Datasheet MJ10000 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

  

 
   


The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads
Switching Times With Inductive Loads —

210 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

350

Vdc

Collector–Emitter Voltage

V

CEX

400

Vdc

Collector–Emitter Voltage

V

CEV

450

Vdc

Emitter Base Voltage

V

EB

8

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

20
30

Adc

Base Current — Continuous

— Peak (1)

I

B

I

BM

2.5
5

Adc

Total Power Dissipation @ TC = 25_C

@ TC =100_C

Derate above 25_C

P

D

175
100

1

Watts

W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +200

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1

_

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

275

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ10000/D

 Motorola, Inc. 1995

20 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

350 VOLTS

175 WATTS



CASE 1–07

TO–204AA

(TO–3)

≈

100≈ 15

REV 4

MJ10000

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS (2)

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 250 mA, IB = 0, V

clamp

= Rated V

CEO

) MJ10000

V

CEO(sus)

350

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage (Table 1, Figure 12)

IC = 2 A, V

clamp

= Rated V

CEX

, TC = 100_C MJ10000

IC = 10 A, V

clamp

= Rated V

CEX

, TC = 100_C MJ10000

V

CEX(sus)

400
275

—
—

—
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc)

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 150_C)

I

CEV

—
—

—
—

0.25
5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Collector Cutoff Current

(VCE = Rated V

CEV

, RBE = 50 Ω, TC = 100_C)

I

CER

—

—

5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 8 Vdc, IC = 0)

I

EBO

—

—

150

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

I

S/b

See Figure 11

ÎÎÎ

ÎÎÎ

ÎÎÎ

Adc

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 5 Adc, VCE = 5 Vdc)
(IC = 10 Adc, VCE = 5 Vdc)

h

FE

50
40

—
—

600
400

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 400 mAdc)
(IC = 20 Adc, IB = 1 Adc)
(IC = 10 Adc, IB = 400 mAdc, TC = 100_C)

V

CE(sat)

—
—
—

—
—
—

1.9
3
2

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 400 mAdc, TC = 100_C)

V

BE(sat)

—
—

—
—

2.5

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Diode Forward Voltage (1)

(IF = 10 Adc)

V

f

—

3

5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain

(IC = 1.0 Adc, VCE = 10 Vdc, f

test

= 1 MHz)

h

fe

10

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 100 kHz)

C

ob

100

325

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)
Delay Time (VCC = 250 Vdc, IC = 10 A,

Rise Time IB1 = 400 mA, V

BE(off)

= 5 Vdc, tp = 50 µs,
Storage Time Duty Cycle v 2%)
Fall Time

t

d

t

r

t

s

t

f

—
—
—
—

0.12

0.20

1.5

1.1

0.2

0.6

3.5

2.4

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs
µs
µs
µs

Inductive Load, Clamped (Table 1)
Storage Time (IC = 10 A(pk), V

clamp

= Rated V

CEX

, IB1 = 400 mA,

Crossover Time V

BE(off)

= 5 Vdc, TC = 100_C)

t

sv

t

c

—
—

3.5

1.5

5.5

3.7

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs
µs

Storage Time (IC = 10 A(pk), V

clamp

= Rated V

CEX

, IB1 = 400 mA,

Crossover Time V

BE(off)

= 5 Vdc, TC = 25_C)

t

sv

t

c

—
—

1.0

0.7

—
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs
µs

(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.

(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode Is comparable to that of typical fast recovery rectifiers.

(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.

MJ10000

3

Motorola Bipolar Power Transistor Device Data

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5

0.2 0.3 1 2 3

100

50

Figure 2. Collector Saturation Region

V, VOLTAGE (VOLTS)

3

IB, BASE CURRENT (ANP)

1

0.02 0.03 0.1 0.2 0.5 1 2

2.6

2.2

1.8

1.4

IC = 5 A

TJ = 25°C

10 A

VBE, BASE-EMITTER VOLTAGE (VOLTS)

10

4

10

3

10

2

10

1

500

70

h

FE

, DC CURRENT GAIN

TJ = 150°C

VCE = 5 V

, COLLECTOR CURRENT ( A)I

C

10

0

0 +0.2–0.2

VCE = 250 V

TJ = 125°C

100°C

25°C

30
20

10

7

0.5 0.7 5 7 20

Figure 3. Collector Emitter Saturation Voltages

2.4

0.2
IC, COLLECTOR CURRENT (AMPS)

0.4

0.3 0.5 0.7 1 2 5 20

2

1.6

1.2

0.8

IC/IB = 25

TJ = – 55°C

73

Figure 4. Base-Emitter Voltage

2.8

IC, COLLECTOR CURRENT (AMP)

0.8

0.2 0.3 0.5 0.7

2.4

2

1.6

1.2

Figure 5. Collector Cutoff Region

0.4

Figure 6. Output Capacitance

VR, REVERSE VOLTAGE (VOLTS)

50

1 2 20 60100.6

200

70

TJ = 25°C

C

ob

1000

500

100

100 200 400

25°C

–55°C

200

300

10

15 A 20 A

0.05 0.70.30.07

V, VOLTAGE (VOLTS)

10

25°C

150°C

2 5 2073 101

25°C

150°C

25°C

TJ = 55°C

V

BE(sat)

@ IC/IB = 25

V

BE(on)

@ VCE = 3 V

75°C

µ

10

–1

+0.4 +0.8+0.6

4 6 40

700

300

C

ob

, OUTPUT CAPACITANCE (pF)

DC CHARACTERISTICS

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

V

MJ10000

4

Motorola Bipolar Power Transistor Device Data

I

C(pk)

t

t

1

t

f

t

I

C

V

CE

TEST CIRCUITS

CIRCUIT

VALUES

INPUT

CONDITIONS

V

CEO(sus)

V

CEX(sus)

AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

L

coil

= 10 mH, VCC = 10 V

R

coil

= 0.7 Ω

V

clamp

= V

CEO(sus)

L

coil

= 180 µH

R

coil

= 0.05 Ω

VCC = 20 V

V

clamp

= Rated V

CEX

Value

VCC = 250 V
RL = 25 Ω
Pulse Width = 50 µs

t

2

TIME

tf CLAMPED

VCE or
V

clamp

tf UNCLAMPED

[

t

2

20

1

0

PW Varied to Attain
IC = 250 mA

2

INDUCTIVE TEST CIRCUIT

INDUCTIVE TEST CIRCUIT

t1 Adjusted to
Obtain I

C

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

1

INPUT

2

R

coil

L

coil

V

CC

V

clamp

RS =

0.1

Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR
DETAILED CONDITIONS

1
2

TUT

R

L

V

CC

t1 ≈

L

coil (IC

pk

)

V

CC

t2 ≈

L

coil (IC

pk

)

V

Clamp

1

INPUT

2

R

coil

L

coil

V

CC

V

clamp

RS =

0.1

Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR
DETAILED CONDITIONS

Table 1. Test Conditions for Dynamic Performance

Figure 7. Inductive Switching Measurements

TIME

t

sv

t

rv

t

fi

t

ti

90% V

clamp

t

c

90% I

B1

I

B

10%

I

C

2%

I

C

V

clamp

I

C

V

clamp

10%
V

clamp

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times
have been defined and a pply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% V

clamp

trv = Voltage Rise Time, 10–90% V

clamp

tfi = Current Fall Time, 90–10% I

C

tti = Current Tail, 10–2% I

C

tc = Crossover Time, 10% V

clamp

to 10% I

C

An enlarged portion of the turn–off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.

MJ10000

5

Motorola Bipolar Power Transistor Device Data

SWITCHING TIMES NOTE (continued)

For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us­ing the standard equation from AN–222:

P

SWT

= 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents this
relationship may not be valid.

As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency con­verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.

3

Figure 8. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

µ

2

0.7

0.1
3 20

0.2

1 5

t

d

t

r

2 7

1

0.3

0.5

2

Figure 9. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

µ

0.7

0.2

0.1

V

BF(off)

= 5 V
VCC = 250 V
IC/IB = 25
TJ = 25

°

C

t

f

t

s

0.3

0.5

V

BE(off)

= 5 V
VCC = 250 V
IC/IB = 25
TJ = 25

°

C

10 3 201 52 7 10

1

RESISTIVE SWITCHING PERFORMANCE

Figure 10. Thermal Response

t, TIME (ms)

1.0

0.01

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

Z

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 1.0

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

Z

θ

JC(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

MJ10000

6

Motorola Bipolar Power Transistor Device Data

The Safe Operating Area figures shown in Figures 11 and 12 are
specified for these devices under the test conditions shown.

50

4.0

Figure 11. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

3.0

1.0

0.5

0.1

0.02

7.0 10 20 30 70
400

BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN LIMITED

50

0.005

I

C

, COLLECTOR CURRENT (AMPS)

TC = 25°C

dc

0.2

100 200

350

100 µs

10 µs

20

0

Figure 12. Reverse Bias Switching

Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

16

12

0

500

4

I

C

, COLLECTOR CURRENT (AMP)

8

300 400100 200

V

BE(off)

= 5 V

TURN OFF LOAD LINE
BOUNDARY FOR MJ10001.
THE LOCUS FOR MJ10000
IS 50 V LESS

1 ms

5 ms

CURVES APPLY BELOW RATED V

CEO

MJ10000
MJ10001

V

BE(off)

= 2 V

V

BE(off)

= 0 V

TJ v 100°C

0.01

0.05

20

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 11 is based on TC = 25_C; T

J(pk)

is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second b reakdown limitations do not
derate the same as thermal limitations. Allowable current at
the voltages shown on Figure 11 may be found at any case
temperature by using the appropriate curve on Figure 13.

T

J(pk)

may be calculated from the data in Figure 10. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im­posed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to e mitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as V

CEX(sus)

at a given collector current
and represents a voltage–current condition that can be sus­tained during reverse biased turn–off. This rating is verified
under clamped conditions so that the device is never sub­jected to an avalanche mode. Figure 12 gives the complete
reverse bias safe operating area characteristics.

100

80

60

20

0

0 40 80 120 200

Figure 13. Power Derating

TC, CASE TEMPERATURE (°C)

POWER DERATING FACTOR (%)

THERMAL DERATING

SECOND BREAKDOWN
DERATING

160

MJ10000

7

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09

E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19

L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC

V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING
PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

MJ10000

8

Motorola Bipolar Power Transistor Device Data

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MJ10000/D

*MJ10000/D*

◊