Page 1
SLOTTED
PHOTOINTERRUPTER
MIT-5A116
Unit: mm ( inches )
10 MIN
(.197)
(.394)
(.406)
3.7 ± 0.2
A-A SECTION
2-
± 0.1
(.205)
(.146)
(.020)
0.5
A
(.020)
(.100)
Description Package Dimensions
The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive
subminiature photointerrupter.
Features
l Non -contact switching
l For- direct pc board or
l Dual - in - line socket mounting
l Fast switching speed
l Choice of mounting configuration.
1
2
0.5 ± 0.10
2.35 ± 0.1
(.093)
14.0 (.551)
5.0 ± 0.2
φ 0.7
(.028)
6.6 ± 0.1
(.260)
0.7 (.028)
1.0 (.040) MIN
5.2 ± 0.1
2.5 (.098)
7.5 ± 0.3 (.295)
4
3
0.8 (.031)
7.0 (.276)
10.0 (.394)
Absolute Maximum Ratings
Continuous Forward Current
INPUT Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
6.0
(.236)
NOTE
1. Tolerance is ± 0.25 mm (.006") unless otherwise noted.
@TA =25 oC
Parameter Symbol Maximum Rating Unit
V
P
V
(BR)CEO
V
(BR)ECO
P
T
T
I
P
TOT
opr
F
R
ad
C
stg
50 mA
5 V
75 mW
30 V
5 V
75 mW
100
mW
-25oC to + 85oC
-40oC to +100oC
Unity Opto Technology Co., Ltd.
04/01/2002
Page 2
MIT-5A116
Optical-Electrical Characteristics
Transfer Cha-
PD , P
C
4mA
Parameter Symbol Min. Typ. Max. Unit. Test Conditions
Input Forward Voltage
Reverse Current
V
F
I
R
- 1.2 1.4 V
- - 10
µA
Output Collector Dark Current Iceo - - 100 nA Vce =10V
Collector Emitter
V
CE(SAT)
- - 0.4 V
Collector Current Ic (on) 0.5 - 10 mA
Response Time (RISE)
racteristics Response Time (FALL)
t
r
t
f
- 20 100
- 20 100
µS Ic=100µA, Vce =5V
µS
Typical Optical-Electrical Characteristic Curves
@TA =25 oC
IF =20mA
VR =5V
Ic=0.1mA,Ee=0.1mW/cm
IF =20mA, Vce =5V
RL =1k, d =1mm
2
60
50
(mA)
F
40
30
20
10
Forward Current I
0
-25 0 25 50 75 100
Ambient Temperature T
Fig.1 forward Current VS
Ambient Temperature
100
(mA)
80
F
60
40
20
Forward Current I
0
0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage VF (V)
Fig.3 Forward Current VS
Forward Voltage
700
A)
µ
Collector Current Ic (
Ta=25℃
600
500
400
300
200
100
0
0 2 4 6 8 10 12
20mA
IF=15mA
10mA
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
120
100
80
60
40
20
Power Dissipation (mW)
A
.
P
TOT
0
-25 0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.2 Power Dissipation vs
Ambient Temperature
700
A)
µ
Collector Current Ic (
Vce=2V
600
Ta=25℃
500
400
300
200
100
0
0 5 10 15 20 25 30
Forward Current IF (mA)
Fig.4 Collector Current vs
Forward Voltage
120
100
80
60
40
20
0
Relative Collector Current (%)
-25 0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.6 Relative Collector Current VS. T
A
Unity Opto Technology Co., Ltd.
04/01/2002
Page 3
MIT-5A116
Typical Optical-Electrical Characteristic Curves
Ambient Temperature
Response Time (
µ
s)
tr
Relative light current I
(%)
0+0
+
Ta=25
℃
-6
10
CEO
Collector Dark Current I
10
10
10
10
VCE=20V
-7
-8
-9
-10
0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.7 Collector Dark Current vs.
100
80
60
40
20
Relative Sensitivity (%)
0
700 800 900 1000 1100 1200
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Ta=25℃
1000
VCE=2V
IC=100mA
100
10
1
0.1
0.01 0.1 1 10 100
Load Resistance Rt (KΩ)
Fig.8 Response Time vs.
Load Resistance
Response Time Measurement Circuit
Input 0
90 %
Output 0
10 %
Input V
t
t
tf
IL
VR
Output
CC
Sensing Position Characteristics
(Typical)
100
L
50
0
-3 -2 -1 0 1 2 3 -3 -2 -1 0 1 2 3
Unity Opto Technology Co., Ltd.
IF=20mA
VCE=5V
Ta=25oC
Distance d (mm)
YX
IF=20mA
VCE=5V
Ta=25oC
(Center of optical axis)
X
Y
04/01/2002
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