Datasheet IRSF3010S, IRSF3010 Datasheet (International Rectifier)

Page 1
Features:
n Extremely Rugged for Harsh Operating
Environments
n Over Temperature Protection n Over Current Protection n Active Drain to Source Clamp n ESD Protection n Compatible with standard POWER
n Low Operating Input Current n Monolithic Construction
n Dual set/reset Threshold Input
IRSF3010
Available PackagesIRSF3010 - Block Diagram
V
ds(clamp)
50 V
R
ds(on)
80 m
I
ds(sd)
11 A
T
j(sd)
155 °C
E
AS
400 mJ
Source
Drain
Applications:
n DC Motor Drive n Solenoid Driver
FULLY PROTECTED POWER MOSFET SWITCH
Pin Assignment
Pin 1 - Input Pin 2 - Drain Pin 3 - Source Tab - Drain
Provisional Data Sheet No.PD-6.0027A
3
2
1
Tab
IRSF3010
IRSF3010S
Rating Summary:General Description:
The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short cir­cuit, over-temperature, ESD and over-voltage pro­tections.
The on chip protection circuit latches off the POWER MOSFET in case the drain current ex­ceeds 14A (typical) or the junction temperature ex­ceeds 165°C (typical) and keeps it off until the input is driven low. The drain to source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn off with inductive loads.
The input current requirements are very low (300uA) which makes the IRSF3010 compatible with most existing designs based on standard POWER MOSFETs.
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IRSF3010
2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless otherwise specified.)
Symbol Parameter Definition Min. Max. Test Conditions
V
ds, max
Continuous Drain to Source Voltage — 50
V
in, max
Continuous Input Voltage -0.3 10
I
ds
Continuous Drain Current — self limited
P
d
Power Dissipation 40 W T
c
25°C
Linear Derating Factor for Tc > 25°C 0.33 W/°C
E
AS
Unclamped Single Pulse Inductive Energy 40 0 m J
V
esd1
Electrostatic Discharge Voltage (Human Body Model) 4000 1000pF . 1.5k
V
esd2
(Machine Model) 1000 200pF, 0
T
Jop
Junction T emperature -55
self-limited
T
Stg
Storage T emperature -55 175
T
L
Lead T emperature (Soldering, 10 seconds) 300
Thermal Characteristics
Units
V
V
o
C
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
V
ds,clamp
Drain to Source Clamp Voltage 50 54 Ids = 10mA
—5662 Ids = 11A, tp = 700 µS
R
ds(on)
Drain to Source On Resistance 70 80 Vin = 5V, Ids = 4A
—85— Vin = 4V, Ids = 4A —53— Vin = 10V, Ids = 4A
I
dss
Drain to Source Leakage Current 10 Vds = 12V, Vin = 0V
100 Vds = 50V, Vin = 0V — 10 250 V
ds
=40V,Vin=0V,Tc=150oC
V
th
Input Threshold Voltage 1.5 2.0 2.5 V Vds = 5V, Ids = 1mA
I
i, on
Input Supply Current (Normal Operation) 0.25 0.6 Vin = 5V
0.35 0.85 Vin = 10V
I
i, off
Input Supply Current (Protection Mode) 0.5 1.0 Vin = 5V
—0.61.2 Vin = 10V
V
in, clamp
Input Clamp Voltage 10 10.8 Iin = 10mA
V
sd
Body-Drain Diode Forward Drop 1.2 1.5 Ids = -17A, Rin = 1k
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
V
m
µA
mA
V
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
R
Θjc
Thermal Resistance, Junction to Case 3.0 °C/W
R
ΘjA
Thermal Resistance, Junction to Ambient 60 °C/W
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IRSF3010
3
Notes:
1. EAS is tested with a constant current source of 11A applied for 700µS with Vin = OV and starting Tj = 25oC.
2. Input current must be limited to less than 5mA with a 1k resistor in series with the input when the Body-Drain Diode is forward biased.
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
V
ds,clamp
Temperature Coefficient of Drain to Source Clamp Voltage 18.2
V
th
Temperature Coefficient of Input Threshold Voltage -3.2
V
in,clamp
Temperature Coefficient of Input Clamp Voltage 7.0
I
ds(sd)
Temperature Coefficient of Over-Current Shutdown Threshold -21.5 — mA/oC
Ids = 10mA
Vds = 5V, Ids = 1mA
Iin = 10mA
Vin = 5V
mV/oC
T emperature Coefficients of Electrical Characteristics:
(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
t
don
Turn-On Delay time 425 650 Vin = 5V
150 Vin = 10V
t
r
Rise Time 2000 4000 Vin = 5V
425 Vin = 10V
t
doff
Turn-Off Delay time 650 1000 Vin = 5V
850 Vin = 10V
t
f
Fall Time 500 800 Vin = 5V
450 Vin = 10V
Switching Electrical Characteristics:
(Vcc = 14V, Resistive Load RL = 5, Tc = 25 °C.) Please refer to Figure 15 for switching time definitions.
nS
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
I
ds(sd)
Over-Current Shutdown Threshold 11 14 17 A Vin = 5V
T
j(sd)
Over Temperature Shutdown Threshold 155 165 °C Vin = 5V, Ids = 2A
V
protect
Minimum Input Voltage for Over-temp fxn. 3 V
t
Iresp
Over Current Response Time 2 See figure 16 for definition
t
Iblank
Over Current Blanking Time 3 See figure 16 for definition
I
peak
Peak Short Circuit Current 2 0 A See figure 16 for definition
V
reset
Protection Reset Voltage 1.3 V
t
reset
Protection Reset Time 7 See figure 17 for definition
t
Tresp OverTemperature Response Time
1 2 See figure 18 for definition
µS
µS
Protection Characteristics:
(Tc = 25 °C unless otherwise specified.)
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IRSF3010
4
30
40
50
60
70
80
90
100
110
120
-50 -25 0 25 50 75 100 125 150
Temperature (°C)
Rds(on) (mOhm)
Vin = 10V
Vin = 5V
Ids = 4A
40
50
60
70
80
90
100
110
120
24681012141618
Ids (A)
Rds(on) (mOhm)
Vin = 4V
Vin = 5V
Vin = 7V
Vin = 10V
T = 25°C
Fig. 3 - On Resistance vs Drain to Source Current Fig. 4 - On Resistance vs. Temperature
13
14
15
16
17
45678910
Input Voltage (Volts)
Shut Down Current (A)
T = 25°C
Fig. 5 - Over-current Shutdown Threshold vs
Input Voltage
10
11
12
13
14
15
16
-50 -25 0 25 50 75 100 125 1 50
Temperature (°C)
Shut Down Current (A)
Vi n = 5V
Fig. 6 - Over-current Shutdown Threshold vs
Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
01234567891011
Input Volt age (Volt s )
Input Current (mA)
Iin ,off
T=25°C
Iin ,on
Rating
0
500
1000
1500
2000
2500
3000
3500
0255075100125150
Starting Ju nc tion Temperature (°C)
Single Pulse En ergy to Failur e (mJ)
Ids = 12A
Ids = 8A
Vdd = 25V
Figure 7 - Input Current vs. Input Voltage
Fig. 8 - Unclamped Single Pulse Inductive Energy to
Failure vs Starting Junction Temperature
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IRSF3010
5
F ig. 9 - Turn on characteristics vs Input Voltag e F ig. 10 - Turn on characteristics vs Temperat ure
Fig. 11 - Turn off characteristics vs Input Voltage Fig. 12 - Turn off characteristics vs Temperature
Fig. 13 - Source-Drain Diode Forward Voltage Fig. 14 - Transient Thermal Impedance, Junction to Case
0.00
0.50
1.00
1.50
2.00
2.50
34567891011
I
np ut Voltage ( Volt
s)
R
ise Time, On Delay (µ
S)
O
n Dela
y
R
ise Tim
e
T
= 25°
C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
34567891011
I
np ut Voltage ( Volt
s)
F
all T i me, Off Delay (µ
S)
O
ff Dela
y
F
all Tim
e
T
= 25°
C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50 -25 0 25 50 75 100 125 150
T
emperature (°C
)
F
all Time, Off Delay (µ
S)
O
ff Dela
y
F
a ll Tim
e
V
in = 5
V
1
10
100
0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
S
ource to Drain Voltage (Volt
s)
R
everse Dra in C urrent (A
)
T
= 25°
C
T
= 150°
C
0.00
0.50
1.00
1.50
2.00
2.50
-50 -25 0 25 50 75 100 125 150
T
emperature (°C
)
R
ise Time, On Delay (µ
S)
O
n Dela
y
R
is e Tim
e
V
in = 5
V
0.01
0.1
1
10
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
P
ulse Duration tp (
S)
T
hermal R esponse (°C/ W
)
0
.5
0.1
0
D
uty Fact o r
=
D
F=
0
.50
0
.20
0
.10
0
.05
0
.02
0
.01
0
.00
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IRSF3010
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50%
90%
10%
V
ds
V
in
t
t
t
dontr
t
dofftf
I
ds
V
in
t
t
I
peak
t
I
blank
t
I
resp
Short applied before turn-on
Short applied
after turn-on
5V
Vcc = 14V= 0
R
L
I
ds
V
in
t
t
5V
Vcc = 14V= 1 mHR
L
I
ds(sd)
t <
reset
t
t >
reset
t
I
ds
V
in
t
t
t
T
resp
5V
Vcc = 14V= 10
R
L
+ 5°C TJ= T
JSD
Fig. 15 - Definition of Switching times. Fig. 16 - Definition of I
peak
, t
Iblank
, t
Iresp
Fig. 17 - Definition of t
reset
Fig. 18 - Definition of t
Tresp
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IRSF3010
7
Case Outline  TO-220AB (IRSF3010)
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2. Controlling dimension: INCH
3. Dimensions shown are in millimeters (inches)
4. Conforms to JEDEC outline TO-251AA
5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)
LEAD ASSIGNMENTS
1. Gate
2. Drain
3. Source
4. Drain
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IRSF3010
8
Case Outline  SMD-220 (IRSF3010S)
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IRSF3010
9
Tape and Reel  SMD-220 (IRSF3010S)
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IRSF3010
10
Application Information
Introduction
Protected monolithic POWER MOSFETs offer simple, cost effective solutions in applications where extreme operating conditions can occur. The margin between the operating conditions and the absolute maxi­mum values can be narrowed resulting in better utilization of the device and lower cost. ESD protec­tion also reduces the off-circuit failures during han­dling and assembly.
General Description
The IRSF3010 is a fully protected monolithic N-chan­nel, logic level POWER MOSFET with 80m(max) on-resistance. The built-in protections include over­current, over-temperature, ESD and active over-volt­age protections.
The over-current and over-temperature protection makes the IRSF3010 indestructible at any load condi­tions in switching or in linear applications. The built-in ESD protection minimizes the risk of ESD damage when the device is off-circuit. The IRSF3010 is fully characterized for avalanche operation and can be used for fast de-energization of inductive loads.
The IRSF3010 Intelligent Power Switch that is available in the TO220 package offers an easy up­grade from non-protected devices.
Block Diagram
The zener diode between the input and the source (see figure 20) provides the ESD protection for the input and also limits the applicable voltage to the in­put to 10V.
The R-S flip-flop memorizes the occurrence of an er­ror condition and controls the Q2 and Q3 switches. The flip-flop can be cleared by holding the input low for the specified minimum duration.
COMP1 and COMP2 comparators are used to com­pare the over-current and over-temperature signals with the built-in reference. Either comparator can re­set the fault flip-flop and turn Q1 off. During fault con­dition, Q2 disconnects gate of Q1 from the input, Q3 shorts the gate and source of Q1, resulting in rapid turn-off of Q1. The zener diode between the gate and drain of Q1 turns Q1 on, when the drain to source voltage exceeds 55V.
Switching Characteristics
In the IRSF3010 the control logic and the protection circuits are powered from the input pin. When posi­tive voltage appears at the input pin the R-S flip-flop turns Q2 on and connects the gate of the main device to the input.
The turn-on speed is limited by the channel resistance of Q2 and the gate charge requirements of Q1. The typical switching waveforms at 5V input voltage are shown in figure 21. Using higher input voltage will improve the turn-on time but it does not affect the turn­off switching speed.
Fig.20 Block Diagram
Fig.21 Waveforms switching clamped indictive
load using 5V input voltage
Input voltage 5V/
Drain Current: 1A/div .
Drain voltage 5V/
Time: 1µsV/div.
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IRSF3010
11
The typical waveforms at 7V input voltage are shown in figure 22. In typical switching applications, below 40kHz, the difference in switching losses between the IRSF3010 and the same size standard MOSFET is negligible.
Fig. 22 Switching waveforms with 7V Input
voltage
The typical waveforms at over-current shut-down are shown in figure 23. After turn-on the current in the inductor at the drain starts ramping up. At about 1 5A the over-current protection shuts down the device.
Over-temperature Protection
Figure 24 illustrates the operation of the over-tempera­ture protection. The IRSF3010 switches a 1resis­tive load to a 12V power supply. When the thermal balance is established the junction temperature is lim­ited on pulse by pulse basis.
Fig. 24 Over-temperature shut-down
Fig. 23 Waveforms at over-current shut-down
Over-voltage Protection
When the drain to source voltage exceeds 55V the zener diode between gate and drain turns the IRSF3010 on, before the breakdown voltage of the drain-source diode is reached. This greatly enhances the energy the device can withstand safely during turn­off of inductive loads compared to avalanche break­down. Thus the device can be used for fast de­energization of inductive loads. The absorbed energy is limited only by the maximum junction temperature.
Over-current Protection
When the drain current exceeds the preset limit the protection circuit resets the internal flip-flop and turns Q1 off. The normal operation can be restored by hold­ing the input voltage below the specified threshold level (approx. 1.3V) for the specified minimum t
reset
time.
Input voltage 10V/div.
Drain voltage 5V/div .
Drain Current: 2A/div.
Time: 10µsV/div .
Time: 10µsV/div .
Drain Current: 2A/div .
Input voltage 5V/div.
Drain voltage 5V/div.
Input voltage 5V/
Drain voltage 5V/
Drain Current: 1A/
Time: 1µsV/div.
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http://www.irf.com/ Data and specifications subject to change without notice. 12/96
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