Page 1
KSC5402D/KSC5402DT
KSC5402D/KSC5402DT
High Voltage High Speed Power Switch
Application
• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
Equivalent Circuit
C
1
TO-220
B
• Small Variance in Storage Time
D-PAK
• Two Package Choices; D-PAK or TO-220
E
1
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Collector-Base Voltage 1000 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 12 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 5 A
Base Current (DC) 1 A
*Base Current (Pulse) 2 A
Power Dissipation(TC=25°C) : D-PAK *
: TO-220
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
30
50
W
Thermal Characteristics
Symbol Characteristics
R
θjc
R
θja
T
L
* Mounted on 1” square PCB (FR4 ro G-10 Material)
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
Thermal Resistance Junction to Case 2.5 4.17 * °C/W
Maximum Lead Temperature for Soldering Purpose
; 1/8” from Case for 5 Seconds
TC=25°C unless otherwise noted
Rating Unit
TO-220 D-PAK
Junction to Ambient 62.5 50
270 270 °C
Page 2
KSC5402D/KSC5402DT
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CEO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=0.4, IB=0.04A TC=25°C0.250.6
V
CE
(sat) Base-Emitter Saturation Voltage IC=0.4A,
V
BE
C
ib
C
ob
f
T
V
F
Collector-Base Breakdown Voltage IC=1mA, IE=0 1000 1090 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 450 525 V
Emitter-Base Breakdown Voltage IE=1mA, IC=0 12 14 V
Collector Cut-off Current V
I
EB
CES
=0
=1000V,
T
=25°C 0.03 100 µA
C
=125°C 1.2 500
T
C
Collector Cut-off Current VCE=450V, VB=0 TC=25°C 0.3 100 µA
=125°C 15 500
T
C
Emitter Cut-off Current VEB=10V, IC=0 0.01 100 µA
DC Current Gain VCE=1V, IC=0.4A TC=25°C1429
=125°C8 17
T
=1V, IC=1A TC=25°C69
V
CE
I
=1A, IB=0.2A TC=25°C 0.3 0.75 V
C
=0.04A
I
B
=1A, IB=0.2A TC=25°C0.851.1V
I
C
C
=125°C4 6
T
C
=125°C0.41.0
T
C
=125°C0.651.2V
T
C
T
=25°C0.781.0V
C
T
=125°C0.650.9V
C
=125°C0.751.0V
T
C
Input Capacitance VEB=8V, IC=0, f=1MHz 330 500 pF
Output Capacitance VCB=10V, IE=0, f=1MHz 35 100 pF
Current Gain Bandwidth Product IC=0.5A, VCE=10V 11 MHz
Diode Forward Voltage IF=1A TC=25°C0.861.5V
I
=0.2A TC=25°C0.751.2V
F
=0.4A TC=25°C0.81.3V
I
F
=125°C0.6 V
T
C
=125°C0.65 V
T
C
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
Page 3
KSC5402D/KSC5402DT
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min Typ. Max. Uni ts
t
fr
(DSAT) Dynamic Saturation Voltage IC=0.4A,
V
CE
RESISTIVE LOAD SWITCHING (D.C <
t
ON
t
OFF
INDUCTIVE LOAD SWITCHING (V
t
STG
t
F
t
C
t
STG
t
F
t
C
t
STG
t
F
t
C
Diode Froward Recvery Time
(di/dt=10A/µs)
10%, Pulse Width=20µs)
Turn On Time IC=1A,
Turn Off Time TC=25°C 0.95 1.25 µs
=15V)
CC
Storage Time IC=0.4A,
Fall Time TC=25°C 60 175 ns
Cross-over Time TC=25°C 90 175 ns
Storage Time IC=0.8A,
Fall Time TC=25°C 110 175 ns
Cross-over Time TC=25°C 125 350 ns
Storage Time IC=1A,
Fall Time TC=25°C 105 150 ns
Cross-over Time TC=25°C 125 150 ns
IF=0.2A
=0.4A
I
F
I
=1A
F
=40mA
I
B1
=300V
V
CC
I
=1A,
C
I
=200mA
B1
=300
V
CC
=200mA
I
B1
I
=150mA
B2
=300V
V
CC
= 300Ω
R
L
I
=40mA
B1
=200mA,
I
B2
Vz=300V
L
=200H
C
I
=160mA
B1
=160mA,
I
B2
Vz=300V
L
=200H
C
I
=200mA,
B1
=500mA,
I
B2
=300V
V
Z
L
=200µH
C
@ 1µs7.5V
@ 3µs2.5V
@ 1µs11.5V
@ 3µs1.5V
=25°C 110 150 ns
T
C
=125°C 135 ns
T
C
=125°C1.4 µs
T
C
=25°C0.560.65µs
T
C
T
=125°C0.7 µs
C
=125°C75 ns
T
C
=125°C90 ns
T
C
=25°C2.75µs
T
C
=125°C3 µs
T
C
=125°C 180 ns
T
C
=125°C 185 ns
T
C
=25°C1.11.2µs
T
C
=125°C1.35 µs
T
C
=125°C75 ns
T
C
=125°C 100 ns
T
C
540
520
480
ns
ns
ns
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
Page 4
Typical Characteristics
KSC5402D/KSC5402DT
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
IB = 1A
900mA
800mA
700mA
600mA
500mA
400mA
300mA
200mA
100mA
100
℃
TJ=25
10
, DC CURRENT GAIN
FE
h
IB = 0
0.0
0123456
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
1E-3 0.01 0.1 1
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
℃
100
10
, DC CURRENT GAIN
FE
h
1
1E-3 0.01 0.1 1
TJ=125
TJ=25
℃
IC[A], COLLECTOR CURRENT
VCE = 6V
IC = 5 I
B
10
1
(sat)[V], SATURAT ION VOLTAGE
CE
(sat), V
0.1
BE
V
1E-3 0.01 0.1 1
IC[A], COLLECTOR CURRE NT
TJ=125
VCE = 1V
℃
℃
TJ=125
℃
TJ=25
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
10
IC = 5 I
B
1
(sat)[V], SATURAT ION VOLTAGE
CE
(sat), V
BE
V
0.1
1E-3 0.01 0.1 1
IC[A], COLLECTOR CURRE NT
Figure 5. Base-Emitter Saturation Voltage Figure 6. Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
TJ=25
IC = 10 I
B
10
℃
℃
TJ=125
1
(sat)[V], SATURATION V O LT A G E
CE
(sat), V
0.1
BE
V
1E-3 0.01 0.1 1
℃
TJ=125
℃
TJ=25
IC[A], COLLECTO R CURRENT
Rev. B2, December 2002
Page 5
KSC5402D/KSC5402DT
Typical Characteristics
TJ=25
℃
10
IC = 10 I
B
1
(sat)[V], SATURATION V O LT A G E
CE
(sat), V
BE
V
0.1
1E-3 0.01 0.1 1
IC[A], COLLECTO R CURRENT
(Continued)
℃
TJ=125
1000
C
ib
100
CAPACITANCE [pF]
10
1 10 100
REVERSE VOLTAGE [V]
Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance
2.0
1.5
℃
TJ=25
550
f=1MHz
C
ob
2.0A
1.0
0.4A
IC=0.2A
0.5
COLLECTOR VOLTAGE [V]
0.0
1E-3 0.01 0.1 1
IC[A], COLLECTO R CURRENT
1.0A
1.5A
500
[ns], FORWARD RECOVERY TIME
fr
t
450
0.0 0.5 1.0
IF [A], FORWARD CURRENT
Figure 9. Typical Collector Saturation Region Figure 10. Forward Recovery Time
10
1
[V], VOLTAGE
FD
V
0.1
0.01 0.1 1
TJ=25
℃
IFD [A], CURRENT
TJ=125
IC=5IB1=2I
B2
VCC=300V
PW=40µs
300
℃
200
[ns], TIME
on
t
100
0.4 0.6 0.8 1.0 1.2 1.4
TJ=25
Ic [A], COLLECTOR CURRENT
℃
TJ=125
℃
Figure 11. Diode Forward Voltage Figure 12. Resistive Switching Time, t
©2002 Fairchild Semiconductor Corporation
on
Rev. B2, December 2002
Page 6
KSC5402D/KSC5402DT
Typical Characteristics
2.0
1.5
s], TIME
µ
[
off
t
TJ=25
1.0
0.4 0.6 0.8 1.0 1.2 1.4
Ic [A], COLLECTOR CURRENT
Figure 13. Resistive Switching Time, t
100
90
80
70
[ns], TIME
fi
t
60
50
0.4 0.6 0.8 1.0 1.2 1.4
IC=10IB1=2I
VCC=15V
VZ=300V
LC=200µH
℃
TJ=25
Ic [A], COLLECTOR CURRENT
℃
TJ=125
℃
B2
℃
TJ=125
(Continued)
IC=5IB1=2I
B2
VCC=300V
PW=40µs
off
850
800
750
700
[ns], TIME
si
650
t
600
550
0.4 0.6 0.8 1.0 1.2 1.4
TJ=25
IC=10IB1=2I
B2
VCC=15V
VZ=300V
LC=200µH
℃
TJ=125
℃
Ic [A], COLLECTOR CURRENT
Figure 14. Inductive Switching Time, t
IC=10IB1=2I
VCC=15V
VZ=300V
LC=200µH
℃
B2
130
120
110
100
90
[ns], TIME
C
t
80
70
60
0.4 0.6 0.8 1.0 1.2 1.4
TJ=25
TJ=125
si
℃
Ic [A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, t
30
25
s], TIME
µ
[
si
t
20
0.4 0.6 0.8 1.0 1.2 1.4
IC=5IB1=5I
VCC=15V
VZ=300V
LC=200µH
Ic [A], COLLECTOR CURRENT
Figure 17. Inductive Switching Time, t
©2002 Fairchild Semiconductor Corporation
fi
℃
TJ=125
℃
TJ=25
B2
Figure 16. Inductive Switching Time, t
450
IC=5IB1=5I
B2
VCC=15V
400
VZ=300V
LC=200µH
350
300
250
[ns], TIME
fi
t
200
150
100
50
0.4 0.6 0.8 1.0 1.2 1.4
TJ=25
℃
TJ=125
℃
c
Ic [A], COLLECTOR CURRENT
si
Figure 18. Inductive Switching Time, t
Rev. B2, December 2002
fi
Page 7
KSC5402D/KSC5402DT
Typical Characteristics
TJ=25
TJ=125
℃
TJ=125
℃
TJ=25
℃
℃
450
IC=5IB1=5I
B2
VCC=15V
400
VZ=300V
LC=200µH
350
300
250
[ns], TIME
C
200
t
150
100
50
0.4 0.6 0.8 1.0 1.2 1.4
I
[A], COLLECTOR CURRENT
c
Figure 19. Inductive Switching Time, t
160
140
120
100
[ns], TIME
fi
t
80
60
40
0.4 0.6 0.8 1.0 1.2 1.4
Ic [A], COLLECTOR CURRENT
(Continued)
c
IC=5IB1=2I
B2
VCC=15V
VZ=300V
LC=200µH
1.6
1.4
1.2
s], TIME
1.0
µ
[
si
t
0.8
IC=5IB1=2I
B2
VCC=15V
VZ=300V
0.6
LC=200µH
0.4 0.6 0.8 1.0 1.2 1.4
TJ=25
℃
TJ=125
℃
Ic [A], COLLECTOR CURRENT
Figure 20. Inductive Switching Time, t
200
180
160
140
120
[ns], TIME
C
t
100
80
60
0.4 0.6 0.8 1.0 1.2 1.4
℃
TJ=125
℃
TJ=25
IC=5IB1=2I
VCC=15V
VZ=300V
LC=200µH
si
B2
Ic [A], COLLECTOR CURRENT
Figure 21. Inductive Switching Time, t
10
1
0.1
[A], COLLECTOR CU RRENT
C
I
0.01
10 100 1000
DC
VCE[V], COLLECTOR-EMITTER V O LTAG E
Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating
©2002 Fairchild Semiconductor Corporation
5ms
fi
1µs
10µs
50µs
1ms
Figure 22. Inductive Switching Time, t
40
30
20
[W], POWER DISSIPATION
10
C
P
0
0 25 50 75 100 125 150
c
TC[℃], CASE TEMPERATURE
Rev. B2, December 2002
Page 8
Package Dimensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
KSC5402D/KSC5402DT
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
Page 9
KSC5402D/KSC5402DT
Package Dimensions
6.60 ±0.20
5.34 ±0.30
(4.34)(0.50) (0.50)
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
(Continued)
[2.30±0.20]
D-PAK
2.70 ±0.20
0.76 ±0.10
2.30TYP
0.70 ±0.20
6.10 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
±0.10
0.91
0.89 ±0.10
2.30 ±0.10
0.50 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.70)
MIN0.55
(1.00)
(0.90)
(2XR0.25)
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
(0.10) (3.05)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
Page 10
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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ActiveArray™
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DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
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HiSeC™
2
C™
I
Across the board. Around the world.™
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ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
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SILENT SWITCHER
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production T his dat asheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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