Page 1
Audio Power Amplifier
• High Current Capability : IC=13A
• High Power Dissipation
•Wide S.O.A
• Complement to KSA1943
KSC5200
KSC5200
1
1.Base 2.Collector 3.Emitter
TO-264
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage 230 V
Collector-Emitter Voltage 230 V
Emitter-Base Voltage 5 V
Collector Current(DC) 13 A
Base Current 1.5 A
Collector Dissipation (TC=25°C) 130 W
Junction Temperature 150 °C
Storage Temperature - 50 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V
V
CE
(on) Base-Emitter ON Voltage VCE=5V, IC=7A 1.0 1.5 V
V
BE
f
T
C
ob
* Pulse Test : PW=20us
Collector-Base Breakdown Voltage IC=5mA, IE=0 230 V
Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 230 V
Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V
Collector Cut-off Current VCB=230V, IE=0 5.0 uA
Emitter Cut-off Cu rr en t VEB=5V, IC=0 5.0 uA
* DC Current Gain VCE=5V, IC=1A 55 160
DC Current Gain VCE=5V, IC=7A 35 60
Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
Output Capacitance VCB=10V, f=1MHz 200 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
h
Classification
FE
Classification R O
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001
55 ~ 110 80 ~ 160
Page 2
Typical Characteristics
KSC5200
16
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
0 2 4 6 8 10 12 14 16 18 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
IB=200mA
IB = 180mA
IB = 160mA
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
IB = 0
IC = 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
1E-3 0.01 0.1 1 10 100
VCE = 5V
IC[A], COLLECTOR CURRENT
B
10
1
0.1
IC = 10I
B
(sat), SATURATION VOLTAGE
BE
V
0.01
1E-3 0.01 0.1 1 10 100
IC[A], COLLECTOR CURRENT
0.01
(sat)[V], SATURATION VOLTAGE
CE
V
1E-3 0.01 0.1 1 10 100
0.001
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
12
10
8
6
4
[A], COLLECTOR CURRENT
2
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
100
IC MAX. (Pulsed*)
10
IC MAX. (DC)
1
0.1
*SINGLE NONREPETITIVE
[A], COLLECTOR CURRENT
C
I
PULSE TC=25[oC]
0.01
110100
10ms*
100ms*
DC
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
Page 3
Typical Characteristics
KSC5200
160
140
120
100
80
60
[W], POWER DISSIP AT ION
40
C
P
20
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
Page 4
Package Demensions
(8.30) (8.30)
(9.00)
20.00
±0.20
TO-264
(1.00)
(4.00)
±0.20
6.00
KSC5200
(2.00)
(9.00)
±0.20
1.50
4.90
(11.00)
±0.20
(R2.00)
(R1.00)
(7.00)
ø3.30
±0.20
(7.00)
(1.50) (1.50)
2.50
±0.20
3.00
1.00
5.45TYP
[5.45
±0.20
5.00
±0.20
3.50
±0.30
(1.50)
]
[5.45
(0.50)
(2.00)
±0.20
+0.25
–0.10
5.45TYP
±0.30
]
(0.15)
±0.10
2.50
(2.80)
±0.20
20.00
±0.50
20.00
0.60
+0.25
–0.10
(1.50)
2.80
±0.30
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H4
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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