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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C 100 V
V
DGR
TJ= 25°C to 150°C; RGS = 1 MΩ 100 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
TC= 25°C 67N10 67 A
75N10 75 A
I
DM
TC= 25°C, pulse width limited by T
JM
67N10 268 A
75N10 300 A
P
D
TC= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
MegaMOSTMFET
N-Channel Enhancement Mode
TO-204 AE (IXTM)
V
DSS
I
D25
R
DS(on)
IXTH / IXTM 67N10 100 V 67 A 25 m
ΩΩ
ΩΩ
Ω
IXTH / IXTM 75N10 100 V 75 A 20 m
ΩΩ
ΩΩ
Ω
G = Gate, D = Drain,
S = Source, TAB = Drain
D
G
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS= 0 V, ID = 250 µA 100 V
V
GS(th)
VDS= VGS, ID = 250 µA24V
I
GSS
VGS= ±20 VDC, VDS = 0 ±100 nA
I
DSS
VDS= 0.8 • V
DSS
TJ = 25°C 200 µA
VGS= 0 V TJ = 125°C1mA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
67N10 0.025 Ω
75N10 0.020 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
l
International standard packages
l
Low R
DS (on)
HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
91533E(5/96)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Page 2
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
VDS= 10 V; ID = 0.5 I
D25
, pulse test 25 30 S
C
iss
4500 pF
C
oss
VGS= 0 V, VDS = 25 V, f = 1 MHz 1300 pF
C
rss
550 pF
t
d(on)
40 60 ns
t
r
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
60 110 ns
t
d(off)
RG = 2 Ω, (External) 100 140 ns
t
f
30 60 ns
Q
g(on)
180 260 nC
Q
gs
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
30 70 nC
Q
gd
90 160 nC
R
thJC
0.42 K/W
R
thCK
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 67N10 67 A
75N10 75 A
I
SM
Repetitive; 67N10 268 A
pulse width limited by T
JM
75N10 300 A
V
SD
IF = IS, VGS = 0 V, 1.75 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 300 ns
IXTH 67N10 IXTH 75N10
IXTM 67N10 IXTM 75N10
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD (IXTH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 1.53 3.42 .060 .135
∅b 1.45 1.60 .057 .063
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 11.18 12.19 .440 .480
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 12.58 13.33 .495 .525
R1 3.33 4.77 .131 .188
s 16.64 17.14 .655 .675
TO-204AE (IXTM) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Pins 1 - Gate 2 - Source
Case - Drain
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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© 2000 IXYS All rights reserved
IXTH 67N10 IXTH 75N10
IXTM 67N10 IXTM 75N10
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
20
40
60
80
75N10
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Norm alized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 20 40 60 80 100 120 140 160
R
DS(on)
- Norm alized
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VGS = 10V
V
GS
= 15V
VGS - Volts
012345678910
I
D
- Amperes
0
25
50
75
100
125
150
TJ = 125°C
VDS - Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
- Amperes
0
50
100
150
200
8V
5V
V
GS
= 10V
9V
7V
6V
T
J
= 25°C
I
D
= 37.5A
67N10
BV
DSS
TJ = 25°C
TJ = 25°C
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
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© 2000 IXYS All rights reserved
IXTH 67N10 IXTH 75N10
IXTM 67N10 IXTM 75N10
VDS - Volts
110100
I
D
- Amperes
1
10
100
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
VSD - Volt
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
S
- Amperes
0
25
50
75
100
125
150
VDS - Volts
0 5 10 15 20 25
Capacitance - pF
0
1000
2000
3000
4000
5000
6000
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
Single pulse
C
oss
C
iss
10µs
100µs
1ms
10ms
100ms
V
DS
= 50V
I
D
= 37.5A
I
G
= 1mA
Limited by R
DS(on)
C
rss
TJ = 125°C
TJ = 25°C
D=0.01
f = 1MHz
V
DS
= 25V
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
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