Datasheet L88016 Datasheet (Polyfet)

polyfet rf devices

General Description

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

Total
Device
Dissipation

TM

t

ABSOLUTE MAXIMUM RATINGS ( T =

Junction to
Case Thermal
Resistance

o

80

Watts V

1.80

C/W

Maximum
Junction
Temperature

L88016

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORLDMOS

Watts

30.0
Package Style

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

o

25 C )

Storage
Temperature

o

-65 C to 150 C200 C A V

DC Drain
Current

oo

4.5

Drain to
Gate
Voltage

70 V

Push - Pull

AQ

Drain to
Source
Voltage

70

Gate to
Source
Voltage

20

Gps

η

Bvdss

Idss
Igss

Vgs

Idsat
Ciss
Crss
Coss

RF CHARACTERISTICS (

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR

14

55

30.0

WATTS OUTPUT )

dB

%

20:1 Relative

0.40

Idq = A, Vds = V, F =
Idq =

0.40

A, Vds = V, F =

Idq = 0.40

A, Vds = V, F =

28.0

28.0

28.0

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V

Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance

65

1.0

1

1 7

0.8

0.90

5.50

30.0

1.0

15.0

V

mA

uA

V

Mho

Ohm

Amp

pF
pF
pF

0.10Ids = mA, Vgs = 0V

Vds =
Vds = 0V Vgs = 30V

Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V

Vds =
Vds =
Vds =

28.0

0.10

V, Vgs = 0V

A, Vgs = VdsIds =

2.50

Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0

MHz

500
500

MHz

500

MHz

A

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 04/27/2001

L88016

POUT VS PIN GRAPH

L88016 POUT vs PIN F=500 MHZ; IDQ=0.4A; VDS=28V

40

35

30

25

20

15

10

0 0.5 1 1.5 2 2.5 3 3.5 4

6

5

4

3

ID IN AMPS

2

1

PIN IN WATTS

Efficiency = 55%

L2A 1 DICE IV

POUT GAIN

18.00

16.00

14.00

12.00

10.00

CAPACITANCE VS VOLTAGE

L2B 1 DIE CAPACITANCE

100

Ciss

10

Coss

1

0.1
0 5 10 15 20 25 30

Crss

VDS IN VOLTS

ID & GM VS VGSIV CURVE

100

10

1

L2B 1 DIE ID, GM vs VG

ID

GM

0

0 2 4 6 8 10 12 14 16 18 20

vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v

VDS IN VOLTS

0.1
0 2 4 6 8 10 12 14

Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 04/27/2001