Datasheet IXSN50N60BD2, IXSN50N60BD3 Datasheet (IXYS)

1 - 5

© 2000 IXYS All rights reserved

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

IC= 3 mA, VGE = 0 V 600 V

V

GE(th)

IC= 4 mA, VCE = V

GE

48V

I

CES

VCE= 0.8 • V

CES

TJ = 25°C 350 mA

VGE= 0 V TJ = 125°C5mA

I

GES

VCE= 0 V, VGE = ±20 V ±100 nA

V

CE(sat)

IC= I

C90

, VGE = 15 V 2.2 2.5 V

Features

• International standard package
miniBLOC

• Aluminium nitride isolation

- high power dissipation

• Isolation voltage 3000 V~

• Very high current, fast switching
IGBT & FRED diode

• MOS Gate turn-on

- drive simplicity

• Low collector-to-case capacitance

• Low package inductance (< 10 nH)

- easy to drive and to protect

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Buck converters

Advantages

• Easy to mount with 2 screws

• Space savings

• High power density

98675 (4/18/2000)

Symbol Test Conditions Maximum Ratings

V

CES

TJ = 25°C to 150°C 600 V

V

CGR

TJ = 25°C to 150°C; RGE = 1 MW 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

TC = 25°C75A

I

C90

TC = 90°C50A

I

CM

TC = 25°C, 1 ms 200 A

SSOA V

GE

= 15 V, TVJ = 125°C, RG = 22 W ICM = 100 A

(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

CES

t

SC

VGE = 15 V, VCE = 360 V, TJ = 125°C 10ms

(SCSOA) RG = 22 W, non repetitive
P

C

TC = 25°C 250 W

V

RRM

600 V

I

FAVM

TC = 70°C; rectangular, d = 50% 60 A

I

FRM

tP z<10 ms; pulse width limited by TJ 600 A

P

D

TC = 25°C 150 W

T

J

-40 ... +150 °C

T

JM

150 °C

T

stg

-40 ... +150 °C

M

d

Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.

Weight 30 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

IGBT

DiodeCase

HIGH Speed IGBT
with HiPerFRED

Short Circuit SOA Capability
Buck & boost configurations

SOT-227B, miniBLOC

E 153432

2

1

4

3

Preliminary data

...BD2 ...BD3

IXSN50N60BD2

1 = Emitter; 2 = Gate
3 = Collector; 4 = Diode cathode

IXSN50N60BD3

1 = Emitter/Diode Cathode; 2 = Gate
3 = Collector; 4 = Diode anode

V

CES

= 600 V

I

C25

= 75 A

V

CEsat)

= 2.5 V

t

fi

= 150 ns

IXSN 50N60BD2
IXSN 50N60BD3

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 5

© 2000 IXYS All rights reserved

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

fs

IC= I

C90

; VCE = 10 V, 16 27 S

Pulse test, t £ 300 ms, duty cycle £ 2 %

C

ies

3850 pF

C

oes

VCE = 25 V, VGE = 0 V, f = 1 MHz 44 0 pF

C

res

50 pF

Q

g

167 nC

Q

ge

IC = I

C90

, VGE = 15 V, VCE = 0.5 V

CES

45 nC

Q

gc

88 nC

t

d(on)

70 ns

t

ri

70 ns

t

d(off)

150 300 ns

t

fi

150 300 ns

E

off

3.3 6.0 mJ

t

d(on)

70 ns

t

ri

70 ns

E

on

2.5 mJ

t

d(off)

230 ns

t

fi

230 ns

E

off

4.8 mJ

R

thJC

0.50 K/W

R

thCK

0.05 K/W

Inductive load, TJ = 25°C

IC = I

C90

, VGE = 15 V, L = 100 mH,

VCE = 0.8 V

CES

, RG = R

off

= 2.7 W

Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V

CES

, higher TJ or

increased R

G

Inductive load, TJ = 125°C

IC = I

C90

, VGE = 15 V, L = 100 mH

V

CE

= 0.8 V

CES

, RG = R

off

= 2.7 W

Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V

CES

, higher TJ or

increased R

G

Reverse Diode (FRED) Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions typ. max.
I

R

TVJ = 25°C VR= V

RRM

650 uA

TVJ = 150°C 2.5 mA

V

F

IF= 60 A 1.75 V
Pulse test, t £ 300 ms, duty cycle d £ 2 % 2.40 V

I

RM

IF= I

C90

, VGE = 0 V, -diF/dt = 100 A/ms 8.0 A

VR= 540 V, TJ = 100°C

t

rr

IF= 1 A, -di/dt = 50 A/ms, VR = 30 V 35 ns

R

thJC

0.85 K/W

IXSN 50N60BD2
IXSN 50N60BD3

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004

miniBLOC, SOT-227 B

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 5

© 2000 IXYS All rights reserved

VGE - Volts

4 6 8 10 12 14 16

I

C

- Amperes

0

20

40

60

80

100

VCE-Volts

0 5 10 15 20 25 30 35 40

Capacitance - pF

10

100

1000

10000

TJ - Degrees C

25 50 75 100 125 150

V

CE (sat)

- Normalized

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VCE - Volts

0246810

I

C

- Amperes

0

20

40

60

80

100

VCE - Volts

0 4 8 121620

I

C

- Amperes

0

40

80

120

160

13V

11V

9V

V

CE

= 10V

TJ = 25°C

VGE = 15V

TJ = 25°C

IC = 25A

I

C

= 50A

I

C

= 100A

T

J

= 125°C

C

rss

f = 1Mhz

9V

VGE = 15V

TJ = 25°C

VCE - Volts

0246810

I

C

- Amperes

0

20

40

60

80

100

TJ = 125°C

C

iss

C

oss

7V

9V

11V

7V

13V

V

GE

= 15V

13V

11V

V

GE

= 15V

IXSN 50N60BD2
IXSN 50N60BD3

Figure 1. Saturation Voltage Characteristics

Figure 2. Extended Output Characteristics

Figure 3. Saturation Voltage Characteristics

Figure 4. Temperature Dependence of V

CE(sat)

Figure 5. Admittance Curves

Figure 6. Capacitance Curves

4 - 5

© 2000 IXYS All rights reserved

Pulse Width - Seconds

0.00001 0.0001 0.001 0.01 0.1 1

Z

thJC

(K/W)

0.001

0.01

0.1

1

D=0.02

VCE - Volts

0 100 200 300 400 500 600

I

C

- Amperes

0.1

1

10

100

Qg - nanocoulombs

0 25 50 75 100 125 150 175

0

4

8

12

16

20

RG - Ohms

0 102030405060

E

(OFF)

- millijoules

0

5

10

15

20

E

(ON)

- millijoules

0

1

2

3

4

IC - Amperes

0 20406080100

E

(OFF)

- milliJoules

0

4

8

12

16

20

24

E

(ON)

-

millijo

u

les

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

CE

= 250V

I

C

=50A

E

(ON)

E

(OFF)

E

(ON)

E

(OFF)

TJ = 125°C

RG = 6.2



dV/dt < 5V/ns

D=0.1
D=0.05

Single pulse

D = Duty Cycle

TJ = 125°C

RG = 10



600

E

(OFF)

E

(OFF)

D=0.2

D=0.5

D=0.01

IC =25A

TJ = 125°C

I

C

= 100A

IC = 50A

E

(ON)

E

(ON)

IXSN 50N60BD2
IXSN 50N60BD3

Figure 9. Gate Charge

Figure 10. Turn-off Safe Operating Area

Figure 11. Transient Thermal Resistance

Figure 7. Dependence of EON and E

OFF

on IC. Figure 8. Dependence of EON and E

OFF

on RG.

5 - 5

© 2000 IXYS All rights reserved

200 600 10000 400 800

60

70

80

90

0.00001 0.0001 0.001 0.01 0.1 1

0.001

0.01

0.1

1

0 40 80 120 160

0.0

0.5

1.0

1.5

2.0

K

f

T

VJ

°C

-di

F

/dt

t

s

K/W

0 200 400 600 800 1000

0

5

10

15

20

0.00

0.25

0.50

0.75

1.00

V

FR

diF/dt

V

200 600 10000 400 800

0

5

10

15

20

25

30

100 1000

0

200

400

600

800

1000

0123

0

10

20

30

40

50

60

I

RM

Q

r

I

F

A

V

F

-diF/dt

-di

F

/dt

A/ms

A

V

nC

A/ms

A/ms

t

rr

ns

t

fr

Z

thJC

A/ms

µs

DSEC 60-06B

IF= 60A
IF= 30A
IF= 15A

TVJ= 100°C
VR = 300V

TVJ= 100°C
IF = 30A

Fig. 14Peak reverse current I

RM

versus -diF/dt

Fig. 13 Reverse recovery charge Q

r

versus -diF/dt

Fig. 12Forward current IF versus V

F

TVJ= 100°C
VR = 300V

TVJ= 100°C
VR = 300V

IF= 60A
I

F

= 30A

Q

r

I

RM

Fig. 15Dynamic parameters Qr, I

RM

versus T

VJ

Fig. 16Recovery time trr versus -diF/dt

Fig. 17Peak forward voltage V

FR

and t

fr

versus diF/dt

IF= 60A
IF= 30A
IF= 15A

t

fr

V

FR

Constants for Z

thJC

calculation:

iR

thi

(K/W) ti (s)

1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0396

TVJ=25°C

TVJ=100°C

TVJ=150°C

IXSN 50N60BD2
IXSN 50N60BD3