Datasheet IRSF3010S, IRSF3010 Datasheet (International Rectifier)

Features:

n Extremely Rugged for Harsh Operating

Environments

n Over Temperature Protection
n Over Current Protection
n Active Drain to Source Clamp
n ESD Protection
n Compatible with standard POWER

MOSFET

n Low Operating Input Current
n Monolithic Construction

n Dual set/reset Threshold Input

IRSF3010

Available PackagesIRSF3010 - Block Diagram

V

ds(clamp)

50 V

R

ds(on)

80 m

ΩΩ

ΩΩ

Ω

I

ds(sd)

11 A

T

j(sd)

155 °C

E

AS

400 mJ

Source

Drain

Applications:

n DC Motor Drive
n Solenoid Driver

FULLY PROTECTED POWER MOSFET SWITCH

Pin Assignment

Pin 1 - Input
Pin 2 - Drain
Pin 3 - Source
Tab - Drain

Provisional Data Sheet No.PD-6.0027A

3

2

1

Tab

IRSF3010

IRSF3010S

Rating Summary:General Description:

The IRSF3010 is a three terminal monolithic
SMART POWER MOSFET with built in short cir­cuit, over-temperature, ESD and over-voltage pro­tections.

The on chip protection circuit latches off the
POWER MOSFET in case the drain current ex­ceeds 14A (typical) or the junction temperature ex­ceeds 165°C (typical) and keeps it off until the
input is driven low. The drain to source voltage
is actively clamped at 55V (typical), prior to the
avalanche of POWER MOSFET, thus improving
its performance during turn off with inductive
loads.

The input current requirements are very low
(300uA) which makes the IRSF3010 compatible with
most existing designs based on standard
POWER MOSFETs.

IRSF3010

2

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc =
25°C unless otherwise specified.)

Symbol Parameter Definition Min. Max. Test Conditions

V

ds, max

Continuous Drain to Source Voltage — 50

V

in, max

Continuous Input Voltage -0.3 10

I

ds

Continuous Drain Current — self limited

P

d

Power Dissipation — 40 W T

c

≤ 25°C

Linear Derating Factor for Tc > 25°C — 0.33 W/°C

E

AS

Unclamped Single Pulse Inductive Energy — 40 0 m J

V

esd1

Electrostatic Discharge Voltage (Human Body Model) — 4000 1000pF . 1.5kΩ

V

esd2

(Machine Model) — 1000 200pF, 0Ω

T

Jop

Junction T emperature -55

self-limited

T

Stg

Storage T emperature -55 175

T

L

Lead T emperature (Soldering, 10 seconds) — 300

Thermal Characteristics

Units

V

V

o

C

Symbol Parameter Definition Min. Typ. Max. Units Test Conditions

V

ds,clamp

Drain to Source Clamp Voltage 50 54 — Ids = 10mA

—5662 Ids = 11A, tp = 700 µS

R

ds(on)

Drain to Source On Resistance — 70 80 Vin = 5V, Ids = 4A

—85— Vin = 4V, Ids = 4A
—53— Vin = 10V, Ids = 4A

I

dss

Drain to Source Leakage Current — — 10 Vds = 12V, Vin = 0V

— — 100 Vds = 50V, Vin = 0V
— 10 250 V

ds

=40V,Vin=0V,Tc=150oC

V

th

Input Threshold Voltage 1.5 2.0 2.5 V Vds = 5V, Ids = 1mA

I

i, on

Input Supply Current (Normal Operation) — 0.25 0.6 Vin = 5V

— 0.35 0.85 Vin = 10V

I

i, off

Input Supply Current (Protection Mode) — 0.5 1.0 Vin = 5V

—0.61.2 Vin = 10V

V

in, clamp

Input Clamp Voltage 10 10.8 — Iin = 10mA

V

sd

Body-Drain Diode Forward Drop ➁ — 1.2 1.5 Ids = -17A, Rin = 1k

Ω

Static Electrical Characteristics

(Tc = 25°C unless otherwise specified.)

V

mΩ

µA

mA

V

Symbol Parameter Definition Min. Typ. Max. Units Test Conditions

R

Θjc

Thermal Resistance, Junction to Case — 3.0 — °C/W

R

ΘjA

Thermal Resistance, Junction to Ambient — 60 — °C/W

IRSF3010

3

Notes:

1. EAS is tested with a constant current source of 11A applied for 700µS with Vin = OV and starting Tj = 25oC.

2. Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode
is forward biased.

Symbol Parameter Definition Min. Typ. Max. Units Test Conditions

V

ds,clamp

Temperature Coefficient of Drain to Source
Clamp Voltage — 18.2 —

V

th

Temperature Coefficient of Input Threshold
Voltage — -3.2 —

V

in,clamp

Temperature Coefficient of Input Clamp
Voltage — 7.0 —

I

ds(sd)

Temperature Coefficient of Over-Current
Shutdown Threshold — -21.5 — mA/oC

Ids = 10mA

Vds = 5V, Ids = 1mA

Iin = 10mA

Vin = 5V

mV/oC

T emperature Coefficients of Electrical Characteristics:

(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.

Symbol Parameter Definition Min. Typ. Max. Units Test Conditions

t

don

Turn-On Delay time — 425 650 Vin = 5V

— 150 — Vin = 10V

t

r

Rise Time — 2000 4000 Vin = 5V

— 425 — Vin = 10V

t

doff

Turn-Off Delay time — 650 1000 Vin = 5V

— 850 — Vin = 10V

t

f

Fall Time — 500 800 Vin = 5V

— 450 — Vin = 10V

Switching Electrical Characteristics:

(Vcc = 14V, Resistive Load RL = 5Ω, Tc = 25 °C.) Please refer to Figure 15 for switching time definitions.

nS

Symbol Parameter Definition Min. Typ. Max. Units Test Conditions

I

ds(sd)

Over-Current Shutdown Threshold 11 14 17 A Vin = 5V

T

j(sd)

Over Temperature Shutdown Threshold 155 165 — °C Vin = 5V, Ids = 2A

V

protect

Minimum Input Voltage for Over-temp fxn. — 3 — V

t

Iresp

Over Current Response Time — 2 — See figure 16 for definition

t

Iblank

Over Current Blanking Time — 3 — See figure 16 for definition

I

peak

Peak Short Circuit Current — 2 0 — A See figure 16 for definition

V

reset

Protection Reset Voltage — 1.3 — V

t

reset

Protection Reset Time — 7 — See figure 17 for definition

t

Tresp OverTemperature Response Time

— 1 2 — See figure 18 for definition

µS

µS

Protection Characteristics:

(Tc = 25 °C unless otherwise specified.)

IRSF3010

4

30

40

50

60

70

80

90

100

110

120

-50 -25 0 25 50 75 100 125 150

Temperature (°C)

Rds(on) (mOhm)

Vin = 10V

Vin = 5V

Ids = 4A

40

50

60

70

80

90

100

110

120

24681012141618

Ids (A)

Rds(on) (mOhm)

Vin = 4V

Vin = 5V

Vin = 7V

Vin = 10V

T = 25°C

Fig. 3 - On Resistance vs Drain to Source Current Fig. 4 - On Resistance vs. Temperature

13

14

15

16

17

45678910

Input Voltage (Volts)

Shut Down Current (A)

T = 25°C

Fig. 5 - Over-current Shutdown Threshold vs

Input Voltage

10

11

12

13

14

15

16

-50 -25 0 25 50 75 100 125 1 50

Temperature (°C)

Shut Down Current (A)

Vi n = 5V

Fig. 6 - Over-current Shutdown Threshold vs

Temperature

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

01234567891011

Input Volt age (Volt s )

Input Current (mA)

Iin ,off

T=25°C

Iin ,on

Rating

0

500

1000

1500

2000

2500

3000

3500

0255075100125150

Starting Ju nc tion Temperature (°C)

Single Pulse En ergy to Failur e (mJ)

Ids = 12A

Ids = 8A

Vdd = 25V

Figure 7 - Input Current vs. Input Voltage

Fig. 8 - Unclamped Single Pulse Inductive Energy to

Failure vs Starting Junction Temperature

IRSF3010

5

F ig. 9 - Turn on characteristics vs Input Voltag e F ig. 10 - Turn on characteristics vs Temperat ure

Fig. 11 - Turn off characteristics vs Input Voltage Fig. 12 - Turn off characteristics vs Temperature

Fig. 13 - Source-Drain Diode Forward Voltage Fig. 14 - Transient Thermal Impedance, Junction to Case

0.00

0.50

1.00

1.50

2.00

2.50

34567891011

I

np ut Voltage ( Volt

s)

R

ise Time, On Delay (µ

S)

O

n Dela

y

R

ise Tim

e

T

= 25°

C

0.3

0.4

0.5

0.6

0.7

0.8

0.9

34567891011

I

np ut Voltage ( Volt

s)

F

all T i me, Off Delay (µ

S)

O

ff Dela

y

F

all Tim

e

T

= 25°

C

0.3

0.4

0.5

0.6

0.7

0.8

0.9

-50 -25 0 25 50 75 100 125 150

T

emperature (°C

)

F

all Time, Off Delay (µ

S)

O

ff Dela

y

F

a ll Tim

e

V

in = 5

V

1

10

100

0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

S

ource to Drain Voltage (Volt

s)

R

everse Dra in C urrent (A

)

T

= 25°

C

T

= 150°

C

0.00

0.50

1.00

1.50

2.00

2.50

-50 -25 0 25 50 75 100 125 150

T

emperature (°C

)

R

ise Time, On Delay (µ

S)

O

n Dela

y

R

is e Tim

e

V

in = 5

V

0.01

0.1

1

10

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

P

ulse Duration tp (

S)

T

hermal R esponse (°C/ W

)

0

.5

0.1

0

D

uty Fact o r

=

D

F=

0

.50

0

.20

0

.10

0

.05

0

.02

0

.01

0

.00

IRSF3010

6

50%

90%

10%

V

ds

V

in

t

t

t

dontr

t

dofftf

I

ds

V

in

t

t

I

peak

t

I

blank

t

I

resp

Short applied
before turn-on

Short applied

after turn-on

5V

Vcc = 14V= 0

R

L

I

ds

V

in

t

t

5V

Vcc = 14V= 1 mHR

L

I

ds(sd)

t <

reset

t

t >

reset

t

I

ds

V

in

t

t

t

T

resp

5V

Vcc = 14V= 10

R

L

Ω

+ 5°C TJ= T

JSD

Fig. 15 - Definition of Switching times. Fig. 16 - Definition of I

peak

, t

Iblank

, t

Iresp

Fig. 17 - Definition of t

reset

Fig. 18 - Definition of t

Tresp

IRSF3010

7

Case Outline  TO-220AB (IRSF3010)

NOTES:

1. Dimensioning and tolerancing per ANSI Y14.5M, 1982

2. Controlling dimension: INCH

3. Dimensions shown are in millimeters (inches)

4. Conforms to JEDEC outline TO-251AA

5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)

LEAD ASSIGNMENTS

1. Gate

2. Drain

3. Source

4. Drain

IRSF3010

8

Case Outline  SMD-220 (IRSF3010S)

IRSF3010

9

Tape and Reel  SMD-220 (IRSF3010S)

IRSF3010

10

Application Information

Introduction

Protected monolithic POWER MOSFETs offer simple,
cost effective solutions in applications where extreme
operating conditions can occur. The margin between
the operating conditions and the absolute maxi­mum values can be narrowed resulting in better
utilization of the device and lower cost. ESD protec­tion also reduces the off-circuit failures during han­dling and assembly.

General Description

The IRSF3010 is a fully protected monolithic N-chan­nel, logic level POWER MOSFET with 80mΩ (max)
on-resistance. The built-in protections include over­current, over-temperature, ESD and active over-volt­age protections.

The over-current and over-temperature protection
makes the IRSF3010 indestructible at any load condi­tions in switching or in linear applications. The built-in
ESD protection minimizes the risk of ESD damage
when the device is off-circuit. The IRSF3010 is fully
characterized for avalanche operation and can be used
for fast de-energization of inductive loads.

The IRSF3010 Intelligent Power Switch that is
available in the TO220 package offers an easy up­grade from non-protected devices.

Block Diagram

The zener diode between the input and the source
(see figure 20) provides the ESD protection for the
input and also limits the applicable voltage to the in­put to 10V.

The R-S flip-flop memorizes the occurrence of an er­ror condition and controls the Q2 and Q3 switches.
The flip-flop can be cleared by holding the input low
for the specified minimum duration.

COMP1 and COMP2 comparators are used to com­pare the over-current and over-temperature signals
with the built-in reference. Either comparator can re­set the fault flip-flop and turn Q1 off. During fault con­dition, Q2 disconnects gate of Q1 from the input, Q3
shorts the gate and source of Q1, resulting in rapid
turn-off of Q1. The zener diode between the gate and
drain of Q1 turns Q1 on, when the drain to source
voltage exceeds 55V.

Switching Characteristics

In the IRSF3010 the control logic and the protection
circuits are powered from the input pin. When posi­tive voltage appears at the input pin the R-S flip-flop
turns Q2 on and connects the gate of the main device
to the input.

The turn-on speed is limited by the channel resistance
of Q2 and the gate charge requirements of Q1. The
typical switching waveforms at 5V input voltage are
shown in figure 21. Using higher input voltage will
improve the turn-on time but it does not affect the turn­off switching speed.

Fig.20 Block Diagram

Fig.21 Waveforms switching clamped indictive

load using 5V input voltage

Input voltage 5V/

Drain Current: 1A/div .

Drain voltage 5V/

Time: 1µsV/div.

IRSF3010

11

The typical waveforms at 7V input voltage are shown
in figure 22. In typical switching applications, below
40kHz, the difference in switching losses between the
IRSF3010 and the same size standard MOSFET is
negligible.

Fig. 22 Switching waveforms with 7V Input

voltage

The typical waveforms at over-current shut-down are
shown in figure 23. After turn-on the current in the
inductor at the drain starts ramping up. At about 1 5A
the over-current protection shuts down the device.

Over-temperature Protection

Figure 24 illustrates the operation of the over-tempera­ture protection. The IRSF3010 switches a 1Ω resis­tive load to a 12V power supply. When the thermal
balance is established the junction temperature is lim­ited on pulse by pulse basis.

Fig. 24 Over-temperature shut-down

Fig. 23 Waveforms at over-current shut-down

Over-voltage Protection

When the drain to source voltage exceeds 55V the
zener diode between gate and drain turns the
IRSF3010 on, before the breakdown voltage of the
drain-source diode is reached. This greatly enhances
the energy the device can withstand safely during turn­off of inductive loads compared to avalanche break­down. Thus the device can be used for fast de­energization of inductive loads. The absorbed energy
is limited only by the maximum junction temperature.

Over-current Protection

When the drain current exceeds the preset limit the
protection circuit resets the internal flip-flop and turns
Q1 off. The normal operation can be restored by hold­ing the input voltage below the specified threshold level
(approx. 1.3V) for the specified minimum t

reset

time.

Input voltage 10V/div.

Drain voltage 5V/div .

Drain Current: 2A/div.

Time: 10µsV/div .

Time: 10µsV/div .

Drain Current: 2A/div .

Input voltage 5V/div.

Drain voltage 5V/div.

Input voltage 5V/

Drain voltage 5V/

Drain Current: 1A/

Time: 1µsV/div.

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http://www.irf.com/ Data and specifications subject to change without notice. 12/96