Datasheet MCP1710 Datasheet

MCP1710

MCP1710

2 x 2 DFN*

GND

V

OUT

GND

V

IN

FB

1
2
3

4

8
7
6

5

GND

SHDNGND

* Includes Exposed Thermal Pad (EP); see Table 3-1.

EP

9

Ultra-Low Quiescent Current LDO Regulator

Features

• Ultra-Low 20 nA (typical) Quiescent Current

• Ultra-Low Shutdown Supply Current:

0.1 nA (typical)

• 200 mA Output Current Capability for
V

<3.5V

OUT

• 100 mA Output Current Capability for
V

>3.5V

OUT

• Input Operating Voltage Range: 2.7V to 5.5V

• Standard Output Voltages:

- 1.2V, 1.8V, 2.5V, 3.3V, 4.2V

• Low-Dropout Voltage: 450 mV Maximum at
200 mA

• Stable with 1.0 µF Ceramic Output Capacitor

• Overcurrent Protection

• Space Saving, 8-Lead Plastic 2 x 2 VDFN-8

Applications

• Energy harvesting

• Long-life battery powered applications

• Smart cards

• Ultra-Low consumption “Green” products

• Portable electronics

Description

The MCP1710 is a 200 mA for V

> 3.5V, low dropout (LDO) linear regulator that

V

OUT

provides high-current and low-output voltages, while
maintaining an ultra-low 20 nA of quiescent current
during device op erati on . In add iti on, the MC P1 710 can
be shut down for an even lower 0.1 nA (typical) supply
current draw. The MCP1710 comes in five standard
fixed output voltage versions: 1.2V, 1.8V, 2.5V, 3.3V
and 4.2V. The 200 mA output current capability,
combined with the low output-voltage capability, make
the MCP1710 a good c hoice for new ult ra-long-life LDO
applications that have high current demands, but
require ultra-low power consumption during sleep
states.

The MCP1710 is stable using ceramic output
capacitors that inherently provide lower output noise
and reduce the size and cost of the entire regulator
solution. Only 1 µF (2.2 µF recommended) of output
capacitance is needed to stabilize the LDO.

The MCP1710’s ultra-low quiescent and shutdown
current allows it to be paired with oth er ultra-low current
draw devices, such as Microchip’s nanoWatt XLP
technology devices, for a complete ultra-low power
solution.

< 3.5V , 100 mA for

OUT

Package Type

 2012 Microchip Technology Inc. DS25158B-page 1

MCP1710

V

IN

V

OUT

FB

GND

LOAD

C

IN

C

OUT

SHDN

+

-

V

IN

+

-

SHDN

Voltage
Reference

Overcurrent

GND

SHDN

FB

OUT

V

Typical Application

Functional Block Diagram

DS25158B-page 2  2012 Microchip Technology Inc.

MCP1710

1.0 ELECTRICAL

CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at tho se or any oth er conditions ab ove those

Absolute Maximum Ratings †

Input Voltage, VIN.............................................................6.0V

Maximum Voltage on Any Pin...............(GND – 0.3V) to 6.0V

Output Short Circuit Duration...................................Unlimited

Storage temperature....... .. .... .. .. .. .... ..... .. .... .. -65°C to +150°C

Maximum Junction Temperature, T
Operating Junction Tempe rature, T
ESD protection on all pins

  2kV HBM

...........................+150°C

J

...............-40°C to +85°C

J

indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.

AC/DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, VIN=VR+ 800 mV, V

Note 1, I

=1mA, CIN=C

OUT

temperatures, T

(Note 4) of -40°C to +85°C

J

= 2.2 µF (X7R Ceramic), TA=+25°C. Boldface type applies for junction

OUT

IN(min)=VR

Parameters Sym Min Typ Max Units Conditions

Input Operating Voltage V
Output V oltage Range V
Input Quiescent Current I

Input Quiescent Current

I

SHDN

IN

OUT

q

2.7 — 5.5 V

1.2 — 4.2 V

—20— nAVIN = VR+ 0.8V to 5.5V,

— 0.1 — nA SHDN =GND

for SHDN Mode
Maximum Continuous

I

OUT

200 ——mAVIN=VR+ 0.8V to 5.5V

Output Current

100 ——mAV

Current Limit I

OUT

—250— mAV

—175— mAV

Output V oltage Regulation V

Line Regulation V

(V

OUT

OUT

OUT

x VIN)

VR–4% — VR+4% VVR<1.8V (Note 2)

–2% — VR+4% V1.8V<VR<5.5V (Note 2)

V

R

/

-2 0.5 2 %/V (Note 1) V

-1 — 1 %/V (Note 1)  V

Load Regulation V

OUT/VOUT

-2 1 2 %VIN= to 5.5V,

-2 1 2 %3.5V<V

Note 1: The minimum V

must meet two conditions: VIN 2.7V and VIN VR V

IN

2: VR is the nominal regulator output voltage. VR= 1.2V, 2.5V, etc.
3: Dropout volt age is defined as the in put- to-ou tput voltage dif ferential at which the out put voltage drop s 3%

below its nominal value that was measured with an input voltage of VIN=V

4: The junction temperature is approximated by soaking the device under test at an ambient temperature

equal to the desired junction temperature. The test time is small enough such that the rise in the junction
temperature over the ambient temperature is not significant.

+ 0.3V, V

I

OUT

1.2V  V

IN=VR

3.5V  V

OUT

IN(max)

=0

 3.5V

R

+ 0.8V to 5.5V

 5.5V

R

=0.9xV

1.2V  VR 3.5V
=0.9xV

OUT

3.5V  VR 5.5V

< 1.8V, I

V

R

V

= 1.8V to 4.2V

R

I

OUT

1.2V < V

I

OUT

I

OUT

DROPOUT(MAX).

OUT(MAX)+VDROPOUT(MAX)

IN

OUT

IN

=50mA

<3.5V

R

= 1 mA to 200 mA,

<5.5V

R

= 1 mA to 100 mA,

=5.5V,

R

R

 5V

=50mA

 5V

.

 2012 Microchip Technology Inc. DS25158B-page 3

MCP1710

AC/DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, VIN=VR+ 800 mV, V

Note 1, I

=1mA, CIN=C

OUT

temperatures, T

Parameters Sym Min Typ Max Units Conditions

(Note 4) of -40°C to +85°C

J

= 2.2 µF (X7R Ceramic), TA=+25°C. Boldface type applies for junction

OUT

IN(min)=VR

+ 0.3V, V

IN(max)

=5.5V,

Dropout Voltage V

DROPOUT

——450 mV I

——400 mV I

= 200 mA

OUT

1.2V  V
= 100mA

out

3.5V  V

 3.5V, Note 3

R

 5.5V, Note 3

R

Shutdown Input

Logic High Input V
Logic Low Input V

SHDN-HIGH
SHDN-LOW

70 ——%VINVIN= 2.7V to 5.5V
——30 %VINVIN= 2.7V to 5.5V

AC Performance

Output Delay From SHDN

Output Noise e

Power Supply Ripple Rejec-

PSRR — 22 — dB f = 100 Hz, I

tion Ratio

Note 1: The minimum V

must meet two conditions: VIN 2.7V and VIN VR V

IN

T

OR

N

— 30 — ms SHDN = GND to VIN,

= GND to 95% VR

V

OUT

—0.37—µV/Hz I

=50mA, f=1kHz,

OUT

C

= 2.2 µF (X7R Ceramic)

OUT

=2.5V

V

OUT

OUT

=200mV pk-pk,

V

INAC

C

=0µF

IN

DROPOUT(MAX).

2: VR is the nominal regulator output voltage. VR= 1.2V, 2.5V, etc.
3: Dropout volt age is defined as the in put- to-ou tput voltage dif ferential at which the out put voltage drop s 3%

below its nominal value that was measured with an input voltage of VIN=V

OUT(MAX)+VDROPOUT(MAX)

4: The junction temperature is approximated by soaking the device under test at an ambient temperature

equal to the desired junction temperature. The test time is small enough such that the rise in the junction
temperature over the ambient temperature is not significant.

=10mA,

.

TEMPERATURE SPECIFICATIONS

Electrical Specifications: Unless otherwise noted, VIN=VR+800mV, V

Note 1, I

temperatures, TJ (Note 4) of -40°C to +85°C

Temperature Ranges

Operating Junction
Temperature Range

Maximum Juncti on
Temperature

Storage Temperature Range T

Thermal Package Resistances

Thermal Resistance,
2x2 VDFN-8

=1mA, CIN=C

OUT

= 2.2 µF (X7R Ceramic), TA=+25°C. Boldface type applies for junction

OUT

Parameters Sym Min Typ Max Units Conditions

T

T

A



JA



JC

-40 — +85 °C Steady State

J

J

——+150 °C Transient

-65 — +150 °C

— 73.1 — °C/W FR4 Board Only
—10.7—°C/W

IN(min)=VR

+ 0.3V, V

IN(max)

=5.5V,

1 oz. Copper JEDEC Standard Board
with Thermal Vias

DS25158B-page 4  2012 Microchip Technology Inc.

MCP1710

1.210

1.215

1.220

1.225

1.230

1.235

1.240

put Voltage (V)

TJ= +25°C

I

OUT

= 0.1 mA

TJ= -40°C

1.195

1.200

1.205

2.5 3.0 3.5 4.0 4.5 5.0 5.5

Ou

t

Input Voltage (V)

TJ= +85°C

2.500

2.502

2.504

2.506

2.508

2.510

put Voltage (V)

TJ= +25°C

I

OUT

= 0.1 mA

TJ= -40°C

2.494

2.496

2.498

2.5 3.0 3.5 4.0 4.5 5.0 5.5

Ou

t

Input Voltage (V)

TJ= +85°C

4.240

4.244

4.248

4.252

tput Voltage (V)

TJ= -40°C

TJ= +25°C

I

OUT

= 0.1 mA

4.232

4.236

4.50 4.75 5.00 5.25 5.50

O

u

Input Voltage (V)

T

J

= +

85°C

1.185

1.190

1.195

1.200

1.205

put Voltage (V)

TJ= +25°C

TJ= +85°C

VIN= 2.5V

1.170

1.175

1.180

0 50 100 150 200

Ou

t

Load Current (mA)

TJ= -40°C

2.4950

2.4975

2.5000

2.5025

tput Voltage (V)

TJ= +25°C

TJ= +85°C

VIN= 3.3V

TJ= -40°C

2.4900

2.4925

0 20406080100

O

u

Load Current (mA)

4.21

4.22

4.23

4.24

4.25

tput Voltage (V)

TJ= +25°C

TJ= +85°C

VIN= 4.15V

TJ= -40°C

4.19

4.20

0 20406080100

O

u

Load Current (mA)

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provid ed follo wing this no te are a st atis tical summa ry bas ed on a lim ited nu mber of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, C
Temperature = +25°C, VIN=V

OUT

= 2.2 µF Ceramic (X7R), CIN= 2.2 µF Ceramic (X7R), I

OUT

+ 0.8V, SHDN =1M pullup to VIN.

FIGURE 2-1: Output Voltage vs. Input
Voltage (V

=1.2V).

R

=1mA,

OUT

FIGURE 2-4: Output Voltage vs. Load
Current (V

=1.2V).

R

FIGURE 2-2: Output Voltage vs. Input
Voltage (V

FIGURE 2-3: Output Voltage vs. Input
Voltage (V

 2012 Microchip Technology Inc. DS25158B-page 5

=2.5V).

R

=4.2V).

R

FIGURE 2-5: Output Voltage vs. Load
Current (V

=2.5V).

R

FIGURE 2-6: Output Voltage vs. Load
Current (V

=4.2V).

R

MCP1710

0.10

0.15

0.20

0.25

0.30

pout Voltage (V)

TJ= +85°C

TJ= -40°C

TJ= +25°C

V

OUT

= 2.5V

-0.05

0.00

0.05

0 20406080100

Dr

o

Load Current (mA)

0.08

0.10

0.12

0.14

0.16

0.18

0.20

pout Voltage (V)

TJ= +85°C

TJ= -40°C

TJ= +25°C

V

OUT

= 4.2V

0.00

0.02

0.04

0.06

0 20406080100

Dr

o

Load Current (mA)

t Noise (μV/Hz)

V

IN

= 5.2V

V

OUT

= 4.2V

I

OUT

= 50 mA

1

10

V

IN

= 3.5V

V

OUT

= 2.5V

I

OUT

= 50 mA

V

IN

= 2.8V

V

OUT

= 1.8V

I

OUT

= 50 mA

Outp

u

Frequency (kHz)

0.0

0.1

0.01

0.1

1

10

100

1000

-

-50

-40

-30

-20

-10

0

10

PSRR (dB)

VIN= 2.5V
I

OUT

= 10 mA

-100

-90

-80

-70

60

0.01 0.1 1 10 100 1000
Frequency (kHz)

-60

-50

-40

-30

-20

-10

0

10

PSRR (dB)

VIN= 3.5V
I

OUT

= 10 mA

-100

-90

-80

-70

0.01 0.1 1 10 100 1000
Frequency (kHz)

-60

-50

-40

-30

-20

-10

0

10

PSRR (dB)

VIN= 5.2V
I

OUT

= 10 mA

-100

-90

-80

-70

0.01 0.1 1 10 100 1000
Frequency (kHz)

Note: Unless otherwise indicated, C
Temperature = +25°C, VIN=V

OUT

= 2.2 µF Ceramic (X7R), CIN= 2.2 µF Ceramic (X7R), I

OUT

+ 0.8V, SHDN =1M pullup to VIN.

FIGURE 2-7: Dropout Voltage vs. Load
Current (V

=2.5V).

R

=1mA,

OUT

FIGURE 2-10: Power Supply Ripple
Rejection vs. Frequency (V

=1.2V).

R

FIGURE 2-8: Dropout Voltage vs. Load
Current (V

=4.2V).

R

FIGURE 2-9: Noise vs. Frequency.

DS25158B-page 6  2012 Microchip Technology Inc.

FIGURE 2-11: Power Supply Ripple
Rejection vs. Frequency (V

=2.5V).

R

FIGURE 2-12: Power Supply Ripple
Rejection vs. Frequency (V

=4.2V).

R

MCP1710

V

OUT

= 1.2V

I

OUT

= 100 nA to 10 mA

AC1M 200 mV/div 10 mA/div

200 µs/div

V

OUT

= 2.5V

I

OUT

= 100 nA to 10 mA

AC1M 200 mV/div 10 mA/div

200 µs/div

V

OUT

= 4.2V

I

OUT

= 100 nA to 10 mA

AC1M 200 mV/div 10 mA/div

200 µs/div

I

OUT

= 10 mA

V

IN

= 2.5V to 3.5V

2 V/div 1 V/div

V

OUT

= 1.2V

10 ms/div

I

OUT

= 10 mA

V

IN

= 3.5V to 4.5V

2 V/div 1 V/div

V

OUT

= 2.5V

10 ms/div

I

OUT

= 10 mA

V

N

= 4.5V to 5.5V

2 V/div 1 V/div

V

OUT

= 4.2V

10 ms/div

Note: Unless otherwise indicated, C
Temperature = +25°C, VIN=V

OUT

= 2.2 µF Ceramic (X7R), CIN= 2.2 µF Ceramic (X7R), I

OUT

+ 0.8V, SHDN =1M pullup to VIN.

FIGURE 2-13: Dynamic Load Step
(V

=1.2V).

R

=1mA,

OUT

FIGURE 2-16: Dynamic Line Step
(V

=1.2V).

R

FIGURE 2-14: Dynamic Load Step
(V

=2.5V).

R

FIGURE 2-15: Dynamic Load Step
(V

=4.2V).

R

FIGURE 2-17: Dynamic Line Step
(V

=2.5V).

R

FIGURE 2-18: Dynamic Line Step
(V

=4.2V).

R

 2012 Microchip Technology Inc. DS25158B-page 7

MCP1710

I

OUT

= 100 nA

V

IN

= 2.5V

2 V/div 2 V/div

V

OUT

= 1.2V

10 ms/div

I

OUT

= 100 nA

V

IN

= 3.5V

2 V/div 2 V/div

V

OUT

= 2.5V

10 ms/div

I

OUT

= 100 nA

V

IN

= 5.2V

2 V/div 2 V/div

V

OUT

= 4.2V

10 ms/div

I

OUT

= 10 mA

SHDN

Signal

2 V/div 1 V/div

V

OUT

= 1.2V

5 ms/div

I

OUT

= 10 mA

SHDN

Signal

2 V/div 1 V/div

V

OUT

= 2.5V

5 ms/div

I

OUT

= 10 mA

SHDN

Signal

2 V/div 1 V/div

V

OUT

= 4.2V

5 ms/div

Note: Unless otherwise indicated, C
Temperature = +25°C, VIN=V

OUT

+ 0.8V, SHDN =1M pullup to VIN.

OUT

FIGURE 2-19: Startup From VIN
(V

=1.2V).

R

= 2.2 µF Ceramic (X7R), CIN= 2.2 µF Ceramic (X7R), I

FIGURE 2-22: Startup From SHDN (VR=1.2V).

OUT

=1mA,

FIGURE 2-20: Startup From V
(V

=2.5V).

R

FIGURE 2-21: Startup From V
(V

=4.2V).

R

IN

IN

FIGURE 2-23: Startup F rom SHDN
(V

=2.5V).

R

FIGURE 2-24: Startup F rom SHDN
(V

=4.2V).

R

DS25158B-page 8  2012 Microchip Technology Inc.