Page 1
SLOTTED
PHOTOINTERRUPTER
MIT-5A11J
(.276)
1
243
Description Package Dimensions
The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a trans missive subminiature photointerrupter.
Features
l Non -contact switching
l For- direct pc board
l Dual - in - line socket mounting
l Fast switching speed
l Choice of mounting configuration.
6.00
(.236)
2.54
(.100)
11.00
(.433)
7.00
2.00
(.079)
OPTICAL LINE
0.50
(.020)
1.58
(.062)
0.50
(.020)
4.00
(.157)
13.00
(.512)
9.50
(.370)
5.00
(.197)
Unit : mm (inches)
6.00
(.236)
1.50
(.059)
2.85
(.112)
Absolute Maximum Ratings
Parameter Symbol Maximum Rating Unit
Continuous Forward Current
INPUT Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
7.27
(.286)
φ1.50
(.059)
1.38
(.054)
NOTE
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
@TA =25oC
V
P
V
(BR)CEO
V
(BR)ECO
P
T
T
I
P
TOT
F
R
ad
C
opr
stg
50 mA
5 V
75 mW
30 V
5 V
75 mW
100 mW
o
C to + 85oC
o
C to + 100oC
Unity Opto Technology Co., Ltd.
04/01/2002
Page 2
Optical-Electrical Characteristics
PD , P
C
Ta=25
℃
10mA
4mA
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Parameter symbol Min. Typ. Max. Unit. Test Conditions
Input Forward Voltage
Reverse Current
V
F
I
R
1.2 1.4 V
10
µA
IF =20mA
VR =5V
Output Collector Dark Current Iceo 100 nA Vce =10V
Collector Emitter Saturation Voltage
Collector Current Ic (on) 1 10 mA
Transfer Cha- Response Time (RISE)
racteristics Response Time (FALL)
V
CE(SAT)
0.4 V
Ic=0.1mA,Ee=0.1mW/cm
IF =20mA, Vce =5V
t
r
t
f
20 100
20 100
µS Ic=100µA, Vce =5V
RL =1k, d =1mm
µS
Typical Optical-Electrical Characteristic Curves
MIT-5A11J
@TA =25oC
2
60
(mA)
50
F
40
30
20
10
0
-25 0 25 50 75 100
Ambient Temperature T
Fig.1 forward Current VS
Ambient Temperature
100
(mA) Forward Current I
80
F
60
40
20
0
Forward Current I
0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage VF (V)
Fig.3 Forward Current VS
Forward Voltage
120
100
80
60
40
20
Power Dissipation (mW)
A
.
P
TOT
0
-25 0 25 50 75 100
Ambient Temperature TA (oC )
Fig.2 Power Dissipation vs
Ambient Temperature
2.8
Vce=2V
2.4
2.0
1.6
1.2
0.8
0.4
0.0
Collector Current Ic (mA)
0 5 10 15 20 25 30
o
Forward Current IF (mA)
Fig.4 Collector Current vs
Forward Current
A)
µ
Collector Current Ic (
Unity Opto Technology Co., Ltd.
20mA
IF=15mA
0 2 4 6 8 10 12
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
120
100
80
60
40
20
0
-25 0 25 50 75 100
Relative Collector Current (%)
Ambient Temperature TA (oC )
Fig.6 Relative Collector Current VS. T
A
04/01/2002
Page 3
Typical Optical-Electrical Characteristic Curves
Ta=25oC
tr
0
+
MIT-5A11J
10000
CEO
Collector Dark Current I
VCE=20V
1000
100
10
1
0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.7 Collector Dark Current vs.
Ambient Temperature
100
80
60
40
20
Relative Sensitivity (%)
0
700 800 900 1000 1100 1200
Fig.9 Spectral Sensitivity (Detecting side)
Wavelength (nm)
Ta=25oC
1000
100
10
VCE=2V
IC=100mA
1
s)
µ
Response Time (
0.1
0.01 0.1 1 10 100
Load Resistance Rt (KΩ)
Fig.8 Response Time vs.
Load Resistance
Response Time Measurement Circuit
Input
90 %
Output
Input V
10 %
t
t
tf
IL
VR
CC
Output
Sensing Position Characteristics
(Typical)
IF=20mA
(%)
L
100
50
VCE=5V
o
Relative light current I
0
-2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm)
Distance d (mm)
Unity Opto Technology Co., Ltd.
YX
IF=20mA
VCE=5V
Ta=25oC
(Center of optical axis)
X
Y
04/01/2002
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