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SUBMINIATURE
PHOTOINTERRUPTER
Absolute Maximum Ratings
MIT-4A11A
1
2
4
CCE
4-0.15
*4.0
*2.54
1.5
Description Package Dimensions Unit : mm
The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a
transmissive subminiature photointerrupter.
A
3
5.0
2.0
Features
l Ultra-compact
l PWB mounting type package
l High sensing accuracy ( Slit width: 0.3mm )
l Gap between light emitter and detector: 2mm
(0.3)
3.9
4.2
(1.0
2.8
1.5±0.1Hold ±
4-0.5
Applications
l Cameras
l Floppy disk drives NOTE
l Printer 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Burr's dimension : 0.15MAX
3.( ) : Reference dimensions
4. The dimensions indicated by * refer to those measured
from the lead base
5.2
4.0
MIN.
Continuous Forward Current
INPUT Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Soldering temperature
Unity Opto Technology Co., Ltd.
@TA =25oC
Parameter Symbol Maximum Rating Unit
V
P
V
(BR)CEO
V
(BR)ECO
P
T
T
T
I
P
TOT
F
R
ad
C
opr
stg
sol
50 mA
5 V
75 mW
30 V
5 V
75 mW
100
-25oC to + 85oC
-40oC to + 100oC
260oC for 3 seconds
mW
04/01/2002
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MIT-4A11A
Transfer Cha-
TOTPD
C
10mA
4mA
Optical-Electrical Characteristics @T
Parameter Min. Typ. Max. Unit. Test Conditions
Input Forward Voltage - 1.2 1.4 V
Reverse Current - - 10
Output
Collector Dark Current - - 100 nA Vce =10V
Collector Emitter Saturation Voltage
Collector Current Ic mA
racteristics D 7.0 - 10.0
Response Time (RISE)
Response Time (FALL)
symbol
V
F
I
R
Iceo
V
CE(SAT)
- - 0.4 V
A 0.5 - 4.0
B 3.0 - 6.0
C 5.0 - 8.0
t
- 50 150
r
t
- 50 150
f
IF =20mA
VR =3V
µA
Ic=0.1mA,Ee=0.1mW/cm
IF =20mA, Vce =5V
µS
Ic=100µA, Vce =5V
RL=1KΩ
µS
Typical Optical-Electrical Characteristic Curves
60
(mA)
50
F
40
30
20
10
0
Forward Current I
-25 0 25 50 75 100
Ambient Temperature T
Fig.1 forward Current VS
Ambient Temperature
100
(mA)
80
F
60
40
20
0
Forward Current I
0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage VF (V)
Fig.3 Forward Current VS
Forward Voltage
A)
2.8
m
Collector Current Ic (
Ta=25℃
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 2 4 6 8 10 12
20mA
IF=15mA
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
A
.
120
100
80
60
40
20
Power Dissipation (mW)
P
, P
0
-25 0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.2 Power Dissipation vs
Ambient Temperature
2.8
Vce=2V
2.4
Ta=25℃
2.0
1.6
1.2
0.8
0.4
0.0
Collector Current Ic (mA)
0 5 10 15 20 25 30
Forward Current IF (mA)
Fig.4 Collector Current vs
Forward Current
120
100
80
60
40
20
0
-25 0 25 50 75 100
Relative Collector Current (%)
Ambient Temperature TA ( oC )
Fig.6 Relative Collector Current VS. T
=25oC
A
A
2
Unity Opto Technology Co., Ltd.
04/01/2002
Page 3
Typical Optical-Electrical Characteristic Curves
CEO
tr
Ta=25
℃
0
+
MIT-4A11A
10000
1000
Collector Dark Current I
VCE=20V
100
10
1
0 25 50 75 100
Ambient Temperature TA ( ℃ )
Fig.7 Collector Dark Current vs.
Ambient Temperature
100
80
60
40
20
Relative Sensitivity (%)
0
700 800 900 1000 1100 1200
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Ta=25℃
1000
VCE=2V
s)
IC=100µ A
µ
100
Ta=25℃
10
1
Response Time (
0.1
0.01 0.1 1 10 100
Load Resistance Rt (KΩ)
Fig.8 Response Time vs.
Load Resistance
Response Time Measurement Circuit
Input
90 %
Output
Input V
10 %
t
t
tf
IL
VR
CC
Output
Sensing Position Characteristics
(Typical)
IF=20mA
(%)
L
100
50
VCE=5V
Ta=25℃
Relative light current I
0
-2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm)
Unity Opto Technology Co., Ltd.
YX
Distance d (mm)
IF=20mA
VCE=5V
(Center of optical axis)
X
Y
04/01/2002
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