Datasheet KMZ41 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D315M3D315

KMZ41

Magnetic field sensor

Preliminary specification
Supersedes data of 1998 Mar 26

2000 Apr 18

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

DESCRIPTION

The KMZ41 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges. Its properties enable this sensor to
be used in angle measurement applications under strong
field conditions. A rotating magnetic field
strength > 40 kA/m (recommended field
strength > 100 kA/m) in the x-y plane will deliver a
sinusoidal output signal. The sensor can be operated at
any frequency between DC and 1 MHz.

PINNING

PIN SYMBOL DESCRIPTION

1 −V
2 −V
3V
4V
5+V
6+V

O1

O2
CC2
CC1

O1

O2

output voltage bridge 1
output voltage bridge 2
supply voltage bridge 2
supply voltage bridge 1
output voltage bridge 1

output voltage bridge 2
7 GND2 ground 2
8 GND1 ground 1

handbook, halfpage

pin 1

index

Fig.1 Simplified outline SOT96-1.

58

x

y

41

MGD790

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC1

V

CC2

S sensitivity (α
R

bridge

V

offset1

V

offset2

bridge supply voltage − 59V
bridge supply voltage − 59V

=45°; α2=0°) 2.44 2.72 3.00 mV/°

1

bridge resistance 2 2.5 3 kΩ
offset voltage −2 − +2 mV/V
offset voltage −2 − +2 mV/V

2000 Apr 18 2

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

CIRCUIT DIAGRAM

handbook, halfpage

GND1

−V

O1

GND2

8765

1234

−V

O2

+V

V

O2

CC2

+V

V

O1

MGD789

CC1

Fig.2 Simplified circuit diagram.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

P

tot

T

stg

T

bridge

bridge supply voltage − 9V
total power dissipation − 90 mW
storage temperature −65 +150 °C
bridge operating temperature −40 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient 155 K/W

2000 Apr 18 3

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

CHARACTERISTICS

T

=25°C; H

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC1

V

CC2

bridge supply voltage − 59V
bridge supply voltage − 59V

S sensitivity open circuit, note 1;

V

peak 1

V

peak 2

TCV

peak voltage note 2; see Fig.4 70 78 86 mV
peak voltage note 2; see Fig.4 70 78 86 mV
temperature coefficient of

peak

peak voltage

R

bridge

TCR

bridge resistance note 4 2 2.5 3 kΩ
temperature coefficient of

bridge

bridge resistance

V

offset

TCV

offset voltage see Fig.4 −2 − +2 mV/V
temperature coefficient of

offset

offset voltage

∆V

offset

maximum change of offset
voltage within temperature
range

FH hysteresis of output voltage note 8 0 0.01 0.04 %FS
ω amplitude angular velocity note 9 0 25000 t.b.f °/s
k amplitude synchronism note 10 99.5 100 100.5 %
TCk temperature coefficient of

amplitude synchronism

∆α angular inaccuracy note 12 0 0.1 0.25 deg

rotation

= 100 kA/m; V

=5V; V

CC1

α =0° (bridge 2);
α =45° (bridge 1)

T

amb

note 3

T

bridge

note 5

T

bridge

note 6; see Fig.4
T

amb

note 7; see Fig.3
T

amb

note 7; see Fig.3

T

amb

note 11

= 5 V unless otherwise specified.

CC2

2.44 2.72 3.00 mV/°

= −40 to +150 °C;

= −40 to +150 °C

= −40 to +150 °C

= −40 to +100 °C;

= −40 to +150 °C;

= −40 to +150 °C

−0.25 −0.31 −0.37 %/K

0.3 0.32 0.34 %/K

−2 −+2

−0.2 0 +0.14 mV/V

−0.28 0 +0.22 mV/V

−0.002 0 0.002 %/K

µVV⁄

--------------­K

Notes

1. Sensitivity changes with angle due to sinusoidal output.

2. V

3. .

peak

TCV

= (V

peak

− V

out max

100=

offset

V

peak T2()Vpeak T1()

------------------------------------------------------­V

peak T1()T2T1

).

–

–()

Where T

40°CT2150°C=;–=

1

4. Bridge resistance between pins 8 and 4, pins 7 and 3, pins 5 and 1, pins 6 and 2.
R

5. .

TCR

bridge

6. .

TCV

7. ∆V

offset

offset

=(V

=

offset

bridge T2()Rbridge T1()

100=

-------------------------------------------------------------- -

R

bridge T1()T2T1

V

offset T2()Voffset T1()

--------------------------------------------------------­T

(T) − V

–

–
–()

2T1

(T = 25 °C).

offset

–()

Where T

Where T

1

40°CT2150°C=;–=

1

40°CT2150°C=;–=

2000 Apr 18 4

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

8.
FH

FH2100

=

1

=

V

O1 67.5°()135° 45°⇒

100

--------------------------------------------------------------------------------------------------------

V

O2 22.5°()90° 0°⇒

---------------------------------------------------------------------------------------------­2V

–

2V

×

peak1

V

–

×

peak2

V

O1 67.5°()45° 135°⇒

O2 22.5°()0°90°⇒

9. No change in VO; no distortion of sinusoidal output; tested up to 25000 °/s maximum.
V

10. .

11. .

12. ∆α = α

handbook, full pagewidth

peak1

k

----------------­V

peak2

TCk 100

=

real−αmeasured

100⋅=

–()

k

T2kT1

-------------------------------­k

–()

T1T2T1

 without offset voltage influences.

Where T

∆ V

offset

(mV/V)

+0.14

1

−2 µ V/V
K

40°CT2150°C=;–=

MGU174

+0.06

0

−0.12

−0.2

(1) 0 = initial offset voltage per supply voltage.
(2) Typical drift of the offset voltage per supply voltage remains inside shaded area of graph.

+2 µ V/V

K

−40

Fig.3 Supply voltage offset voltage as a function of temperature.

T (°C)

150700

2000 Apr 18 5

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

V

V

out max

(V)

out

V

O2

α = 0°

direction of

magnetic field

handbook, full pagewidth

V

peak 2

V

offset 2

−V

0

V

O1

0

90 180 360

270

α (deg)

−V

V
V

O1

O2
CC2
CC1

Fig.4 Output signals related to the direction of the magnetic field.

α

GND1
GND2
+V

O2

+V

O1

MGU175

2000 Apr 18 6

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

PACKAGE OUTLINE

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

y

Z

8

pin 1 index

1

D

c

5

A

2

A

1

4

e

w M

b

p

E

H

E

detail X

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT96-1

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.010

0.057

0.004

0.049

IEC JEDEC EIAJ

076E03 MS-012

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)E(2)

cD

5.0

4.8

0.20

0.19

REFERENCES

4.0

3.8

0.16

0.15

1.27

0.050

2000 Apr 18 7

eHELLpQZywv θ

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

6.2

5.8

0.244

0.228

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

97-05-22
99-12-27

o

8

o

0

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This datasheetcontains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditions above thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that suchapplications willbe
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result inpersonal injury.Philips
Semiconductorscustomersusing or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of theseproducts,conveys no licence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2000 Apr 18 8

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

NOTES

2000 Apr 18 9

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

NOTES

2000 Apr 18 10

Philips Semiconductors Preliminary specification

Magnetic field sensor KMZ41

NOTES

2000 Apr 18 11

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Printed in The Netherlands 603512/500/04/pp12 Date of release: 2000 Apr 18 Document order number: 9397 750 07014