Page 1
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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C 1000 V
V
DGR
TJ= 25°C to 150°C; RGS = 1 MΩ 1000 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
TC= 25°C2A
I
DM
TC= 25°C, pulse width limited by T
JM
8A
P
D
TC= 25°C 100 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 4 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
High Voltage
MOSFET
N-Channel Enhancement Mode
IXT A 2N100
IXTP 2N100
G = Gate, D = Drain,
S = Source, TAB = Drain
D (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS= 0 V, ID = 250 µA 1000 V
V
GS(th)
VDS= VGS, ID = 250 µA 2 4.5 V
I
GSS
VGS= ±20 VDC, VDS = 0 ±100 nA
I
DSS
VDS= 0.8 • V
DSS
TJ = 25°C 200 µA
VGS= 0 V TJ = 125°C1mA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
7.0 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
97540A(5/98)
G
D
S
TO-220AB (IXTP)
V
DSS
= 1000 V
I
D25
= 2 A
R
DS(on)
= 7
ΩΩ
ΩΩ
Ω
TO-263 AA (IXTA)
Features
International standard packages
Low R
DS (on)
HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
Advantages
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
G
S
D (TAB)
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
VDS= 10 V; ID = 0.5 • I
D25
, pulse test 1. 5 2.2 S
C
iss
825 pF
C
oss
VGS= 0 V, VDS = 25 V, f = 1 MHz 58 pF
C
rss
15 pF
t
d(on)
15 30 ns
t
r
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
15 35 ns
t
d(off)
RG = 20 Ω, (External) 60 80 ns
t
f
30 55 ns
Q
g(on)
40 nC
Q
gs
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
10 nC
Q
gd
15 nC
R
thJC
1.25 K/W
R
thCK
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 2 A
I
SM
Repetitive; pulse width limited by T
JM
8A
V
SD
IF = IS, VGS = 0 V, 1. 5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 1000 ns
IXTA2N100
IXTP2N100
TO-220 AB Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 SMD Outline
Pins: 1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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© 2000 IXYS All rights reserved
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Volts
0 5 10 15 20 25 30
I
D
- Amperes
0
1
2
3
0246810
I
D
- Amperes
0.0
0.5
1.0
1.5
2.0
TJ - Degrees C
25 50 75 100 125 150
R
DS(ON)
- Normalized
0
1
2
3
4
ID= 1 A
ID - Amperes
01234
R
DS(ON)
- Normalized
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Volts
0 5 10 15 20 25 30
I
D
- Amperes
0
1
2
3
4
5V
V
GS
= 10V
V
GS
=10V
9V
8V
7V
T
J
=125OC
V
GS
=10V
TJ=25OC
6V
5V
TJ = 25oC
I
D
= 2 A
TJ = 25OC
T
J
= 125oC
VGS=10V
9V
8V
7V
6V
T
J
= 125OC
Figure 2. Output Characteristics at 125OC
Figure 1. Output Characteristics at 25OC
Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value
Figure 4. R
DS(on)
normalized to 0.5 I
D25
value
IXTA2N100
IXTP2N100
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© 2000 IXYS All rights reserved
V
DS
- Volts
1 10 100 1 000
I
D
- Amperes
0.01
0.1
1
10
100
VDS - Volts
0 10203040
Capacitance - pF
1
10
100
1000
10000
VSD - Volts
0.2 0.4 0.6 0.8 1.0 1.2
I
D
- Amperes
0
1
2
3
4
5
Gate Charge - nC
0 10203040
V
GS
- Volts
0
2
4
6
8
10
12
Crss
Coss
Ciss
Vds= 500V
I
D
= 1A
I
G
= 1mA
f = 1MHz
2
TC = 25OC
10 ms
1 ms
100 ms
DC
T
J
= 125OC
T
J
= 25OC
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.5
D=0.1
D=0.05
D=0.01
Single pulse
D = Duty Cycle
D=0.2
D=0.02
Figure 8. Capacitance Curves
Figure 7. Gate Charge
Figure 9. Source Current vs. Source to Drain Voltage
Figure 11. Transient Thermal Resistance
Figure10. Forward Bias Safe Operating Area
IXTA2N100
IXTP2N100
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