Datasheet KSH122ITU, KSH122TM Specification

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KSH122 / KSH122I NPN Silicon Darlington Transistor

KSH122 / KSH122I — NPN Silicon Darlington Transistor

November 2013

Features

• D-PAK for Surface Mount Applications

• High DC Current Gain

• Built-in Damper Diode at E-C

• Lead Formed for Surface Mount Applications (No Suffix)

• Straight Lead (I-PAK, “ - I ” Suffix)

• Electrically Similar to Popular TIP122

• Complement to KSH127

Applications

• Switching Regulators

• Converters

• Power Amplifiers

D-PAK I-PAK

1.Base 2.Collector 3.Emitter

Description

Designed for general-purpose power and switching, such as output or driver stages in applications.

Equivalent Circuit

R1 8kΩ≅ R2 0.12kΩ≅

Ordering Information

Part Number Top Mark Package Packing Method

KSH122TF KSH122 TO-252 3L (DPAK) Tape and Reel

KSH122TM KSH122 TO-252 3L (DPAK) Tape and Reel

KSH122ITU KSH122-I TO-251 3L (IPAK) Rail

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Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating co nd iti ons an d s tres si ng the parts to these levels is not reco mme nded. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Symbol Parameter Value Unit

V V V

CBO CEO EBO

STG

Collector-Base Voltage 100 V Collector-Emitter Voltage 100 V Emitter-Base Voltage 5 V Collector Current (DC) 8 A

Collector Current (Pulse) 16 A

Base Current 120 mA

Collector Dissipation (TC=25°C) 20.00

Collector Dissipation (T Junction Temperature 150 °C

=25°C) 1.75

Storage Temperature - 65 to 150 °C

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

KSH122 / KSH122I — NPN Silicon Darlington Transistor

Symbol Parameter Conditions Min. Typ. Max. Unit

CEO

CBO

EBO

BE Cob

Note:

1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.

Collector-Emitter Sustaining

(sus)

Voltage

(1)

Collector Cut-Off Current V Collector Cut-Off Current V Emitter Cut-Off Current V

DC Current Gain

Collector-Emitter Saturation

(sat)

Voltage

(1)

(sat) Base-Emitter Saturation Voltage

(on) Base-Emitter On Voltage

(1)

Output Capacitance V

IC = 30 mA, IB = 0 100 V

= 50 V, IB =0 10 μA

= 100 V, IE = 0 10 μA

= 5 V, IC = 0 2 mA

= 4 V, IC = 4 A 1000 12000

= 4 V, V

= 8 A 100

IC = 4 A, IB = 16 mA 2 I

= 8 A, IB = 80 mA 4

(1)

IC = 8 A, IB = 80 mA 4.5 V V

= 4 V, IC = 4 A 2.8 V

= 10 V, IE = 0, f = 0.1 MHz 200 pF

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Typical Performance Characteristics

0.1 1 10

100

10k

VCE = 4V

, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

IC = 250 I

VCE(sat)

VBE(sat)

(sat), V

(sat)[V], SATURATION VOLTAGE

IC[A], COLLECTOR CURRENT

0.1 1 10 100

100

1000

[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

0.1 1 10

0.01

0.1

VCC= 30V IC=250I

IB1=-I

tD, VBE(off)=0

[μs], TURN ON TIME

IC[A], COLL E CTOR C U RRENT

0.1 1 10

0.1

VCC=30V I

=250I

STG

[μs], TURN OFF TIME

IC[A], COLLECTOR CURRENT

1 10 100 1000

0.01

0.1

100

[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

KSH122 / KSH122I — NPN Silicon Darlington Transistor

Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 3. Collector Output Capacitance Figure 4. Turn-On Time

Figure 5. Turn-Off Time Figure 6. Safe Operating Area

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Typical Performance Characteristics (Continued)

0 25 50 75 100 125 150 175

[W], POWER DISSIPATION

TC[oC], CASE TEMPERATURE

Figure 7. Power Derating

KSH122 / KSH122I — NPN Silicon Darlington Transistor

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Physical Dimensions

TO-252 3L

KSH122 / KSH122I — NPN Silicon Darlington Transistor

Figure 7. 3-LEAD, TO-252, JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packagin g area for t he most rece nt package d rawings:

http://www.fairchildsemi.com/dwg/TO/TO252D03.pdf

For current tape and reel specifications, visit Fairchild Semicond uctor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-TO252D03.pdf

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Physical Dimensions (Continued)

TO-251 3L

D) TO251A03REVA.

KSH122 / KSH122I — NPN Silicon Darlington Transistor

Figure 8. TO-251 (IPAK) MOLDED, 3-LEAD (ACTIVE)

Always visit Fairchild Semiconductor’s online packagin g area for t he most rece nt package d rawings:

http://www.fairchildsemi.com/dwg/TO/TO251A03.pdf

For current tape and reel specifications, visit Fairchild Semicond uctor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-TO251A03.pdf

Page 7

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Datasheet Identification

Product Status

Definition

Advance Information

Formative

In Design

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Rev. I66