Datasheet IRLML6402 Datasheet (IOR)

查询IRLML2402供应商

PD- 93755

IRLML6402

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching

G

D

V

= -20V

DSS

R

S

DS(on)

= 0.065Ω

Description

These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on­resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET



power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.

A thermally enhanced large pad leadframe has been incorporated

Micro3

into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A
I

DM

PD @TA = 25°C Power Dissipation 1.3
PD @TA = 70°C Power Dissipation 0.8

E

AS

V

GS

T

J, TSTG

Drain- Source Voltage -20 V

Pulsed Drain Current  -22

Linear Derating Factor 0.01 W/°C
Single Pulse Avalanche Energy 11 mJ
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient 75 100 °C/W

www.irf.com 1

8/13/99

IRLML6402

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA 

J

Static Drain-to-Source On-Resistance

––– 0.050 0.065 VGS = -4.5V, ID = -3.7A 
––– 0.080 0.135 VGS = -2.5V, ID = -3.1A 

Ω

Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA
Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A 

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -20V, VGS = 0V
––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 8.0 12 ID = -3.7A
Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V 
Turn-On Delay Time ––– 350 –– – VDD = -10V
Rise Time ––– 48 ––– ID = -3.7A
Turn-Off Delay Time ––– 588 ––– RG = 89Ω

ns

Fall Time ––– 381 ––– RD = 2.7Ω
Input Capacitance ––– 633 ––– VGS = 0V
Output Capacitance –– – 145 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

-1.3

-22

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V 
Reverse Recovery Time ––– 29 43 n s TJ = 25°C, IF = -1.0A
Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on 1" square single layer 1oz. copper FR4 board,

steady state.

 Starting T

RG = 25Ω, I

= 25°C, L = 1.65mH

J

= -3.7A.

AS

** For recommended footprint and soldering techniques refer to application note #AN-994.

2 www.irf.com

D

S

IRLML6402

100

10

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-2.25V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

100

J

100

10

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-2.25V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

-3.7A

°

T = 25 C

J

°

T = 150 C

J

1.5

1.0

(Normalized)

D

-I , Drain-to-Source Current (A)

V = -15V

DS

10

2.0 3.0 4.0 5.0 6.0 7.0 8.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

www.irf.com 3

IRLML6402

1000

800

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

+ Cgd, C

gd

Ciss

600

400

C, Capacitance(pF)

200

Coss
Crss

0

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

SHORTED

ds

10

I =

-3.7A

D

V = -10V

8

6

4

2

GS

-V , Gate-to-Source Voltage (V)

0

0 3 6 9 12

Q , Total Gate Charge (nC)

G

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

10us

100us

1ms

10ms

10

°

T = 150 C

J

1

°

T = 25 C

J

SD

-I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

10

1

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C
Single Pulse

0.1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRLML6402

(

)

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0
25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1000

25

TOP

20

15

10

5

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

I

D

-1.7A

-3.0A

-3.7A

°

100

thJA

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

1

Thermal Response (Z )

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE

THERMAL RESPONSE

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRLML6402

0.14

)

Ω

0.12

0.10

0.08

)

0.20

Ω

VGS = -2.5V

0.16

0.12

0.06

, Drain-to -Source Voltage (

0.04

DS(on)

R

0.02

2.0 3.0 4.0 5.0 6.0 7.0

-V

Gate -to -Source Voltage ( V )

GS,

Id = -3.7A

Fig 12. Typical On-Resistance Vs.

Gate Voltage

0.08

, Drain-to-Source On Resistance (

0.04

DS ( on )

0.00

R

0 5 10 15 20 25 30

-ID , Drain Current ( A )

Fig 13. Typical On-Resistance Vs.

Drain Current

VGS = -4.5V

6 www.irf.com

Package Outline

(

)

(

)

(

)

)

(

)

Micro3

Dimensions are shown in millimeters (inches)







D

3

- B -

3

E

- A -

- C ­B 3X

0.10 (.004) M C A S B S

NOTES:

1. DIMENSIO NING & TO LE RA NC ING P ER AN SI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.
DIMENSIONS DO NOT INCLUDE MO LD FLASH.

3

3

1

2

e

e1

A

A1

LEAD ASSIGNMENTS
1 - GAT E
2 - SOURCE
3 - DRA IN

H

.008 ) M A M

0.20

0.008

.003

θ

L

3X 3X

IRLML6402

INC H E S MILLIM ET E RS

DIM

MIN MAX MIN MAX
A .03 2 .044 0.82 1.11
A1 .001 .004 0.02 0.10
B .01 5 .021 0.38 0.54
C .004 .006 0.10 0.15

D .105 .120 2.67 3.05
e .0750 BASIC 1.90 BASIC
e1 .0375 BAS IC 0.95 BAS IC
E .047 .055 1.20 1.40
H .083 .098 2.10 2.50
L .005 .010 0.13 0.25

θ

0° 8° 0° 8°

MINIMUM RECOM MENDED FOO TPRINT

C

0.90
.035

3X

0.80 ( .031
3X

2.00
.079

0.95 ( .037
2X

Part Marking Information



Micro3





EXAM PLE : THIS IS AN IRLM L6302

WORK

PART NUMBER

1 C YW

Y = YEAR CODE

W = W EEK CODE

PART NU MBER EXAM PLES:
1A = IRLML2402
1B = IRLML2803
1C = IRLM L6302
1D = IRLM L5103

DATE
CODE

TOP

DATE CODE EXAMPLES:
YW W = 9503 = 5C
YW W = 9532 = EF

YEAR Y WEEK W
2001 1 01 A

2002 2 02 B
2003 3 03 C
1994 4 04 D
1995 5
1996 6
1997 7
1998 8
1999 9
2000 0 24 X
25 Y
26 Z

W O R K WEEK = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDER YEAR
W O R K WEEK = ( 27-52) IF PRECEDED BY LETTER

WORK

YEAR Y WEEK W
2001 A 27 A

2002 B 28 B
2003 C 29 C
1994 D 30 D
1995 E
1996 F
1997 G
1998 H
1999 J
2000 K 50 X
51 Y
52 Z

www.irf.com 7

IRLML6402

Tape & Reel Information

Micro3

Dimensions are shown in millimeters (inches)







2.05 ( .080 )

1.95 ( .077 )

TR

FEED DIRECTION

178.00
( 7.008 )
MA X.

4.1 ( .161 )

3.9 ( .154 )

4.1 ( .161 )

3.9 ( .154 )

1.6 ( .062 )

1.5 ( .060 )

1.1 ( .043 )

0.9 ( .036 )

1.85 ( .072 )

1.65 ( .065 )

3.55 ( .139 )

3.45 ( .136 )

1.32 ( .051 )

1.12 ( .045 )

8.3 ( .326 )

7.9 ( .312 )

0.35 ( .013 )

0.25 ( .010 )

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CON TROLLING DIMENSION : MILLIMETER.

2. OU T LINE C ONF O R M S T O E IA-481 & E IA-541.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 8/99

8 www.irf.com