Page 1
High Current
MegaMOS
N-Channel Enhancement Mode
Preliminary data
TM
FET
IXTK 33N50 V
I
R
DSS
D (cont)
DS(on)
= 500 V
= 33 A
= 0.17
ΩΩ
Ω
ΩΩ
Symbol Test conditions Maximum ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
d Mounting torque 1.13/10 Nm/lb.in.
M
TJ= 25°C to 150°C 50 0 V
TJ= 25°C to 150°C; R
= 1.0 MΩ 500 V
GS
Continuous ±20 V
Transient ±30 V
TC= 25°C 33 A
TC= 25°C, pulse width limited by T
JM
132 A
TC= 25°C 416 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Weight 10 g
Max lead temperature for soldering 30 0 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
= 25°C unless otherwise specified) Min. Typ. Max.
(T
J
V
V
I
I
R
GSS
DSS
DSS
GS(th)
DS(on)
VGS= 0 V, ID = 5 mA 500 V
temperature coefficient 0.087 %/K
BV
DSS
VDS= V
V
GS(th)
, I
= 250 µA 2.0 4.0 V
GS
D
temperature coefficient -0.25 %/K
VGS= ±20 V DC, VDS = 0 ±100 nA
VDS= 0.8 V
V
GS
VGS= 10 V, I
DSS
= 0 V TJ = 125°C 3 mA
= 0.5 I
D
D25
TJ = 25°C 200 µA
0.17 Ω
TO-264 AA
G
D
S
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
• Low R
• Rugged polysilicon gate cell
HDMOSTM process
DS (on)
structure
• International standard package
• Fast switching times
Applications
• Motor controls
• DC choppers
• Uninterruptable Power Supplies
(UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95513C (4/97)
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Page 2
IXTK 33N50
Symbol Test Conditions Characteristic values
= 25°C unless otherwise specified) Min. Typ. Max.
(T
J
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 24 S
D25
4900 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 69 0 pF
300 pF
53 ns
V
= 10 V, V
GS
= 0.5 V
DS
, ID = 0.5 I
DSS
D25
30 ns
RG = 1 Ω (External) 14 0 ns
40 ns
250 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
30 nC
115 nC
0.15 K/W
0.30 K/W
Source-Drain Diode Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
I
S
I
SM
V
SD
VGS= 0 V 33 A
Repetitive; pulse width limited by T
IF = IS, V
= 0 V, 1.5 V
GS
JM
132 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 8 5 0 ns
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2 - 4
Page 3
IXTK 33N50
80
T
= 25°C
J
70
60
V
= 10 V
GS
9 V
8 V
7V
50
40
- Amperes
30
D
I
20
6V
5V
50
T
40
= 125°C
J
V
= 10 V
GS
9 V
8 V
7 V
30
20
- Amperes
D
I
10
10
0
0 4 8 12 16 20
VDS - Volts
0
048121620
VDS - Volts
Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC
3.0
2.8
V
= 10 V
GS
2.6
2.4
TJ = 125°C
2.2
2.0
1.8
- Normalized
1.6
1.4
DS(ON)
R
1.2
= 25°C
T
J
1.0
0.8
0 1020304050607080
5.5
= 10 V
V
GS
5.0
4.5
4.0
I
D
= 33 A
3.5
3.0
- Normalized
2.5
DS(ON)
2.0
R
ID = 16.5 A
1.5
1.0
25 50 75 100 125 150
6V
5V
ID - Amperes
Figure 3. R
40
35
30
25
20
- Amperes
15
D
I
10
5
0
normalized to 16.5A/25OC vs. I
DS(on)
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
Figure 5. Drain Current vs. Case Temperature
TJ - Degrees C
D
Figure 4. R
normalized to 16.5A/25OC vs. T
DS(on)
J
50
40
30
20
- Amperes
D
I
= 125oC
T
J
10
TJ = 25oC
0
2345678
VGS - Volts
Figure 6. Admittance Curves
© 2000 IXYS All rights reserved
3 - 4
Page 4
IXTK 33N50
14
V
= 300 V
Vds=300V
12
10
ds
I
I
I
I
=30A
= 33 A
D
D
=10mA
= 10 mA
G
G
8
- Volts
6
GS
V
4
2
0
0 50 100 150 200 250 300
Gate Charge - nC
Capacitance - pF
4500
4000
3500
C
iss
3000
2500
2000
1500
1000
C
oss
C
rss
500
0
0 5 10 15 20 25
VDS - Volts
Figure 7. Gate Charge Figure 8. Capacitance Curves
100
100
80
60
40
- Amperes
D
I
TJ = 125°C
20
T
= 25°C
J
0
0.4 0.6 0.8 1.0 1.2
VSD - Volts
Figure 9. Source Current vs. Source-toDrain Voltage
1.00
10
- Amperes
D
I
TC = 25°C
1
0.1
10 100
V
Figure 10. Forward Biased SOA
DS
- Volts
F = 1MHz
F = 1 MHz
1 ms
10 ms
100 ms
DC
500
- K/W
0.10
JC
R(th)
0.01
0.001 0.01 0.1 1 10
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
Single Pulse
Pulse Width - Seconds
4 - 4
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