Page 1
SLOTTED
PHOTOINTERRUPTER
MIT-5A117
Description Package Dimensions
5.0±0.2
2(.079)
6.8(.268)
10.0(.394)
10 MIN
3.2±0.2
(.197)
(.126)
(.394)
(.394)
0.7±0.2
0.5±0.1
(.028)
7.7
6.2
(.303
1
(.039
2.54 NOM
(.100)
0.5AA
(.020)
The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter.
Features
l Non -contact switching
l For- direct pc board or
l Dual - in - line socket mounting
l Fast switching speed
l Choice of mounting configuration.
(.244)
Unit: mm ( inches )
1
2
2
13.0
0.8
(.031)
(.512)
1.0(.040) MIN
4
3
(.020)
Absolute Maximum Ratings
Parameter Symbol Maximum Rating Unit
Continuous Forward Current
INPUT Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
NOTE
1. Tolerance is ± 0.25 mm (.006") unless otherwise noted.
@TA =25oC
V
P
V
(BR)CEO
V
(BR)ECO
P
T
T
I
P
TOT
opr
F
R
ad
C
stg
50 mA
5 V
75 mW
30 V
5 V
75 mW
100 mW
-25oC to + 85oC
-40oC to + 100oC
Unity Opto Technology Co., Ltd.
04/01/2002
Page 2
MIT-5A117
Optical-Electrical Characteristics
Ta=25
4mA
Parameter symbol Min. Typ. Max. Unit. Test Conditions
Input Forward Voltage
Reverse Current
V
F
I
R
- 1.2 1.4 V
- - 10
µA
Output Collector Dark Current Iceo - - 100 nA Vce =10V
Collector Current Ic (on) 500 - Transfer Cha- Response Time (RISE)
racteristics Response Time (FALL)
t
r
t
f
- 20 100
- 20 100
µA
µS Ic=100µA, Vce =5V
µS
Typical Optical-Electrical Characteristic Curves
@TA =25oC
IF =20mA
VR =5V
IF =20mA, Vce =5V
RL =1k, d =1mm
60
(mA)
50
F
40
30
20
10
0
Forward Current I
-25 0 25 50 75 100
Ambient Temperature T
Fig.1 forward Current VS
Ambient Temperature
1000
(mA)
F
100
10
1
Forward Current I
0 1 2 3 4
Forward Voltage VF (V)
Fig.3 Forward Current VS
Forward Voltage
120
100
Power Dissipation (mW)
A
.
P
80
60
40
20
TOT
PD , P
C
0
-25 0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.2 Power Dissipation vs
Ambient Temperature
700
A)
µ
Collector Current Ic (
Vce=2V
600
500
400
300
200
100
0
0 5 10 15 20 25 30
℃
Forward Current IF (mA)
Fig.4 Collector Current vs
Forward Current
700
A)
µ
Collector Current Ic (
Ta=25℃
600
500
400
300
200
100
0
0 2 4 6 8 10 12
20mA
IF=15mA
10mA
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
Unity Opto Technology Co., Ltd.
120
100
80
60
40
20
0
Relative Collector Current (%)
-25 0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.6 Relative Collector Current VS. T
A
04/01/2002
Page 3
MIT-5A117
Typical Optical-Electrical Characteristic Curves
CEO
Ta=25
℃
Ta=25
℃
Distance d (mm)
0+0
+
tr
-6
10
VCE=20V
-7
10
-8
10
-9
10
-10
10
Collector Dark Current I
0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.7 Collector Dark Current vs.
Ambient Temperature
100
80
60
40
20
Relative Sensitivity (%)
0
700 800 900 1000 1100 1200
Ta=25℃
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
1000
100
VCE=2V
IC=100mA
Ta=25℃
s)
µ
10
1
Response Time (
0.1
0.01 0.1 1 10 100
Load Resistance Rt (KΩ)
Fig.8 Response Time vs.
Load Resistance
Response Time Measurement Circuit
Input
90 %
Output
Input V
10 %
t
t
tf
IL
CC
VR
Output
Sensing Position Characteristics
(Typical)
IF=20mA
(%)
L
100
VCE=5V
50
Relative light current I
0
-2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm)
Unity Opto Technology Co., Ltd.
YX
IF=20mA
VCE=5V
(Center of optical axis)
X
Y
04/01/2002
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