Page 1
Power Amplifier Applications
• Complement to KSB1017
KSD1408
KSD1408
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current 4 A
Base Current 0.4 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
IEBO
h FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 3A. IB = 0.3A 0.45 1.5 V
CE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 80 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 80V, IE = 0 30 µA
CB
= 5V, IC = 0 100 µA
EB
= 5V, IC = 0.5A
CE
= 5V, IC = 3A
V
CE
= 5V, IC = 3A 1 1.5 V
CE
= 5V, IC = 0.5A 8 MHz
CE
= 10V, f = 1MHz 90 pF
CB
40
15 50
240
h
Classification
FE1
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240
Page 2
Typical Characteristics
KSD1408
= 200mA
I
B
= 160mA
I
B
= 120mA
I
B
= 100mA
I
B
= 80mA
I
B
4.0
= 240mA
I
3.2
B
IB = 60mA
2.4
1.6
[A], COLLECTOR CURRENT
0.8
C
I
0.0
012345
IB = 40mA
IB = 20mA
IB = 0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.001 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.001 0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
4
3
2
1
[A], COLLECTOR CURRENT
C
I
0
0.0 0.4 0.8 1.2 1.6
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
ICmax(pulse)
IC(max)
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Figure 4. Collector Output Capacitance
1mS
10ms
100mS
1S
DC
MAX
CEO
V
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
Page 3
Package Demensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
KSD1408
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
0.35
2.54TYP
±0.20
[2.54
±0.10
±0.10
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
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not intended to be an exhaustive list of all such trademarks.
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2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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