Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D329
KMZ10A1
Magnetic field sensor
Product specification
Supersedes data of 1996 Nov 14
File under Discrete Semiconductors, SC17
1998 Apr 06
Page 2
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
DESCRIPTION
The KMZ10A1 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications such as navigation, current and
earth magnetic field measurement etc. The special
arrangement of the sensing chip allows the construction of
coils for switching the auxiliary field (Hx) along the length
axis of the sensor. The sensor can be operated at any
frequency between DC and 1 MHz.
H
handbook, halfpage
y
H
x
PINNING
1234
MGL420
PIN SYMBOL DESCRIPTION
1+V
O
output voltage
2 GND ground
3 −V
4V
O
CC
output voltage
supply voltage
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC
H
y
H
x
S sensitivity − 14 −
S
s
R
bridge
V
offset
DC supply voltage − 5 − V
magnetic field strength −0.5 − +0.5 kA/m
auxiliary field − 0.5 − kA/m
mV V⁄
----------------kA m⁄
sensitivity (with switched Hx) − 22 −
mV V⁄
----------------kA m⁄
bridge resistance 0.85 − 1.75 kΩ
offset voltage −1.5 − +1.5 mV/V
CIRCUIT DIAGRAM
handbook, full pagewidth
1
+V
O
GND
Fig.2 Simplified circuit diagram.
1998 Apr 06 2
–V
MLC716
432
V
O
CC
Page 3
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
P
tot
T
stg
T
bridge
DC supply voltage − 9V
total power dissipation up to T
= 132 °C − 100 mW
amb
storage temperature −65 +150 °C
bridge operating temperature −40 +150 °C
150
handbook, halfpage
P
tot
(mW)
100
50
0
0
50 100 150
T ( C)
amb
Fig.3 Power derating curve.
MSA927
o
1998 Apr 06 3
Page 4
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
CHARACTERISTICS
=25°C and Hx= 0.5 kA/m unless otherwise specified; see notes 1 and 2.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
H
y
S sensitivity open circuit;
TCV
O
VCV
O
R
bridge
TCR
bridge
V
offset
TCV
offset
FL linearity deviation of output voltage H
FH hysteresis of output voltage −−0.5 %⋅FS
f operating frequency 0 − 1 MHz
thermal resistance from junction to ambient 180 K/W
DC supply voltage − 5 − V
operating range note 2 −0.5 −+0.5 kA/m
temperature coefficient of output
voltage at constant supply voltage
temperature coefficient of output
voltage at constant supply current
notes 2 and 3
VCC=5V;
T
= −25 to +125 °C
amb
IB= 3 mA;
T
= −25 to +125 °C
amb
11 − 17
−−0.4 − %/K
−−0.15 − %/K
mV V⁄
----------------kA m⁄
bridge resistance 0.85 − 1.75 kΩ
temperature coefficient of bridge
Tj= −25 to +125 °C − 0.25 − %/K
resistance
offset voltage −1.5 − +1.5 mV/V
offset voltage drift T
= −25 to +125 °C −6 −+6
bridge
=0to±0.25 kA/m
y
=0to±0.4 kA/m
H
y
H
=0to±0.5 kA/m
y
−1
−−0.8 %⋅FS
−1
−1
−−2.5 %⋅FS
−−4.0 %⋅FS
µ VV⁄
---------------
K
Characteristics with H
H
S
y
s
operating range note 2 −0.05 −+0.05 kA/m
sensitivity slope between Hy=0
= 0 (switched Hx, see note 4); VCC=5V
x
and Hy= 40 A/m
14 − 27
mV V⁄
----------------kA m⁄
Notes
1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an
auxiliary field H
2. No disturbing field (H
= 3 kA/m.
x
) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
d
decrease of sensitivity.
3. Sensitivity measured as ∆V
/∆Hy between Hy= 0 and Hy= 0.4 kA/m.
O
4. See application information.
1998 Apr 06 4
Page 5
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
SOAR
I
3
Hx (kA/m)
= 3 kA/m.
MGD807
12
handbook, halfpage
H
d
(kA/m)
8
4
0
I =Region of permissible operation.
II = Permissible extension if Hy< 0.05 kA/m.
In applications with Hx< 3 kA/m, the sensor has to be reset, after
leaving the SOAR, by an auxiliary field of H
H
y
H
H
d
x
II
012 4
II
x
Fig.4 Safe Operating Area (permissible disturbing
field Hd as a component of auxiliary field Hx).
handbook, halfpage
1.2
S
(H )
x
S
(0.5 kA/m)
0.8
0.4
0
05
In applications with Hx≤ 3 kA/m, the sensor has to be
reset by an auxiliary field of H
1234
= 3 kA/m before use.
x
H (kA/m)
x
Fig.5 Relative sensitivity (ratio of sensitivity at
certain Hx and sensitivity at Hx= 0.5 kA/m).
MLC120
10
handbook, halfpage
V
O
(mV/V)
6
2
0
–2
–6
–10
–0.5 0.5
Hx= 0.5 kA/m; T
–0.3 –0.1 0.1 0.3
=25°C; V
amb
0
= 0; S = ∆VO/ ∆Hy.
offset
Fig.6 Sensor output characteristics.
∆ H
y
MEA558
Hy (kA/m)
∆ V
1.2
handbook, halfpage
V
O
(mV/V)
0.8
O
0.4
0
–0.4
–0.8
–1.2
–50
(1) Sensor reset with Hx= 3 kA/m.
(2) Sensor reset with Hx= −3 kA/m.
–30 50
–10 10 30
(1)
(2)
0
MEA557
Hy (A/m)
Fig.7 Output characteristic with Hx=0
(switched Hx).
1998 Apr 06 5
Page 6
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
APPLICATION INFORMATION
A problem with measuring weak magnetic fields is that precision is limited by drift in both the sensor and amplifier offset.
In these instances, it is possible to take advantage of the ‘flipping’ characteristics of the KMZ10 series to generate an
output that is independent of offset. The sensor, located in a coil connected to a current pulse generator producing
magnetic field pulses periodically reversed by alternate positive and negative going current pulses, is continually flipped
from its normal to its reversed polarity and back again. The polarity of the offset however, remains unchanged, so the
offset itself can be eliminated by passing the output signal through a filter circuit.
handbook, full pagewidth
1234
V
o
H
(a)
sensor
coil
V
o
M
x
offset
M
x
H
y
x
H
y
(c)
polarizationcurrent
offset
time
(b)
MBC925
(a) Set-up.
(b) Pulse diagram.
(c) Sensor output characteristics.
Fig.8 Measuring weak magnetic fields with the KMZ10A1.
1998 Apr 06 6
Page 7
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
PACKAGE OUTLINE
Plastic single-ended flat package; 4 in-line leads SOT195
E
Q
b
1
A
D
L
chip
L
1
1234
e
1
e
DIMENSIONS (mm are the original dimensions)
UNIT b
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
AD
p
0.48
1.8
mm
OUTLINE
VERSION
SOT195 97-06-02
1.6
0.40
c
b
1
0.7
0.45
0.5
0.39
IEC JEDEC EIAJ
5.2
5.0
E
4.8
4.4
REFERENCES
b
p
0 1 4 mm
scale
e
e
3.75
1.25
L
1
14.5
12.7
L
1
max.
2
c
(1)
Q
0.8
0.7
EUROPEAN
PROJECTION
ISSUE DATE
1998 Apr 06 7
Page 8
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Apr 06 8
Page 9
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
NOTES
1998 Apr 06 9
Page 10
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
NOTES
1998 Apr 06 10
Page 11
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A1
NOTES
1998 Apr 06 11
Page 12
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© Philips Electronics N.V. 1998 SCA59
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Printed in The Netherlands 115106/00/03/pp12 Date of release: 1998 Apr 06 Document order number: 9397 750 03712
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