Page 1
KSC5367F
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
• High Collector-Base Voltage
KSC5367F
1
1.Base 2.Collector 3.Emitter
TO-220F
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Collector-Base Voltage 1600 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 12 V
Collector Current (DC) 3 A
*Collector Curren (Pulse) 6 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Power Dissipation(TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Thermal Characteristics
Symbol Characteristics Rating Unit
R
θjc
R
θja
Thermal Resistance Junction to Case 3.1 °C/W
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
Junction to Ambient 62.5
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
Page 2
KSC5367F
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 250mA, IB = 25mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = 500mA, IB = 50mA - - 1.5 V
V
BE
C
ob
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 0.5mA, IE = 0 1600 - - V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 - - V
Emitter-Base Breakdown Voltage IC =0.5mA, IC = 0 12 - - V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Output Capacitance V
Turn On Time V
Storage Time - 2.2 µs
Falling Time - - 0.5 µs
Turn On Time V
Storage Time - - 4.0 µs
Falling Time - - 0.5 µs
= 1,600V, IE = 0 - - 20 µA
CB
= 12V, IC = 0 - - 20 µA
EB
= 3V, IC = 0.4A
CE
= 10V, IC = 5mA
V
CE
I
= 500mA, IB = 50mA
C
= 1A, IB = 0.2A
I
C
=10V, IE = 0, f = 1MHz - 40 - pF
CB
= 125V, IC = 0.5A
CC
= 42mA, IB2 = -333mA
I
B1
R
= 250Ω
L
= 250V, IC = 1A
CC
= 0.2A, IB2 = -0.4A
I
B1
R
= 250Ω
L
12
8
-
-
-
-
35
-
-
-
-
--0.5µs
--0.5µs
-
2.5
4.0
2.5
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
Page 3
Typical Characteristics
KSC5367F
5
4
3
2
[A], COLLECTOR CURRENT
C
1
I
0
0246810
VCE[V], COLLECTOR-EMITTER VOL T AG E
IB = 1.4A
IB = 1.2A
IB = 1A
IB = 0.8A
IB = 0.6A
IB = 0.4A
IB = 0.2A
100
10
1
, DC CURRENT GAIN
FE
h
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VCE(sat)
VBE(sat)
IC = 10I
B
s], TIME
µ
[
s], t
µ
[
s], t
µ
[
t
10
1
F
STG
0.1
ON
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VCC=250V IC=5IB1=-2.5IB1
t
STG
t
F
t
ON
VCE = 5V
VCE = 3V
(sat), V
BE
0.01
V
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
s], TIME
µ
[
F
s], t
µ
[
STG
s], t
0.1
µ
[
ON
t
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 4. Switching Time
VCC=125V
IC=0.5A
1IB1=42mA
t
STG
t
ON
t
F
10
PULSE
DC
1
0.1
[A], COLLECTOR CURRENT
C
0.01
I
1E-3
1 10 100 1000
VCE[V], COLLECTOR EMITTER VOLTAGE
100µs
1ms
5ms
Rev. B1, December 2002
Page 4
KSC5367F
Typical Characteristics
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
100 1000 10000
VCE[V], COLLECTOR EMITTER VOLTAGE
(Continued)
IB2=200mA
L=200µH
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
Page 5
Package Dimensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
KSC5367F
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
±0.10
0.35
2.54TYP
±0.20
[2.54
±0.10
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
Page 6
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C™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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