Datasheet MJ10012, MJH10012 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

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The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors

designed for automotive ignition, switching regulator and motor control applications.

• Collector–Emitter Sustaining Voltage —
V

CEO(sus)

= 400 Vdc (Min)

• 175 Watts Capability at 50 Volts

• Automotive Functional Tests

MAXIMUM RATINGS

Rating

Symbol

MJ10012

MJH10012

Unit

Collector–Emitter Voltage

V

CEO

400

Vdc

Collector–Emitter Voltage

(RBE = 27 Ω)

V

CER

550

Vdc

Collector–Base Voltage

V

CBO

600

Vdc

Emitter–Base Voltage

V

EBO

8.0

Vdc

Collector Current — Continuous

— Peak (1)

I

C

10
15

Adc

Base Current

I

B

2.0

Adc

Total Power Dissipation

@ TC = 25_C
@ TC = 100_C
Derate above 25_C

P

D

175
100

1.0

118

47.5

1.05

Watts
Watts
W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–65 to +200

–55 to +150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.0

0.95

_

C/W

Maximum Lead Temperature for

Soldering Purposes: 1/8″ from
Case for 5 Seconds

T

L

275

275

_

C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ10012/D

 Motorola, Inc. 1995

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10 AMPERE

POWER TRANSISTORS

DARLINGTON NPN

SILICON

400 VOLTS

175 AND 118 WATTS

CASE 1–07

TO–204AA

(TO–3)

MJ10012

CASE 340D–01

TO–218 TYPE

MJH10012

≈

1 k≈ 30

EMITTER

BASE

COLLECTOR

REV 2

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Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Figure 1)

(IC = 200 mAdc, IB = 0, V

clamp

= Rated V

CEO

)

V

CEO(sus)

400

—

—

Vdc

Collector–Emitter Sustaining Voltage (Figure 1)

(IC = 200 mAdc, RBE = 27 Ohms, V

clamp

= Rated V

CER

)

V

CER(sus)

425

—

—

Vdc

Collector Cutoff Current (Rated V

CER

, RBE = 27 Ohms)

I

CER

—

—

1.0

mAdc

Collector Cutoff Current (Rated V

CBO

, IE = 0)

I

CBO

—

—

1.0

mAdc

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

I

EBO

—

—

40

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 3.0 Adc, VCE = 6 0 Vdc)
(IC = 6.0 Adc, VCE = 6.0 Vdc)
(IC = 10 Adc, VCE = 6.0 Vdc)

h

FE

300
100

20

550
350
150

—

2000

—

—

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 0.6 Adc)
(IC = 6.0 Adc, IB = 0.6 Adc)
(IC = 10 Adc, IB = 2.0 Adc)

V

CE(sat)

—
—
—

—
—
—

1 5

2.0

2.5

Vdc

Base Emitter Saturation Voltage

(IC = 6.0 Adc, IB = 0.6 Adc)
(IC = 10 Adc, IB = 2.0 Adc)

V

BE(sat)

—
—

—
—

2.5

3.0

Vdc

Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc)

V

BE(on)

—

—

2.8

Vdc

Diode Forward Voltage (IF = 10 Adc)

V

f

—

2.0

3.5

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 10 Vdc, IE = 0, f

test

= 100 kHz)

C

ob

—

165

350

pF

SWITCHING CHARACTERISTICS

Storage Time

CC

= 12 Vdc, IC = 6.0 Adc,

t

s

—

7 5

15

µs

Fall Time

(VCC = 12 Vdc, IC = 6.0 Adc,
IB1 = IB2 = 0.3 Adc) Figure 2

t

f

—

5.2

15

µs

FUNCTIONAL TESTS

Second Breakdown Collector Current with

Base–Forward Biased

I

S/B

See Figure 10

—

Pulsed Energy Test (See Figure 12)

IC2L/2

—

—

180

mJ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

VCC [ 14 V
ADJUST UNTIL IC = 6 A

V

CEO(sus)

= 400 Vdc

V

CER(sus)

= 425 Vdc

VCC = 20 Vdc

Figure 1. Sustaining Voltage

Test Circuit

Figure 2. Switching Times

Test Circuit

*Adjust t1 such that IC reaches 200 mA at VCE = V

clamp

0 V

*

t

1

5 ms

220

100

1N4933

2N3713

L = 10 mH

V

CER

27

V

clamp

2

Ω

E

o

T.U.T.

– 4 V

[

12 V

En

51

1N3947

225 µs

[

12 V

0

(V

10 V

V

CEO

V

clamp

25

µ

s

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Motorola Bipolar Power Transistor Device Data

TS)

Figure 3. DC Current Gain Figure 4. Collector Saturation Region

3

0.002
IB, BASE CURRENT (AMP)

0.5

0.005 0.01 0.02 0.05 1 2

2.5

2

1.5

1

TJ = 25°C

10

4

VBE, BASE-EMITTER VOLTAGE (VOLTS)

10

3

10

2

10

1

10

0

10

–1

IC = I

CES

25°C

REVERSE

FORWARD

Figure 5. Collector–Emitter Saturation Voltage

2.2

IC, COLLECTOR CURRENT (AMP)

0.2

0.1

1.8

1.4

1

0.6

Figure 6. Base–Emitter Voltage

2.8

IC, COLLECTOR CURRENT (AMP)

0.8

2.4

2

1.6

1.2

IC = 0.5 A

10 A

3

IC/IB = 5

– 30°C

25°C

150°C

25°C

TJ = – 30°C

V

BE(sat)

@ IC/IB = 5

V

BE(on)

@ VCE = 6 V

0.1 0.3 0.5 0.7 1 2 5 73 10

VCE = 250 V

TJ = 150°C

75°C

0 +0.2–0.2 +0.4 +0.8+0.6

6

0.20.1 0.5

TJ = 150°C

V

CE(sat)

, COLLECTOR–EMITTER SATURATION

VOLTAGE (VOLTS)

1 20.3 5 7 100.2 30.70.5 0.2

10

Figure 7. Turn–Off Switching Time

IC, COLLECTOR CURRENT (AMP)

7
5

3
2

1

0.5

0.1

0.5 0.7

TJ = 25°C
IC/IB = 20
VCE = 12 Vdc

0.3

t, TIME ( s)

µ

t

f

t

s

Figure 8. Collector Cutoff Region

0.2 0.3 1 2 5 73 10 20

0.2

0.7

2000

0.1
IC, COLLECTOR CURRENT (AMP)

20

0.2 0.3 0.5 0.7 1 2 3 5 10

700

100

50
30

h

FE

, DC CURRENT GAIN

TJ = 150°C

25°C

30°C

VCE = 3 Vdc
VCE = 6 Vdc

70

200

300

500

1000

7

25°C

, COLLECTOR–EMITTER VOLTAGE (VOL

CE

, BASE–EMITTER VOLTAGE (VOLTS) V

BE

V

µ

, COLLECTOR CURRENT ( A)

C

I

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Motorola Bipolar Power Transistor Device Data

Figure 9. Thermal Response

t, TIME (ms)

1

0.01

0.5

0.2

0.1

0.05

0.03

0.01

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

=

°

C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 2,000500

0.7

0.3

0.07

0.02

1,000

50

5

Figure 10. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

20
10

5
2

1

0.2

0.1

0.005
50 70 100 200 500

BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT

300

0.01

I

C

, COLLECTOR CURRENT (AMP)

MJH10012

TC = 25°C

MJ10012

dc

5.0 ms

1.0 ms

100 µs

10 20 30

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 10 is based on TC = 25_C, T

J(pk)

is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der­ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem­perature by using the appropriate curve on Figure 11.

T

J(pk)

may be calculated from the data in Figure 1 1. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im­posed by second breakdown.

t1 to be selected such that IC reaches 6 Adc before switch-off.
NOTE: “Usage Test,” Figure 12 specifies energy handling

capabilities in an automotive ignition circuit.

100

80

60

20

0

0 40 80 120 200

TC, CASE TEMPERATURE (

°

C)

POWER DERATING FACTOR (%)

THERMAL DERATING

SECOND BREAKDOWN
DERATING

160

MJH10012
MJ10012

20

1.5

10 mH

STANCORE

C2688

VZ = 400 V

T.U.T.

0.3

µ

F

10 Vdc

VCC = 12 Vdc

0 Vdc

t

1

5 ms

220

1N4933

2N5881

27

Figure 11. Power Derating

Figure 12. Usage Test Circuit

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Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING
PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

CASE 340D–01

SOT 93, TO–218 TYPE

ISSUE A

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

A

D

V

G

K

S

L

U

B

Q

E

C

J

H

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 19.00 19.60 0.749 0.771
B 14.00 14.50 0.551 0.570
C 4.20 4.70 0.165 0.185
D 1.00 1.30 0.040 0.051

E 1.45 1.65 0.058 0.064
G 5.21 5.72 0.206 0.225
H 2.60 3.00 0.103 0.118

J 0.40 0.60 0.016 0.023
K 28.50 32.00 1.123 1.259

L 14.70 15.30 0.579 0.602
Q 4.00 4.25 0.158 0.167

S 17.50 18.10 0.689 0.712
U 3.40 3.80 0.134 0.149

V 1.50 2.00 0.060 0.078

1 2 3

4

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Motorola Bipolar Power Transistor Device Data

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MJ10012/D

*MJ10012/D*

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