Page 1
查询KSD1616供应商
Audio Frequency Power Amplifier & Medium
Speed Swit ching
• Complement to KSB1116/1116A
KSD1616/1616A
KSD1616/1616A
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle < 50%
Collector-Base Voltage : KSD1616
Collector-Emitter Voltage : KSD1616
Emitter-Base Voltage 6 V
Collector Current (DC) 1 A
* Collector Current (Pulse) 2 A
Collector Power Dissipation 0.75 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
(on) * Base-Emitter On Voltage VCE=2V, IC=50mA 600 640 700 mV
BE
(sat) * Collector-Emitter Saturation Voltage IC=1A, IB=50mA 0.15 0.3 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC=1A, IB=50mA 0.9 1.2 V
V
BE
C
ob
f
T
t
ON
t
STG
t
F
* Pulse Test: PW<350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current VCB=60V, IE=0 100 nA
Emitter Cut-off Current VEB=6V, IC=0 100 nA
DC Current Gain : KSD1616
: KSD1616A
Output Capacitance VCE=10V, IE=0, f=1MHz 19 pF
Current Gain Bandwidth Product VCE=2V, IC=100mA 100 160 MHz
Turn On Time VCC=10V, IC=100mA
Storage Time 0.95 µs
Fall Time 0.07 µs
Ta=25°C unless otherwise noted
: KSD1616A
: KSD1616A
Ta=25°C unless otherwise noted
VCE=2V, IC=100mA
V
=2V, IC=1A
CE
I
= -IB2=10mA
B1
(off) = -2 ~-3V
V
BE
135
135
81
60
120
50
60
600
400
0.07 µs
V
V
V
V
h
Classification
FE1
Classification Y G L
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
135 ~ 270 200 ~ 400 300 ~ 600
Page 2
Typical Characteristics
KSD1616/1616A
100
80
60
40
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
20
[mA], COLLECTOR CURRENT
C
I
0
0246810
IB = 50µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[mA], COLLECTOR CURRENT
VCE = 2V
= 4.0mA
IB = 3.5mA
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
1.0
IB = 5.0mA
IB = 4.5mA
0.8
0.6
B
I
0.4
[A], COLLECTOR CURRENT
0.2
C
I
0.0
0.00.20.40.60.81.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
VCE(sat)
IC = 20 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Switching Time
©2002 Fairchild Semiconductor Corporation
Collector-Emitter Saturation Voltage
10
IE=0
f = 1MHz
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
-0.001 -0.01 -0.1 -1
IC[A], COLLECTOR CURRENT
VCC = -10V
IC = 10IB1 = -10I
B2
t
STG
t
F
t
ON
Rev. A2, September 2002
Page 3
Typical Characteristics
(Continued)
KSD1616/1616A
1000
100
10
1
0.01 0.1 1 10
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE = 2V
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
DC
200ms
10ms
PW=1ms
Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area
0.8
0.7
0.6
0.5
0.4
0.3
0.2
[W], POWER DISSIPATION
C
P
0.1
0.0
0 25 50 75 100 125 150 175 200
Ta[oC], AMBIENT TEMPERATURE
D1616
D1616A
Figure 9. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Page 4
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSD1616/1616A
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 5
TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
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2
CMOS™
E
EnSigna™
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®
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FASTr™
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HiSeC™
2
C™
I
Across the board. Around the world.™
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OCXPro™
OPTOLOGIC
®
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Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
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SILENT SWITCHER
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®
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®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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