc)

C

ОООООООООООООООООООО

= 30 Adc, VCE = 5 Vdc)

(I

C

Collector–Emitter Saturation Voltage

ОООООООООООООООООООО

(I

= 20 Adc, IB = 200 mAdc)

C

= 30 Adc, IB = 300 mAdc)

(I

C

ОООООООООООООООООООО

Base–Emitter Saturation Voltage

(I

= 20 A, IB = 200 mAdc)

C

ОООООООООООООООООООО

= 30 A, IB = 300 mAdc)

(I

C

DYNAMIC CHARACTERISTICS

Current–Gain Bandwidth Product

(I

= 10 A, VCE = 3 Vdc, f = 1 MHz)

C

ОООООООООООООООООООО

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  2.0%.

Symbol

V

(BR)CEO

ÎÎÎ

I

CER

ÎÎÎ

ÎÎÎ

ÎÎÎ

I

EBO

I

CEO

ÎÎÎ

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

ÎÎÎ

V

BE(sat)

ÎÎÎ

h

fe

ÎÎÎ

Min

60

Î

120

—

Î

—

Î

—
—

Î

—

—

Î

1000

Î

200

Î

—
—

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—

Î

—

4

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Max

—

ÎÎ

—

1

ÎÎ

1

ÎÎ

5
5

ÎÎ

5

1

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—

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—

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3
4

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3.5

ÎÎ

5

—

ÎÎ

Unit

Vdc

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mAdc

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mAdc

mAdc

Î

—

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Vdc

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Vdc

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MHz

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http://onsemi.com

2

MJ11015 MJ11012 MJ11016

D

30 k
20 k

10 k

, DC CURRENT GAIN

FE

h

700
500

300

V, VOLTAGE (VOLTS)

7 k
5 k

3 k
2 k

PNP MJ11015
NPN MJ11012, MJ11016

VCE = 5 Vdc

= 25°C

T

J

0.3

0.5 0.7 1 2 3 10 20 30

IC, COLLECTOR CURRENT (AMP)

5 7 100

Figure 2. DC Current Gain (1)

5

4

3

2

1

0

0.1

PNP MJ11015
NPN MJ11012, MJ11016

T

= 25°C

J

I

= 100

C/IB

IC, COLLECTOR CURRENT (AMP)

V

V

CE(sat)

BE(sat)

Figure 4. “On” Voltages (1)

2

1

0.5

0.2

0.1

0.05

0.02

0.01

0.005

, SMALL-SIGNAL CURRENT GAIN (NORMALIZE

10

FE

h

PNP MJ11015
NPN MJ11012, MJ11016

VCE = 3 Vdc
I

= 10 mAdc

C

= 25°C

T

J

20 30 50 70 200 300 500 1.0 k

f, FREQUENCY (kHz)

700

Figure 3. Small–Signal Current Gain

50

20
10

5

2

1

0.5

0.2

0.1

100

0.05

, COLLECTOR CURRENT (AMP)

C

I

0.02

0.01

27

BONDING WIRE LIMITATION
THERMAL LIMITATION @ T
SECOND BREAKDOWN LIMITATION

MJ11015, MJ11016

35 10

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

20

C

MJ11012

30

= 25°C

50

70 100220500.2 0.5 1 105

200

Figure 5. Active Region DC Safe Operating Area

There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I

– V

C

CE

limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.

http://onsemi.com

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.

3

MJ11015 MJ11012 MJ11016

PACKAGE DIMENSIONS

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

A

N

C

E

2 PL

D

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

–Y–

–T–

SEATING
PLANE

M

Q

T

M

B

–Q–

0.13 (0.005) T

M

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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4

MJ11012/D