Datasheet KSD1691 Datasheet (Fairchild Semiconductor)

KSD1691

Feature

• Low Collector-Emtter Saturation Voltage & Large Collector Current

• High Power Dissipation: P

• Complementary to KSB1151

= 1.3W (Ta=25°C)

C

KSD1691

1

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO VEBO IC ICP IB PC PC TJ TSTG

* PW≤10ms, duty Cycle≤50%

Collector-Base Voltage 60 V Collector-Emitter Voltage 60 V Emitter-Base Voltage 7 V Collector Current (DC) 5 A *Collector Current (Pulse) 8 A Base Current (DC) 1 A Collector Dissipation (Ta=25°C) 1.3 W Collector Dissipation (TC=25°C) 20 W Junction Temperature 150 °C Storage T emperature - 55 ~ 150 °C

Electrical Characteristics

Symbol Parameter Test Condition Min. Typ. Max. Units

I

CBO IEBO hFE1

h

FE2

h

FE3

(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.1 0.3 V

V

CE

(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.9 1.2 V

V

BE

t

ON

t

STG

t

F

* Pulse test: PW≤50µs, duty Cycle≤2% Pulsed

Collector Cut-off Current V Emitter Cut-off Cu rr e nt V *DC Current Gain V

Turn ON Time V Storage Time 1.1 2.5 µs Fall Time 0.2 1 µs

TC=25°C unless otherwise noted

= 50V, IE = 0 10 µA

CB

= 7V, IC = 0 10 µA

EB

= 1V, IC = 0.1A

CE

= 1V, IC = 2A

V

CE

V

= 1V, IC = 5A

CE

= 10V, IC = 2A

CC

= - IB2 = 0.2A

I

B1

= 5Ω

R

L

60

100

50

400

0.2 1 µs

hFE Classificntion

Classification O Y G

h

FE 2

100 ~ 200 160 ~ 320 200 ~ 400

Typical Characteristics

KSD1691

= 100mA

I

B

= 80mA

I

B

= 40mA

I

B

= 30mA

I

B

IB = 20mA

IB = 10mA

IB = 0

= 60mA

I

B

1000

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

10

8

6

4

2

Ic[A], COLLECTOR CURRENT

0

= 150mA

= 200mA

B

I

0.4 0.8 1.2 1.6 2.0

VCE[V], COLLECTOR-EMITTER VOLTAGE

VCE = 2V

VCE = 1V

Figure 1. Static Characteristic Figure 2. DC current Gain

10mS

Dissipation L imited

200mS

2mS

s/b Limited

(MAX)

CEO

V

VBE(sat)

Ic = 10 I

B

10

1

0.1

(sat)[V], SATURATION VOLTAGE

CE

(sat)

CE

(sat), V

BE

V

0.01

V

0.1 1 10

IC[A], COLLECTOR CURRENT

10

Ic(Pulse)MAX

Ic(DC)MAX

1

[A], COLLECTOR CURRENT

C

I

0.1 1 10 100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

10

8

6

4

2

[A], COLLECTOR CURRENT

C

I

0

20 40 60 80 100

VCE[V], COLLEC TO R - EM ITTER VOLTA GE

Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas

Figure 4. Forward Bias Safe Operating Area

(SUS)

CEO

V

160

140

120

100

80

60

[%], Ic DERATING

T

d

40

20

0

0 25 50 75 100 125 150 175 200

TC[oC], CASE TEMPERATURE

s/b LIMITED

DISSIPATION LIMITED

Rev. A, February 2000

KSD1691

Typical Characteristics

30

25

20

15

10

[W], POWER DISSIPATION

C

5

P

0

25 50 75 100 125 150 175

TC[oC], CASE TEMPERATURE

Figure 7. Power Derating

(Continued)

Rev. A, February 2000

Package Demensions

KSD1691

TO-126

ø3.20

0.75

1.60

0.75

2.28TYP

[2.28±0.20]

±0.10

3.90

±0.10

8.00

#1

±0.30

2.28TYP

[2.28±0.20]

14.20MAX

±0.30

13.06

±0.20

11.00

(1.00)

±0.20

16.10

0.50

3.25

(0.50)

1.75

+0.10 –0.05

±0.20

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™

2

E

CMOS™ FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™

HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench

®

QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

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LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.