Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D315
KMZ50
Magnetic field sensor
Preliminary specification
Supersedes data of 1996 Nov 15
File under Discrete Semiconductors, SC17
1998 Mar 24
Page 2
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ50
FEATURES
• High sensitivity
• Integrated set/reset coil.
APPLICATIONS
• Navigation
• Current and earth magnetic field measurement
• Traffic detection.
DESCRIPTION
The KMZ50 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. The sensor contains one magnetoresistive
Wheatstone bridge and integrated set/reset conductors.
With the integrated set/reset conductor the orientation of
sensitivity may be set or changed (flipped). A short current
pulse on this conductor is needed to recover (set) the
sensor after exposure to strong disturbing magnetic fields.
A negative current pulse will reset the sensor to reversed
sensitivity. By use of periodically alternated flipping pulses
and a lock-in amplifier, output will become independent of
sensor and amplifier offset.
PINNING
PIN SYMBOL DESCRIPTION
1 +I
2V
flip
CC
flip coil
bridge supply voltage
3 GND ground
4 n.c. not connected
5 n.c. not connected
6 −V
7+V
8 −I
handbook, halfpage
pin 1
index
O
O
flip
bridge output voltage
bridge output voltage
flip coil
H
58
41
MGD791
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC
S sensitivity (uncompensated) 12 16 −
V
offset
R
bridge
R
flip
I
flip (min)
t
flip (min)
bridge supply voltage − 58V
mV V⁄
----------------kA m⁄
offset voltage −1.5 − +1.5 mV/V
bridge resistance 1 − 3kΩ
flip coil resistance 1 3 5 Ω
minimum recommended flipping current; note 1 800 1000 1200 mA
minimum flip pulse duration; note 1 1 3 100 µs
Note
1. Average power consumption in flip conductor, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see “Limiting values”.
1998 Mar 24 2
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Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ50
CIRCUIT DIAGRAM
handbook, halfpage
−I
F
8765
Z
1
1234
+I
F
+V
V
CC
O
−V
GND
O
n.c.
MGD792
n.c.
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
CC
P
tot
T
stg
T
bridge
I
flip (max)
P
flip (max)
V
isol
bridge supply voltage − 9V
total power dissipation − 130 mW
storage temperature −65 +150 °C
bridge operating temperature −40 +125 °C
maximum flipping current − 1500 mA
maximum flipping power dissipation − 50 mW
voltage between isolated systems:
− 60 V
flip conductor - Wheatstone bridge
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient 155 K/W
1998 Mar 24 3
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Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ50
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
H
y
H
x
S sensitivity open circuit 12 16 −
TCV
R
bridge
TCR
V
offset
TCV
FH hysteresis of output voltage −−2 %FS
R
flip
I
flip
t
flip
R
isol
V
isol
f operating frequency 0 − 1 MHz
bridge supply voltage − 58V
operating range in sensitive
−0.2 −+0.2 kA/m
direction
operating range perpendicular to
−0.2 −+0.2 kA/m
sensitive direction
temperature coefficient of
O
output voltage
VCC=5V;
T
= −25 to +125 °C
amb
I
= 3 mA;
CC
T
= −25 to +125 °C
amb
−−0.4 − %/K
−−0.1 − %/K
bridge resistance resistance pins 2 to 3 1 − 3kΩ
temperature coefficient of
bridge
T
= −25 to +125 °C − 0.3 − %/K
bridge
bridge resistance
offset voltage −1.5 − +1.5 mV/V
temperature coefficient of offset
offset
T
= −25 to +125 °C −3 −+3
bridge
voltage
resistance of set/reset conductor resistance pins 1 to 8 1 3 5 Ω
recommended flipping current
current pins 1 to 8 ±800 ±1000 ±1200 mA
for stable operation
flip pulse duration 1 3 100 µs
isolating resistance resistance pins 1 to 2,
1 −−MΩ
1to4, 2to4
voltage between isolated
systems
voltage pins 1 to 2, 1 to 4,
2to4
−−50 V
mV V⁄
----------------kA m⁄
µ VV⁄
---------------
K
1998 Mar 24 4
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Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ50
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
D
c
y
Z
8
pin 1 index
1
e
5
A
2
A
4
w M
b
p
SOT96-1
E
H
E
1
L
detail X
A
X
v M
A
Q
(A )
L
p
A
3
θ
0 2.5 5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
OUTLINE
VERSION
SOT96-1
A
max.
1.75
0.069
A
1
0.25
0.10
0.010
0.004
A2A
1.45
1.25
0.057
0.049
IEC JEDEC EIAJ
076E03S MS-012AA
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.019
0.0100
0.014
0.0075
UNIT
inches
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
(1)E(2)
cD
5.0
4.8
0.20
0.19
REFERENCES
4.0
3.8
0.16
0.15
0.050
1998 Mar 24 5
eHELLpQZywv θ
1.27
6.2
5.8
0.244
0.228
1.05
1.0
0.4
0.039
0.016
0.7
0.6
0.028
0.024
0.25 0.10.25
0.010.010.041 0.004
EUROPEAN
PROJECTION
(1)
0.7
0.3
0.028
0.012
ISSUE DATE
95-02-04
97-05-22
o
8
o
0
Page 6
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ50
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 24 6
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Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ50
NOTES
1998 Mar 24 7
Page 8
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Printed in The Netherlands 115106/00/02/pp8 Date of release: 1998 Mar 24 Document order number: 9397 750 03594
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