Datasheet KSD986, KSD985 Datasheet (Fairchild Semiconductor)

KSD985/986

Low Frequency Power Amplifier

• Low Speed Switching Industrial Use

KSD985/986

1

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

Collector-Base Voltage 150 V Collector-Emitter Volage

: KSD985 : KSD986

V

EBO

I

C ICP IB

P

C

PC

T

J

T

STG

* PW≤300µs, Duty Cycle10%

Emitter-Base Voltage 8.0 V Collector Current (DC) 1.5 A *Collector Current (Pulse) 3.0 A Base Current 0.15 A Collector Dissipation (Ta=25°C) 1.0 W Collector Dissipation (TC=25°C) 10 W Junction Temperature 150 °C Storage T emperature - 55 ~ 150 °C

Electrical Characteristics

Symbol Parameter Test Condition Min. Typ. Max. Units

I

CBO

I

CER

ICEX1

I

CEX2

IEBO

h

FE1

h

FE2

(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 1mA 1.5 V

V

CE

(sat) *Base-Emitter Saturation Voltage IC = 1A, IB = 1mA 2.0 V

V

BE

t

ON

t

STG

t

F

* Pulse Test: PW≤350µs, Duty Cycle≤2%

Collector Cut-off Current V Collector Cut-off Current V

Collector Cut-off Current V

Emitter Cut-off Current V *DC Current Gain V

Turn ON Time V Storage Time 1.0 µs Fall Time 1.0 µs

TC=25°C unless otherwise noted

60 80

TC=25°C unless otherwise noted

= 60V, IE = 0 10 µA

CB

= 60V, R

CE

@ T

C

= 60V, VBE(off) = -1.5A

CE

= 60V, VBE(off) = -1.5A

V

CE

@ T

C

= 5V, IC = 0 1.0 mA

EB

= 2V, IC = 0.5A

CE

= 2V, IC = 1A

V

CE

= 50V, IC = 1A

CC

= - IB2 = 1mA

I

B1

R

= 50Ω

L

BE

= 125°C

V V

= 51Ω

1.0 mA

10

1.0

1000 2000 30000

0.5 µs

µA

mA

hFE Classification

Classification R O Y

h

FE2

2000 ~ 5000 4000 ~ 10000 8000 ~ 30000

Typical Characteristics

KSD985/986

2.0

1.6

1.2

0.8

[A], COLLECTOR CURRENT

0.4

C

I

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

IB = 220uA

IB = 200uA

IB = 180uA

IB = 160uA

IB = 140uA

IB = 120uA

IB = 100uA

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

10

VBE(sat)

1

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

0.1

0.1 1 10

VCE(sat)

IC[A], COLLECTOR CURRENT

IC = 1000 I

IB = 80uA

10000

VCE = 2V

1000

, DC CURRENT GAIN

FE

h

100

0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

160

B

140

120

100

DERATING

C

80

60

dT(%), I

40

20

0

0 25 5 0 75 100 125 150 175 200

S/b Limited

Dissipation Limited

TC[oC], CASE TEMPERATURE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

[A], COLECTOR CURRENT

0.50

C

I

0.25

0.00 0 102030405060708090100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Reverse Bias Safe Operating Areas Figure 6. Safe Operating Area

Figure 4. Derating Curve Of Safe Operating Areas

10

1

0.1

[A], COLLECTOR CURRENT

C

I

0.01 1 10 100

VCE[V], COLLECTOR-EMITTER VOLTAGE

3ms

Dissipation Limited

DC

1ms

300us

S/b Limited

30us

100us

Rev. A, February 2000

KSD985/986

Typical Characteristics

16

14

12

10

8

6

4

[W], POWER DISSIPATION

C

P

2

0

0 25 50 75 100 125 150 175

TC[oC], CASE TEMPERATURE

Figure 7. Power Derating

(Continued)

Rev. A, February 2000

Package Demensions

KSD985/986

TO-126

ø3.20

0.75

1.60

0.75

2.28TYP

[2.28±0.20]

±0.10

3.90

±0.10

8.00

#1

±0.30

2.28TYP

[2.28±0.20]

14.20MAX

±0.30

13.06

±0.20

11.00

(1.00)

±0.20

16.10

0.50

3.25

(0.50)

1.75

+0.10 –0.05

±0.20

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™

2

E

CMOS™ FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™

HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench

®

QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.