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T-1 PACKAGE
NPN PHOTOTRANSISTOR
MID-32H22
Description Package Dimensions
C
E
The MID-32H22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package. The lensing effect of the package allows an acceptance half view
φ 3.55±0.25
(.140±.010)
φ 3.10±0.20
(.122±.008)
Unit : mm (inches )
angle of 20° that is measured from the optical axis to
the half power point .
Features
l Wide range of collector current
l Lensed for high sensitivity
l Low cost plastic package
l Good spectral matching IRED (λp 880/850 nm) type
l Acceptance view angle : 40
o
4.28±0.20
(.169±.008)
5.28±0.30
(.208±.012)
23.40MIN
(.920)
0.50 TYP.
(.020)
2.54
(.100)
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 1.5 mm (.059") max
3. Lead spacing is measured where the leads emerge from the package.
1.00MIN
(.040)
3.85
(.152)
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 100 mW
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Unity Opto Technology Co., Ltd.
o
C to +100oC
o
C to +100oC
o
C for 5 seconds
@ TA=25oC
02/04/2002
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MID-32H22
Optical-Electrical Characteristics
2
Ω
2
VS LOAD RESISTANCE
Vce = 5 V
VS IRRADIANCE
VS AMBIENT TEMPERATURE
VS. WAVELENGTH
0.5 0.3 0.1 0.2 0.4 0.6
70°
50°
80
Parameter Symbol Min. Typ. Max. Unit
Collector-Emitter
Ic=0.1mA
Breakdown Voltage Ee=0
Emitter-Collector Ie=0.1mA
Breakdown Voltage Ee=0
Collector-Emitter
Ic=0.5mA
Saturation Voltage Ee=0.1mW/cm
Rise Time
Fall Time
Collector Dark
V
IC=1mA
VCE=10V
Current Ee=0
On State Collector
VCE=5V
Current Ee=0.1mW/cm
Test Conditions
=5V, RL=1K
CC
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
30 V
5
Tr 15
Tf 15
I
CEO
I
C(ON)
0.4
0.4
100
@ TA=25oC
V
V
µS
nA
mΑ
Typical Optical-Electrical Characteristic Curves
A
µ
1000
100
10
1
0.1
0.01
0.001
0 40 80 120
TA - Ambient Temperature -oC
Iceo-Collector Dark Current -
FIG.1 COLLECTOR DARK CURRENT
S
VS AMBIENT TEMPERATURE
µ
200
Vcc = 5 V
VRL= 1 V
160
F = 100 Hz
120
PW = 1 ms
80
40
0
Tr Tf Rise and Fall Time -
0 2 4 6 8 10
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
600 700 800 900 1000
Relative Spectral Sensitivity
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
4.0
Vce = 5 V
3.5
Ee = 0.1 mW/cm
3.0
@λ= 940 nm
2.5
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125
Normalized Collector Current
C
TA - Ambient Temperature -oC
I
2
FIG.2 NORMALIZED COLLECTOR CURRENT
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Relative Collector Current (mA)
FIG.4 RELATIVE COLLECTOR CURRENT
Relative Sensitivity
Ee - Irradiance - mW/cm
0° 10° 20°
1.0
0.9
0.8
2
30°
40°
60°
90°
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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