Datasheet IXTH 30N60P, IXTQ 30N60P, IXTT 30N60P, IXTV 30N60P, IXTV 30N60PS Datasheet (IXYS)
Page 1
查询IXTT30N60P供应商查询IXTT30N60P供应商
PolarHV
TM
Power MOSFET
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
N-Channel Enhancement Mode
Avalanche Rated
IXTV 30N60P
IXTV 30N60PS
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight TO-247 6.0 g
TJ= 25° C to 150° C 600 V
TJ= 25° C to 150° C; RGS = 1 MΩ 600 V
Continuous ±30 V
Transient ±40 V
TC= 25° C30A
TC= 25° C, pulse width limited by T
TC= 25° C30A
TC= 25° C50mJ
TC= 25° C 1.5 J
TJ≤ 150° C, RG = 4 Ω
TC= 25° C 540 W
1.6 mm (0.062 in.) from case for 10 s 300 ° C
Plastic body for 10 s 260 ° C
Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in.
Mounting force (PLUS220) 11..65/2.5..15 N/lb.
TO-3P 5.5 g
PLUS220 4.0 g
TO-268 5.0 g
JM
, 10 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
80 A
150 °C
V
DSS
I
D25
R
DS(on)
TO-247 (IXTH)
G
TO-3P (IXTQ)
G
D
TO-268 (IXTT)
PLUS220 (IXTV)
G
PLUS220 (IXTV...S)
= 600 V
=30 A
≤≤
≤ 240 m
≤≤
D
S
S
G
S
D
S
D (TAB)
D (TAB)
D (TAB)
ΩΩ
Ω
ΩΩ
D (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 0 V, ID = 250 µA 600 V
VDS= VGS, ID = 250µA 3.0 5.0 V
VGS= ±30 V, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125° C 250 µA
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
D25
25 µA
240 m Ω
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G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
l
Fast Recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
International standard packages
l
Low package inductance
- easy to drive and to protect
D (TAB)
DS99251E(12/05)
Page 2
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = 0.5 I
, pulse test 22 25 S
D25
5050 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 540 pF
53 pF
29 ns
VGS= 10 V, VDS = 0.5 I
D25
20 ns
RG= 4 Ω (External) 80 ns
25 ns
82 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
28 nC
30 nC
0.23 ° C/W
0.21 ° C/W
Source-Drain Diode Characteristic Values
(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 30 A
Repetitive 80 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
Fig. 1. Output Char acte ris tics
30
27
24
21
18
15
- Amperes
12
D
I
9
6
3
0
012345678
V
D S
IF = 25A, -di/dt = 100 A/µs 500 ns
VR = 100V 4.0 µC
Fig. 2. Exte nde d Output Characte r istics
@ 25
V
= 10V
GS
8V
7V
- Volts
º
C
60
V
GS
8V
7V
6.5V
6V
5.5V
5V
55
50
45
40
35
30
25
- Amperes
D
20
I
15
10
5
0
0 3 6 9 12 15 18 21 24 27 30
= 10V
@ 25
V
D S
º
C
6.5V
6V
5.5V
5V
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
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Page 3
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Fig. 3. Output Characteristics
º
@ 125
30
27
24
21
18
15
- Amperes
12
D
I
9
6
3
0
0 2 4 6 8 10 12 14 16 18
Fig . 5. R
3
2.8
VGS = 10V
2.6
2.4
2.2
2
- Normalized
1.8
1.6
D S ( o n )
1.4
R
1.2
1
0.8
0 5 10 15 20 25 30 35 40 45 50 55 60
0.5 I
V
DS(on)
D25
D S
C
V
= 10V
GS
7V
- Volts
Nor m ali z ed t o
Value vs . I
T
= 125ºC
J
D
T
I D - Amperes
6V
5.5V
5V
4.5V
= 25ºC
J
Fig . 4. R
Nor m alize d to 0.5 I
DS(on
)
Value vs. Junction Temperature
3.4
3.1
2.8
2.5
2.2
1.9
- Normalized
1.6
1.3
D S ( o n )
R
0.7
0.4
VGS = 10V
I
= 30A
D
I
= 15A
D
1
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
Fig. 6. Drain Curre nt vs. Case
Tem pe rature
35
30
25
20
15
- Amperes
D
I
10
5
0
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
C
D25
Fig. 7. Input Admittance
35
30
25
20
15
- Amperes
D
I
10
5
0
© 2006 IXYS All rights reserved
TJ = 125ºC
º
25
-40
C
º
C
3.5 4 4.5 5 5.5 6 6.5 7
V
G S
- Volts
Fig. 8. Transconductance
50
45
40
TJ = -40ºC
35
30
25
125
º
C
º
C
25
- Siemens
20
f s
g
15
10
5
0
0 5 10 15 20 25 30 35 40
I
- Amperes
D
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Page 4
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Fig. 9. Sour ce Cu r r e nt vs .
Source-To-Drain Voltage
90
80
70
60
50
40
- Amperes
S
I
30
20
10
0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
T
= 125ºC
J
V
S D
- Volts
T
J
= 25ºC
Fig. 11. Capacitance
10000
Fig. 10. Gate Char ge
10
V
DS
= 15A
I
D
= 10m A
I
G
= 300V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
0 20 40 60 80 100 120 140 160
Q G - nanoCoulombs
Fig . 12. Fo r w ar d -Bias
Safe Operating Area
100
R
Limit
DS(on)
1000
100
Capacitance - picoFarads
f = 1MHz
10
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Fig. 13. M axim um Trans ie nt The r m al Resis t ance
1.00
ºC / W
-
0.10
( t h ) J C
R
C
iss
10
C
oss
C
rss
- Amperes
D
I
V
- Volts
D S
DC
TJ = 150ºC
= 25ºC
T
C
1
10 100 1000
10ms
25µs
100µs
1ms
0.01
0.1 1 10 100 1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
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Page 5
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Package Outline Drawings
TO-247AD (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXTT) Outline
TO-3P (IXTQ) Outline
PLUS220 (IXTV) Outline
© 2006 IXYS All rights reserved
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Page 6
PLUS220SMD (IXTV_S) Outline
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Package Outline Drawings
IXYS reserves the right to change limits, test conditions, and dimensions.
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