Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
KMZ11B1
Magnetic field sensor
Preliminary specification
Supersedes data of 1996 Nov 08
File under Discrete Semiconductors, SC17
1996 Dec 11
Page 2
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ11B1
DESCRIPTION
The KMZ11B1 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for current and field
measurement, revolution counters, angular or linear
displacement sensors, proximity detectors, etc.
The sensor can be operated at any frequency between DC
and 1 MHz.
PINNING
PIN SYMBOL DESCRIPTION
1+V
O
output voltage
2 GND ground
3 −V
4V
O
CC
output voltage
supply voltage
5 to 8 n.c. not connected
handbook, halfpage
pin 1
index
Fig.1 Simplified outline.
58
H
y
H
x
41
MGD804
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC
H
y
H
x
S sensitivity − 4 −
R
bridge
V
offset
bridge supply voltage − 5 − V
magnetic field strength −2 − +2 kA/m
auxiliary field − 3 − kA/m
mV V⁄
----------------kA m⁄
bridge resistance 1.9 − 2.9 kΩ
offset voltage −1.5 − +1.5 mV/V
CIRCUIT DIAGRAM
handbook, full pagewidth
1
MLC716
432
+V
O
GND
Fig.2 Simplified circuit diagram.
1996 Dec 11 2
–V
V
O
CC
Page 3
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ11B1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
T
T
CC
tot
stg
bridge
bridge supply voltage − 12 V
total power dissipation up to T
= 130 °C − 120 mW
amb
storage temperature −65 +150 °C
bridge operating temperature −40 +150 °C
150
handbook, halfpage
P
tot
(mW)
100
50
0
0
50 100 150
T ( C)
amb
Fig.3 Power derating curve.
MSA927
o
1996 Dec 11 3
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Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ11B1
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
CHARACTERISTICS
=25°C; Hx= 3 kA/m, note 1; VCC= 5 V unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
H
y
S sensitivity open circuit 3.2 − 4.8
TCV
O
R
bridge
TCR
bridge
V
offset
TCV
offset
FL linearity deviation of output
FH hysteresis of output voltage −−1%⋅FS
f operating frequency 0 − 1 MHz
thermal resistance from junction to ambient 155 K/W
bridge supply voltage − 5 − V
magnetic field strength −2 −+2 kA/m
mV V⁄
----------------kA m⁄
temperature coefficient of
output voltage
VCC=5V;
T
= −25 to +125 °C
amb
= 3 mA;
I
CC
T
= −25 to +125 °C
amb
−−0.4 − %/K
−−0.1 − %/K
bridge resistance 1.9 − 2.9 kΩ
temperature coefficient of
T
= −25 to +125 °C − 0.3 − %/K
bridge
bridge resistance
offset voltage −1.5 − +1.5 mV/V
offset voltage drift T
voltage
= −25 to +125 °C −3 −+3
bridge
H
=0to±1 kA/m −−±0.5 %⋅FS
y
=0to±1.6 kA/m −−±1.7 %⋅FS
H
y
H
=0to±2 kA/m −−±4%⋅FS
y
µ VV⁄
---------------
K
Note
1. In applications with H
< 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field
x
Hx= 3 kA/m.
1996 Dec 11 4
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Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ11B1
area
(1)
Hx (kA/m)
MSA925
20
H
d
(kA/m)
10
Hy > 1 kA/m
(2)
0
In applications with Hx< 3kA/m, the sensor has to be reset,
after leaving the SOAR, by an auxiliary field of H
(1) Region of permissible operation.
(2) Permissible extension if Hy< 1 kA/m.
H
x
H
H
d
05
1234
y
Hy > 1 kA/m
safe operating
= 3 kA/m.
x
Fig.4 Safe Operating Area (permissible disturbing
field Hd as a component of auxiliary field Hx).
2
S
(Hx)
S
(3 kA/m)
1
0
05
In applications with Hx≤ 3 kA/m, the sensor has to be
reset by an auxiliary field of H
1234
= 3 kA/m before use.
x
MSA924
Hx (kA/m)
Fig.5 Relative sensitivity (ratio of sensitivity at
certain Hx and sensitivity at Hx = 3 kA/m).
8
V
o
(mV/V)
4
0
4
8
21
Hx= 3 kA/m; T
Fig.6 Sensor output characteristics.
amb
=25°C; V
MSA926
max
typ
min
012
=0.
offset
H (kA/m)
y
APPLICATION INFORMATION
The leadframe material is a copper alloy containing 2%
iron. In applications with magnetic fields outside the
specified operating range an increasing hysteresis effect
will arise due to magnetization effects in the leadframe.
However, in angular measurement applications of the
KMZ11B1 in combination with strong magnetic fields
H > 50 kA/m there is no additional hysteresis present.
1996 Dec 11 5
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Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ11B1
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
D
c
y
Z
8
pin 1 index
1
e
5
A
2
A
4
w M
b
p
SOT96-1
E
H
E
1
L
detail X
A
X
v M
A
Q
(A )
L
p
A
3
θ
0 2.5 5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
mm
inches
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
A
max.
1.75
0.069
OUTLINE
VERSION
SOT96-1
A1A2A
0.25
1.45
0.10
1.25
0.010
0.057
0.004
0.049
IEC JEDEC EIAJ
076E03S MS-012AA
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.019
0.0100
0.014
0.0075
(1)E(2)
cD
5.0
4.8
0.20
0.19
REFERENCES
4.0
3.8
0.16
0.15
0.050
1996 Dec 11 6
eHELLpQZywv θ
1.27
6.2
5.8
0.244
0.228
1.05
1.0
0.4
0.039
0.016
0.7
0.6
0.028
0.024
0.25 0.10.25
0.010.010.041 0.004
EUROPEAN
PROJECTION
(1)
0.7
0.3
0.028
0.012
ISSUE DATE
95-02-04
97-05-22
o
8
o
0
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Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ11B1
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 11 7
Page 8
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Printed in The Netherlands 147021/00/03/pp8 Date of release: 1996 Dec11 Document order number: 9397 75001582
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