Datasheet KA3S0680RFB Datasheet (Fairchild Semiconductor)

Page 1
KA3S0680RB/KA3S0680RFB
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Wide operatimg frequency range up to (150kHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protecton (Min. 23V)
• Under voltage lockout
• Internal high voltage sense FET
• External sync terminal
• Auto Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal extern al components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. controller IC features a trimmed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or R
switching converter solution, a Fairchild Power
CC
Switch(FPS) can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective C-TV power supply.
TO-3P-5L
1
1.DRAIN 2.GND 3.V
TO-3PF-5L
1
4.FB 5.Sync
CC
Internal Block Diagram
#3 V
CC
32V
#5 Sync
5V
#4 FB
©2001 Fairchild Semiconductor Corporation
µ
2
7.5V
25V
A
1mA
+
6.4V
2.5R 1R
9V
+
+
Thermal S/D
OVER VOLTAGE S/D
OSC
+
5V
Vref
L.E.B
0.1V
Good
logic
S R
Internal
bias
Q
S R
Power on reset
#1 DRAIN
SFET
Q
#2 GND
Rev.1.0.2
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KA3S0680RB/KA3S0680RFB
Absolute Maximum Ratings
Characteristic Symbol Value Unit
GS
(1)
=1MΩ)
Maximum Drain voltage Drain Gate voltage (R Gate source (GND) voltage Drain current pulsed Single pulsed avalanche energy Continuous drain current (T
(2)
=25°C)
C
(3)
Continuous drain current (TC=100°C) Maximum supply voltage Input voltage range
Total power dissipation
Operating ambient temperature Storage temperature
Note:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25 °C
V
D,MAX
V
DGR
V
I
DM
E
I I
V
CC,MAX
V
(watt H/S)
P
D
Derating
T
T
STG
GS
AS
D D
FB
A
800 V 800 V ±30 V
24.0 A
DC
455 mJ
6.0 A
4.0 A
DC DC
30 V
0.3 to V
SD
V
150 W
1.21 W/°C
25 to +85 °C
55 to +150 °C
2
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KA3S0680RB/KA3S0680RFB
Electrical Characteristics (SFET part)
(Ta = 25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
Drain source breakdown voltage BV
Zero gate voltage drain current I
Static drain source on resistance Forward transconductance
(note)
(note)
DSS
DSS
R
DS(ON)
gfs V
Input capacitance Ciss
Reverse transfer capacitance Crss - 42 ­Turn on delay time t
d(on)
Rise time tr - 150 ­Turn off delay time t
d(off)
Fall time tf - 130 ­Total gate charge
(gate-source+gate-drain)
Qg
Gate source charge Qgs - 16 ­Gate drain (Miller) charge Qgd - 27 -
V
= 0V, ID = 50µA 800 - - V
GS
V
= Max., Rating,
DS
V
= 0V
GS
= 0.8Max., Rating,
V
DS
V
= 0V, TC = 125°C
GS
V
= 10V, ID = 4.0A - 1.6 2.0 W
GS
= 15V, ID = 4.0A 1.5 2.5 - S
DS
V
GS
= 0V, V
DS
= 25V,
--50µA
- - 200 mA
- 1600 -
f = 1MHz VDD= 0.5BV
DSS
, ID= 6.0A
-60­(MOSFET switching time are essentially independent of
- 300 ­operating temperature)
=10V, ID = 6.0A,
V V
GS DS
= 0.5BV
(MOSFET
DSS
-70­switching time are
essentially independent of operating temperature)
pFOutput capacitance Coss - 140 -
nS
nC
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S
--- -=
R
3
Page 4
KA3S0680RB/KA3S0680RFB
Electrical Charcteristics (SFET par t) (Continued)
(Ta = 25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage V Stop operating voltage V
START
STOP
OSCILLATOR SECTION
Initial accuracy F Frequency change with temperature
(2)
Maximum duty cycle D
OSC
F/T 25°C Ta +85°C-±5 ±10 %
MAX
FEEDBACK SECTION
Feedback source current I Shutdown Feedback voltage V Shutdown delay current I
FB
SD
delay
SYNC. & SOFT START SECTION
Soft start voltage V Soft start current I Sync threshold voltage
(3)
V
SYTH
SS
SS
REFERENCE SECTION
Output voltage
(1)
Temperature Stability
(1)(2)
Vref Ta = 25°C 4.80 5.00 5.20 V
Vref/∆T 25°C ≤ Ta +85°C-0.30.6mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit I
OVER
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
Over voltage protection voltage V
T
SD
OVP
TOTAL DEVICE SECTION
Start Up current I Operating supply current
(control part only) V
zener voltage V
CC
START
I
OP
Z
After turn on 9 10 11 V
Ta = 25°C182022kHz
Ta = 25°C, Vfb = GND 0.7 0.9 1.1 mA
Ta = 25°C, 5V Vfb ≤V
V
= 2V 4.7 5.0 5.3 V
FB
Sync & S/S = GND 0.8 1.0 1.2 mA Vfb = 5V 6.0 6.4 6.8 V
Max. inductor current 3.52 4.00 4.48 A
V
= 14V 0.1 0.3 0.55 mA
CC
Ta = 25°C 6 12 18 mA I
= 20mA 30 32.5 35 V
CC
-141516V
-929598%
- 6.9 7.5 8.1 V
- 140 160 - °C
-232528V
SD
1.4 1.8 2.2 µA
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3.The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.
4
Page 5
Typical Performance Characteristics (control part)
(These characteristic graphs are normalized at Ta = 25°C)
KA3S0680RB/KA3S0680RFB
Fig.1 O per at ing Fr eque nc y
1.2
1.15
1.1
1.05
Fosc
1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
Figure 1. Operating Frequency Figure 2. Feedback Source Current
1.2
1.15
1.1
1.05
Iop
0.95
0.9
0.85
0.8
Fig.3 Operating Cur rent
1
-25 0 25 50 75 100 125 150
Temperature [
Fig.2 Feedback Sourc e Current
1.2
1.15
1.1
1.05
Ifb
1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
1.1
1.05
Ipeak
I
over
0.95
0.9
0.85
0.8
] Temperature [
C
°
Fig.4 Max Inductor Current
1
-25 0 25 50 75 100 125 150
]
C
°
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Fig.5 Start up Current
-25 0 25 50 75 100 125 150
Istart
1.5
1.3
1.1
0.9
0.7
0.5
Vstart
Fig.6 Star t Threshold Voltage
1.15
1.1
1.05 1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Temperature [°
Figure 5. Start up Current Figure 6. Start Threshold Voltage
]Temperature [°C]
C
5
Page 6
KA3S0680RB/KA3S0680RFB
Typical Performance Characteristics (continued)
(These characteristic graphs are normalized at Ta = 25°C)
V
th(H)
Vstop
Fig.7 Stop Threshold Voltage
1.15
1.1
1.05 1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Dmax
F i g .8 Maxi mum D u ty Cycl e
1.15
1.1
1.05 1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
1.2
1.15
1.1
1.05
Vz
0.95
0.9
0.85
0.8
Fig.9 V c c Zener Voltage
1
-25 0 25 50 75 100 125 150
Temperature [°
C
] Temperature [°C]
Fig.10 Shut do wn Feedback Voltage
1.15
1.1
1.05
Vsd
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Idelay
Figure 9. V
Fig.11 Shut do wn Delay Current
1.2
1.15
1.1
1.05 1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
Zener Voltage Figure 10. Shutdown Feedback Voltage
CC
Fig.12 Over Voltage Prot ec tion
1.15
1.1
1.05
Vovp
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Temperature [°
]Temperature [°C]
C
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
6
Page 7
Typical Performance Characteristics (continued)
(These characteristic graphs are normalized at Ta = 25°C)
KA3S0680RB/KA3S0680RFB
1.15
1.1
1.05 1
Vss
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Figure13. Soft Start Voltage
Fig.13 Soft Start Voltage
Fig.14 Drain Sour c e Turn-on
Resistance
2.5 2
1.5
(
)
Rdson
1
0.5 0
-25 0 25 50 75 100 125 150
Figure 14. Static Drain-Source on Resistance
7
Page 8
KA3S0680RB/KA3S0680RFB
Package Dimensions
TO-3P-5L
8
Page 9
KA3S0680RB/KA3S0680RFB
Package Dimensions
TO-3P-5L (Forming)
(Continued)
9
Page 10
KA3S0680RB/KA3S0680RFB
Package Dimensions
(Continued)
TO-3PF-5L
10
Page 11
KA3S0680RB/KA3S0680RFB
Package Dimensions
(Continued)
TO-3PF-5L(Forming)
11
Page 12
KA3S0680RB/KA3S0680RFB
Ordering Information
Product Number Package Operating Temperature
KA3S0680RB-TU TO-3P-5L KA3S0680RB-YDTU TO-3P-5L(Forming)
-25°C to +85°C
KA3S0680RFB-TU TO-3PF-5L KA3S0680RFB-YDTU TO-3PF-5L(Forming)
TU : Non Forming Type YDTU : Forming Type
-25°C to +85°C
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURT HER NOTICE TO ANY PRODUCTS HEREI N TO IMPROVE RELIABILITY, FUNCTIO N OR DESIGN. FAIRCH IL D DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHE RS.
LIFE SUPPORT POL I CY
FAIRCHILD’S PR ODUCTS ARE NOT AUTH ORIZED FOR USE AS C RITICAL COMPONENT S IN LIFE SUPPORT DE VICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein :
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
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2. A critical component in any component of a life support device or sy stem whose fai lure to perform can be reasonably expec ted to cause the failur e of the life support device or system, or to affect its safety or effec t iv ene ss .
10/17/01 0.0m 001
2001 Fairchild Semiconductor Corporation
Stock#DSxxxxxxxx
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