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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Dissipation
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Total
Device
30
Watts V
Junction to
Case Thermal
Resistance
o
5.00 C/W
Maximum
Temperature
Junction
o
150
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORLDMOS
10.0
Watts
Single Ended
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
-65 C to 150 C C A V
DC Drain
Current
oo
3.0
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70
L8801P
S08
P
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
10
40
10.0
WATTS OUTPUT )
dB
%
20:1 Relative
0.20
Idq = A, Vds = V, F =
Idq =
0.20
A, Vds = V, F =
Idq = 0.20
A, Vds = V, F =
28.0
28.0
28.0
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
1.0
1
1 7
0.8
0.90
5.50
30.0
1.0
15.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
0.10Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
28.0
0.10
V, Vgs = 0V
A, Vgs = VdsIds =
2.50
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
MHz
500
500
MHz
500
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 12/13/2001
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L8801P
POUT VS PIN GRAPH
L8801P Pin vs Pout Freq=1000MHz,
Vds=28Vdc, Idq=.2A
18
15
12
9
6
3
0
0 0.5 1 1.5 2
6
5
4
3
ID IN AMPS
2
1
Efficiency @10 watts = 40%
Pin in Watts
L2A 1 DICE IV
Gain
Pout
CAPACITANCE VS VOLTAGE
L2B 1 DIE CAPACITANCE
15
14
13
12
11
10
9
100
Ciss
10
Coss
1
0.1
0 5 10 15 20 25 30
Crss
VDS IN VOLTS
ID & GM VS VGSIV CURVE
100
10
1
L2B 1 DIE ID, GM vs VG
ID
GM
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
VDS IN VOLTS
Zin Zout PACKAGE DIMENSIONS IN INCHES
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
Tolerance .XX +/-0.01 .XXX +/-.005 inches
12/13/2001
POLYFET RF DEVICES
REVISION
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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