Page 1
Bulletin I27132 rev. I 09/04
IRK.71, .91 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
isolating voltage
RMS
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
75 A
95 A
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters IRK.71 IRK.91 Units
I
or I
T(AV)
F(AV)
@ 85°C
I
(*) 165 210 A
O(RMS)
I
@ 50Hz 1665 1785 A
TSM
I
@ 60Hz 1740 1870 A
FSM
I2t @ 50Hz 13.86 15.91 KA2s
@ 60Hz 12.56 14.52 KA2s
I2√t 138.6 159.1 KA2√s
V
range 400 to 1600 V
RRM
T
STG
T
J
(*) As AC switch.
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75 95 A
- 40 to 125
- 40 to125
o
C
o
C
1
Page 2
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
V
, maximum V
RRM
Type number
Voltage repetitive non-repetitive peak off-state voltage, I
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-V V VmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.71 IRK.91 Units Conditions
I
Max. average on-state
T(AV)
current (Thyristors) 180
I
Max. average forward T
F(AV)
current (Diodes)
Max. continuous RMS
I
O(RMS
)
on-state current. 165 210
As AC switch
Max. peak, one cycle 1665 1785 t=10ms No voltage
I
TSM
or non-repetitive on-state 1740 1870 t=8.3ms reapplied
I
or forward current 1400 1500 t=10ms 100% V
FSM
2
t Max. I2t for fusing 13.86 15.91 t=10ms No voltage
I
2
I
√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied,TJ = TJ max
Max. value of threshold 0.82 0.80 Low level (3)
V
T(TO)
voltage (2) 0.85 0.85 High level (4)
rtMax. value of on-state 3.00 2.40 Low level (3)
slope resistance (2) 2.90 2.25 High level (4)
V
Max. peak on-state or I
TM
VFMforward voltage I
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V
of rise of turned on 150 A/µs I
current t
I
Max. holding current 250 TJ = 25oC, anode supply = 6V,
H
I
Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
L
(1) I2t for time t
(4) I > π x I
AV
= I2√t
x √tx(2) Average power = V
x
75 95
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms T
1940 2100 t=8.3ms no voltage reapplied
12.56 14.52 t=8.3ms reapplied
9.80 11.25 t=10ms 100% V
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms T
15.60 18.30 t= 8.3ms no voltage reapplied
1.59 1.58 V
x I
T(TO)
T(AV)
, maximum V
RSM
A
KA2s
V
mΩ
mA
+ r
x (I
t
T(RMS)
, max. repetitive I
DRM
o
conduction, half sine wave,
= 85oC
C
or
I
(RMS)
Sinusoidal
half wave,
RRM
Initial T
= 25oC,
J
Initial TJ = TJ max.
RRM
= 25oC,
J
T
= TJ max
J
= TJ max
T
J
= π x I
TM
T(AV)
= π x I
FM
F(AV)
=π x I
T(AV)
, I
TM
< 0.5 µs, tp > 6 µs
r
= 500mA,
g
T
DRM
= 25°C
J
,
resistive load, gate open circuit
2
)
(3) 16.7% x π x I
< I < π x I
AV
= TJ max.
J
AV
RRM
DRM
I
(RMS)
2
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Page 3
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Triggering
Parameters IRK.71 IRK.91 Units Conditions
Max. peak gate power 12 12
P
GM
P
Max. average gate power 3.0 3.0
G(AV)
I
Max. peak gate current 3.0 3.0 A
GM
-V
Max. peak negative
GM
gate voltage
V
Max. gate voltage 4.0 TJ = - 40°C
GT
10
required to trigger 2.5 T
1.7 T
Max. gate current 270 TJ = - 40°C
I
GT
required to trigger 150 mA T
80 T
Max. gate voltage T
V
GD
that will not trigger rated V
Max. gate current T
I
GD
that will not trigger rated V
0.25 V
6mA
Blocking
Parameters IRK.71 IRK.91 Units Conditions
I
Max. peak reverse and
RRM
I
off-state leakage current
DRM
at V
, V
RRM
DRM
RMS isolation voltage V
V
INS
dv/dt Max. critical rate of rise T
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
15 mA T
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
500 V/µs
Thermal and Mechanical Specifications
Parameters IRK.71 IRK.91 Units Conditions
T
Junction operating
J
temperature range
T
Storage temp. range - 40 to 125
stg
Max. internal thermal
R
thJC
resistance, junction 0.165 0.135 Per module, DC operation
to case
R
Typical thermal resistance
thCS
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
180
Sine half wave conduction Rect. wave conduction
o
120
o
IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12
- 40 to 125
0.1
5
when devices operate at different conduction angles than DC)
thJC
o
90
o
60
o
30
W
V
°C
K/W
Nm
180o120
DRM
DRM
applied
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
= 25°C
J
= 125°C
J
= 25°C
J
= 125°C
J
= 125oC,
J
= 125oC,
J
= 125 oC, gate open circuit
J
= 125oC, linear to 0.67 V
J
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
o
o
90
o
60
o
30
DRM
,
°C/W
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3
Page 4
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Ordering Information Table
Device Code
IRK T 91 / 16 A S90
1
2 34
1 - Module type
2 - Circuit configuration (See Circuit Configuration table below)
3 - Current code * *
4 - Voltage code (See Voltage Ratings table)
5 - A : Gen V
6 - dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
5
Outline Table
IRK.92 types
With no auxiliary cathode
6
* * Available with no auxiliary cathode.
To specify change: 71 to 72
91 to 92
e.g. : IRKT92/16A etc.
Dimensions are in millimeters and [inches]
IRKT IRKH IRKL
(4) (5)
(1)
~
+
(2)
-
(3)
K2 G2
K1G1
(7)
(6)
G1
(4) (5)
(1)
~
+
(2)
-
(3)
K1
NOTE: To order the Optional Hardware see Bulletin I27900
4
(1)
~
+
(2)
-
(3)
K2
(7)G2(6)
IRKN
G1
(4) (5)
(1)
-
+
(2)
+
(3)
K1
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Page 5
130
120
IRK.71.. Series
R (DC) = 0.33 K/ W
thJC
130
120
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
110
100
90
30°
80
70
Maximum Allowable Case Temperature (°C)
0 1020304050607080
Co nd uct ion A ngle
60°
90°
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
120
100
80
60
40
20
0
Maximum Average On-st ate Power Loss (W)
180°
120°
90°
60°
30°
RM S Li m it
Conduction Angle
IRK.71.. Series
Per Ju n c t io n
T = 125°C
J
0 1020 304050607080
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
120°
180°
110
Conduction Period
100
90
30°
60°
80
70
Maximum Allowable Case Temperature (°C)
0 20 40 60 80 100 120
90°
120°
180°
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
140
DC
180°
120
120°
100
90°
60°
30°
80
RM S Lim i t
60
40
20
0
Maximum Average On-state Power Loss (W)
0 20 40 60 8 0 100 120
Conduction Period
IRK.71.. Se ries
Pe r Ju n c t i o n
T = 125°C
J
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
DC
1600
At Any Rat ed Load Cond ition And With
1500
1400
1300
1200
1100
1000
Pea k Half Sine Wa ve O n-sta t e Cu rrent (A)
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
Rated V Applied Following Surge.
RRM
900
IRK.71.. Series
800
Per Junction
700
1 10 100
Init ial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
1800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1600
1400
1200
1000
800
IRK.71.. Series
Peak Half Sine Wave On-sta te Current (A)
Per Junction
600
0.01 0.1 1
Pulse Train Duration (s)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
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5
Page 6
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
250
180°
120°
200
90°
60°
30°
150
100
Conduction Angle
50
Maximum Total On-sta te Power Loss (W)
0
0 20 40 60 80 100 120 140 160 180
IRK.71.. Series
To t a l RM S Output Current (A)
Fig. 7 - On-state Power Loss Characteristics
600
500
400
180°
(Sine)
180°
(Rec t)
300
200
2 x IRK.71.. Se ries
100
Maximum Total Power Loss (W)
0
0 20 40 60 80 100 120 140 160 180
Single Phase Bridge
Connected
T = 125°C
J
Total Output Current (A)
Fig. 8 - On-state Power Loss Characteristics
Pe r M o d u l e
T = 1 25 ° C
J
R
0
.
2
t
h
K
S
0
.
3
K
/
W
0
.
4
K
/
W
0
.
5
K
/
W
0
.
7
K
/
W
1
K
/
W
1
.
5
K
/
W
3
K
/
W
/
A
W
=
0
.
1
K
/
W
D
e
l
t
a
R
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
R
t
h
S
A
=
0.1
K/ W
0
.
2
0
.
3
0
.
5
1
K
2
K
/
D
K
/
K
/
W
K
/
/
W
W
e
W
W
lta
R
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
800
700
R
t
h
600
500
400
120°
(Rect)
300
200
Maximum Total Power Loss (W)
100
0
0 40 80 120 160 200 240
3 x IRK.71.. Series
Thre e Ph a se Brid g e
Connect ed
T = 125°C
J
Total Output Current (A)
S
A
=
0
.
1
K
/
0
.
2
K
0
.
3
K
0
.
5
K
1
K
/
W
D
/
W
/
W
/
W
W
e
l
t
a
R
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
6
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Page 7
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
130
120
IRK.91.. Se ries
R ( DC) = 0.27 K/ W
thJC
110
Cond uction Angle
100
90
80
70
Maximum Allowable Case Temperature (°C)
0 20406080100
30°
60°
90°
120°
Average On-state Current (A)
140
180°
120
100
80
120°
90°
60°
30°
RM S Lim it
60
40
20
0
Maximum Average On-sta te Power Loss (W)
0 20406080100
Cond uction A ngle
IRK.91.. Series
Pe r J u nc t io n
T = 125°C
J
Average On-state Current (A)
180°
130
120
IRK.91.. Series
R (DC) = 0.27 K/ W
thJC
110
Conduc tion Period
100
90
80
70
Maximum Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140 160
30°
60°
90°
120°
180°
Average On-state Current (A)
Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics
180
DC
160
180°
120°
140
90°
60°
120
30°
100
RM S Li m i t
80
60
40
20
0
Maximum Average On-state Power Loss (W)
0 20 40 60 80 100 120 140 160
Conduction Period
IRK.91. . Seri es
Pe r Ju n c t io n
T = 125°C
J
Average On-state Current (A)
Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics
DC
1600
At Any Rated Load Condition And With
Rated V Applied Following Surge.
1500
1400
1300
1200
1100
1000
900
IRK.91.. Ser ie s
800
Peak Half Sine Wave On-state Current (A)
Per Junction
700
110100
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
RRM
Init ial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1800
Ma ximum Non Repet itive Surg e Cu rrent
Versus Pulse Train Duration. Co ntrol
Of Conduction May Not Be Maintained.
1600
1400
1200
1000
800
IRK.91.. Series
Peak Ha lf Sine Wave On-state Current (A)
Per Junction
600
0.01 0.1 1
Pulse Train Duration (s)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
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7
Page 8
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
350
300
250
200
150
Conduction Angle
100
50
Maximum Total On-state Power Loss (W)
0
0 40 80 120 160 200 240
Total RMS Output Current (A)
600
500
400
300
200
100
Maximum Total Power Loss (W)
0
0 40 80 120 160 200
180°
120°
90°
60°
30°
IRK.91.. Serie s
Pe r Mo d ule
T = 1 25° C
J
Fig. 16 - On-state Power Loss Characteristics
180°
(Sine)
180°
(Re c t)
2 x IRK.91.. Series
Single Phase Bridge
Connected
T = 125°C
J
To ta l Outp ut Current ( A)
Fig. 17 - On-state Power Loss Characteristics
R
t
h
S
A
0
.
2
=
K
0
/
.
W
1
0
.
3
K
/
W
0
.
5
K
/
0
.
7
K
/
1
K
/
W
1
.
5
K
/
3
K
/
W
K
/
W
D
e
l
t
a
W
W
W
R
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
R
t
h
S
A
=
0
.
1
K
/
0
.
2
K
0
.
3
K
0
.
5
K
1
K
/
2
K
/
W
-
/
W
/
W
/
W
W
W
D
e
l
t
a
R
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
900
800
R
t
700
600
500
120°
(Rect)
400
300
200
Maximum Total Pow er Loss (W)
100
0
0 40 80 120 160 2 00 240 280
3 x IRK.91.. Series
Three Phase Bridge
Connect ed
T = 125°C
J
Total Output Current (A)
h
S
A
=
0
.
1
K
/
W
D
0
.
2
K
0
.
3
K
0
.
5
K
1
K
/
e
l
t
a
/
W
/
W
/
W
W
R
0 20 40 60 80 100 120 140
Maximum Allowa ble Ambient Temperature (°C)
Fig. 18 - On-state Power Loss Characteristics
8
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Page 9
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
1000
100
T = 25 °C
10
Instantaneous On-state Current (A)
1
0.511.522.533.54
J
T = 125° C
J
IRK.71.. Series
Per Junction
Instant aneous On-state Voltage (V)
1000
100
T = 25° C
J
10
Instantaneous On-state Current (A)
1
0.5 1 1.5 2 2. 5 3 3.5
T = 125°C
J
IRK.91.. Series
Pe r Ju nc t io n
Instant aneous On-sta te Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics
700
600
500
400
300
200
IRK.71. . Ser ie s
IRK.91. . Ser ie s
T = 125 °C
J
I = 200 A
TM
100 A
50 A
20 A
10 A
140
120
100
80
60
40
IRK.71.. Series
IRK.91.. Series
T = 125 °C
J
I = 200 A
TM
100 A
50 A
20 A
10 A
100
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of On-state Current - di/dt (A/µs)
1
Steady State Value:
R = 0.33 K/ W
thJC
Transient Thermal Impedance Z (K/W)
thJC
R = 0.27 K/ W
thJC
(DC Operation)
0.1
0.01
0.001 0.01 0.1 1 10
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IRK.71.. Series
IRK.91.. Series
Square Wave Pulse Duration (s)
Fig. 23 - Thermal Impedance Z
Ma ximum Re verse Re co very Curre nt - Irr (A)
Characteristics
thJC
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics
Pe r Ju n c t io n
9
Page 10
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
100
Rect angular gate pulse
a)Recommended load line for
ra ted di / dt : 20 V, 20 oh ms
tr = 0. 5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% ra te d d i/ d t: 15 V, 40 o hms
10
tr = 1 µs, tp >= 6 µs
1
Instantane ous Gate Voltage (V)
VGD
0.1
0.001 0.01 0.1 1 10 100 1000
IGD
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(a)
(b)
TJ = -40 °C
TJ = 2 5 ° C
TJ = 125 °C
IRK.71../ .91.. Series
Instantaneous Gate Current (A)
Frequency Limited by PG(AV)
Fig. 24 - Gate Characteristics
(4) (3) (2) (1)
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/04
10
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