Page 1
SUBMINIATURE
PHOTOINTERRUPTER
Description
Package Dimensions
F
R
ad
(BR)CEO
(BR)ECO
C
TOT
opr
stg
MIT-4A11B
1
2
3
4
CCE
4-0.15
*3.2
*2.54
1.5
1.2
4.2
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a
transmissive subminiature photointerrupter.
A
Features
l Ultra-compact `
l PWB mounting type package
l High sensing accuracy ( Slit width: 0.3mm )
l Gap between light emitter and detector: 1.2mm
Applications
l Cameras
l Floppy disk drives
l Printer
(0.3)
3.9
4-0.5
Unit : mm
4.2
(1.0)
2.8
5.2
1.5±0.1Hold ±
4.0
MIN.
NOTE
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Burr's dimension : 0.15MAX
3.( ) : Reference dimensions
4. The dimensions indicated by * refer to those measured
Absolute Maximum Ratings from the lead base
Parameter Symbol Maximum Rating Unit
Continuous Forward Current
INPUT Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Soldering temperature
Unity Opto Technology Co., Ltd.
@TA =25 ℃
I
V
P
V
V
P
P
T
T
T
sol
50 mA
5 V
75 mW
30 V
5 V
75 mW
100
-25℃ to + 85℃
-40℃ to + 100℃
260oC for 3 seconds
mW
01/30/2002
Page 2
MIT-4A11B
µ
µ
µ
P
, P
Ambient Temperature
Ta=25
℃
10mA
4mA
1.2
Optical-Electrical Characteristics
Parameter symbol Min. Typ. Max. Unit. Test Conditions
V
CE(SAT)
V
I
R
Input Forward Voltage
Reverse Current
Output
Collector Dark Current Iceo 100 nA Vce =10V
Collector Emitter Saturation Voltage
Collector Current Ic (on) 0.6 5.0 mA
Transfer Cha- Response Time (RISE)
racteristics Response Time (FALL)
t
t
Typical Optical-Electrical Characteristic Curves
60
(mA)
50
F
40
30
20
10
0
Forward Current I
-25 0 25 50 75 100
Ambient Temperature T
Fig.1 forward Current VS
100
(mA)
80
F
60
40
20
0
Forward Current I
0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage VF (V)
Fig.3 Forward Current VS
Forward Voltage
A
.
@TA =25℃
A
IF =20mA
VR =3V
2
F
1.2 1.4 V
10
0.4 V Ic=0.1mA,Ee=0.1mW/cm
IF =20mA, Vce =5V
r
f
50 150
50 150
120
100
80
60
40
20
0
-25 0 25 50 75 100
Power Dissipation (mW)
Ambient Temperature TA ( oC )
2.8
Vce=2V
2.4
Ta=25℃
2.0
1.6
1.2
0.8
0.4
0
Collector Current Ic (mA)
0 5 10 15 20 25 30
Fig.4 Collector Current vs
Ic=100µA, Vce =5V
S
RL=1KΩ
S
P
TOT
Fig.2 Power Dissipation vs
Ambient Temperature
Forward Current IF (mA)
Forward Current
Unity Opto Technology Co., Ltd.
A)
2.8
m
2.4
2.0
1.6
0.8
0.4
0
Collector Current Ic (
0 2 4 6 8 10 12
20mA
IF=15mA
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
120
100
80
60
40
20
0
Relative Collector Current (%)
-25 0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.6 Relative Collector Current VS. T
A
01/30/2002
Page 3
Typical Optical-Electrical Characteristic Curves
CEO
tr
Ta=25
℃
0
+
MIT-4A11B
10000
Collector Dark Current I
VCE=20V
1000
100
10
1
0 25 50 75 100
Ambient Temperature TA ( ℃ )
Fig.7 Collector Dark Current vs.
Ambient Temperature
100
80
60
40
20
Relative Sensitivity (%)
0
700 800 900 1000 1100 1200
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Ta=25℃
1000
VCE=2V
s)
IC=100µA
µ
100
Ta=25℃
10
1
Response Time (
0.1
0.01 0.1 1 10 100
Load Resistance Rt (KΩ)
Fig.8 Response Time vs.
Load Resistance
Response Time Measurement Circuit
Input
90 %
Output
Input V
10 %
t
t
tf
IL
VR
CC
Output
Sensing Position Characteristics
(Typical)
IF=20mA
(%)
L
100
50
VCE=5V
Ta=25℃
Relative light current I
0
-2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm)
Unity Opto Technology Co., Ltd.
YX
Distance d (mm)
IF=20mA
VCE=5V
(Center of optical axis)
X
Y
01/30/2002
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