Datasheet IRK.F82 Datasheet (International Rrectifier)

查询IRK.F82.. SERIES供应商查询IRK.F82.. SERIES供应商

Bulletin I27103 rev. A 09/97

IRK.F82.. SERIES

FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR

Features

Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
Industrial standard package
UL E78996 approved

isolating voltage

RMS

Description

These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.

Major Ratings and Characteristics

Parameters IRK.F82.. Units

I

T(AV)

@ T

C

I

T(RMS)

I

TSM

I2t @ 50Hz 24.2 KA2s

2

I
t

q

t

rr

V
T

@ 50Hz 2200 A
@ 60Hz 2300 A

@ 60Hz 22.1 KA

√t 242 KA2√s

range 10 and 15 µs

/ V

DRM

RRM

range - 40 to 125

J

81 A
90 °C

180 A

2

s

2µs

up to 800 V

o

C

INT-A-pakä Power Modules

81 A

www.irf.com

1

IRK.F82.. Series

Bulletin I27103 rev. A 09/97

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

RRM/VDRM

Type number Code peak reverse voltage repetitive peak rev. voltage @ T

IRK.F82.. 30

04 400 400
08 800 800

Current Carrying Capacity

, maximum repetitive V

, maximum non- I

RSM

RRM/IDRM

VVmA

max.

= 125°C

J

I

Frequency f Units

180oel

TM

180oel

I

TM

100µs

I

TM

50Hz 160 265 250 400 2240 3100 A
400Hz 200 320 290 475 1070 1550 A
2500Hz 150 240 260 400 370 550 A
5000Hz 135 215 235 355 235 355 A
10000Hz 90 160 190 275 - - A
Recovery voltage Vr 50 50 50 50 50 50 V
Voltage before turn-on Vd 80% V

DRM

80% V

DRM

80% V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 90 60 90 60 90 60 °C
Equivalent values for RC circuit 22 Ω / 0.15 µF 22 Ω / 0.15 µF 22 Ω / 0.15 µF

On-state Conduction

Parameter IRK.F82.. Units Conditions

Maximum average on-state current 81 A 180° conduction, half sine wave

I

T(AV)

@ Case temperature 90 °C
Maximum RMS current 180 A TC = 90°C, as AC switch

I

T(RMS)

I

Maximum peak, one-cycle, 2200 A t = 10ms No voltage

TSM

non-repetitive surge current 2300 t = 8.3ms reapplied

1850 t = 10ms 100% V
1950 t = 8.3ms reapplied Sinusoidal half wave,

2

t Maximum I2t for fusing 24.2 KA2s t = 10ms No voltage Initial TJ = 125°C

I

22.1 t = 8.3ms reapplied

17.1 t = 10ms 100% V

15.6 t = 8.3ms reapplied

2

√t Maximum I2√t for fusing 242 KA2√s t = 0 to 10ms, no voltage reapplied

I

Low level value of threshold voltage 1.20 V (16.7% x π x I

V

T(TO)1

High level value of threshold voltage 1.24 (I > π x I

V

T(TO)2

r

Low level value of on-state slope resistance 2.18 mW (16.7% x π x I

t1

r

High level value of on-state slope resistance 2.00 (I > π x I

t2

Maximum on-state voltage drop 1.96 V Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse

V

TM

I

Maximum holding current 600 mA T

H

I

Typical latching current 1000 mA T

L

T(AV)

T(AV)

= 25°C, IT > 30 A

J

= 25°C, VA = 12V, Ra = 6Ω, Ig = 1A

J

2

RRM

RRM

< I < π x I

T(AV)

), TJ = TJ max.

< I < π x I

T(AV)

), TJ = TJ max.

), TJ = TJ max.

T(AV)

), TJ = TJ max.

T(AV)

www.irf.com

V

IRK.F82.. Series

Bulletin I27103 rev. A 09/97

Switching

Parameter IRK.F82.. Units Conditions

di/dt Maximum non-repetitive rate of rise 800 A/µs Gate drive 20V, 20Ω, tr ≤ 1m s, VD= 80% V

TJ = 25°C

Maximum recovery time 2 µ s ITM = 350A, di/dt = -25A/µs, V

t

rr

t

Maximum turn-off time N L ITM = 350A, TJ = 125°C, di/dt = -25A/µs,

q

10 15 µs V

Blocking

Parameter IRK.F82.. Units Conditions

dv/dt Maximum critical rate of rise of off-state 1000 V/µs T

voltage
RMS isolation voltage 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s

V

INS

Maximum peak reverse and off-state 30 mA TJ = 125°C, rated V

I

RRM

leakage current

I

DRM

Triggering

Parameter IRK.F82.. Units Conditions

P

Maximum peak gate power 40 W f = 50 Hz, d% = 50

GM

Maximum peak average gate power 2 W TJ = 125°C, f = 50Hz, d% = 50

P

G(AV)

Maximum peak positive gate current 5 A TJ = 125°C, tp < 5ms

I

GM

Maximum peak negative gate voltage 5 V

- V

GM

Max. DC gate current required to trigger 20 0 mA TJ = 25°C, Vak 12V, Ra = 6

I

GT

DC gate voltage required to trigger 3 V

V

GT

DC gate current not to trigger 20 m A TJ = 125°C, rated V

I

GD

DC gate voltage not to trigger 0.25 V

V

GD

= 50V, dv/dt = 400V/µs linear to 80% V

R

= 125°C., exponential to = 67% V

J

DRM/VRRM

applied

DRM

= 50V, TJ = 25°C

R

DRM

applied

DRM

DRM

Thermal and Mechanical Specifications

Parameter IRK.F82.. Units Conditions

TJMax. junction operating temperature range - 40 to 125 °C
T

Max. storage temperature range - 40 to 150

stg

R

Max. thermal resistance, junction to 0.25 K/W Per junction, DC operation

thJC

case
Max. thermal resistance, case to 0.035 K/W Mounting surface flat and greased

R

thC-hs

heatsink Per module

T Mounting torque ± 10% IAP to heatsink 4 - 6 (35 - 53) Nm

busbar to IAP 4 - 6 (35 - 53) (lb*in)

wt Approximate weight 500 (17.8) g (oz)

A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound

www.irf.com

3

IRK.F82.. Series

Bulletin I27103 rev. A 09/97

∆R

Conduction

thJC

(The following table shows the increment of thermal resistance R

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

180° 0.016 0.011 K/W TJ = 125°C
120° 0.019 0.020

90° 0.024 0.026
60° 0.035 0.037

30° 0.060 0.060

Ordering Information Table

Device Code

IRK T F 8 2 - 08 H L N

1 2

1 - Module type
2 - Circuit configuration
3 - Fast SCR
4 - Current rating: I
5 - 1 = option with spacers and longer terminal screws

2 = option with standard terminal screws

6 - Voltage code: Code x 100 = V
7 - dv/dt code: H ≤ 400V/µs
8 -tq code: N ≤ 10µs

L ≤ 15µs

9 - None = Standard devices

N = Aluminum nitrade substrate

x 10 rounded

T(AV)

RRM

when devices operate at different conduction angles than DC)

thJC

3

4

5

6 7 8

(See Voltage Ratings Table)

8

NOTE: To order the Optional Hardware see Bulletin I27900

4

www.irf.com

IRK.F82.. Series

0

)

0

)

Bulletin I27103 rev. A 09/97

Outline Table

- All dimensions in millimeters (inches)

- Dimensions are nominal

- Full engineering drawings are available
on request

- UL identification number for gate and
cathode wire: UL 1385

- UL identification number for package:
UL 94V0

For all types A B C D E

IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85)
IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ----

IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF..

130

120

110

100

90

80

70

Maximum Allowable Case Temperature (°C

0 2040608010

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

IRK.F82.. Series
R (DC) = 0.25 K/W

thJC

Conductio n Angle

30°

60°

90°

120°

180°

www.irf.com

130

120

110

100

90

80

70

Maximum Allowable Case Temperature (°C

0 20 40 60 80 100 120 14

Average On-state Current (A)

IRK.F82.. Series
R (DC) = 0.25 K/W

thJC

30°

60°

90°

Conduction Period

120°

180°

DC

5

IRK.F82.. Series

90

)

0

)

0

)

1

)

t

l

.

8

0

Bulletin I27103 rev. A 09/97

140

180°

120

100

80

120°

90°
60°
30°

RMS Limit

60

Conduction Angle

40

IRK.F82.. Series

20

0

Maximum Average On-state Power Loss (W

0 1020304050607080

Per Junction
T = 125°C

J

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000

Peak Half Sine Wave On-state Current (A)

900

Number Of Equal Amplitude Half Cycle Current Pulses (N

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

IRK.F82.. Series
Per Junction

11010

200

DC

180

180°

160

120°

90°

140

60°

120

30°

100

RMS Limit

80

Con duction Per iod

60
40
20

0

Maximum Average On-state Power Loss (W

0 2040608010012014

IRK.F82.. Series
Per Junction
T = 125°C

J

Average On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

2200

2000

1800

Maximum Non Re p e t it ive Surge Cu rren

Versus Pulse Train Duration. Contro

Of Conduction May Not Be Maintai n ed

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

RRM

1600

1400

1200

1000

IRK.F82.. Series

Peak Half Sine Wave On-state Current (A

Per Junction

800

0.01 0.1
Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

J

10000

T = 25°C

J

T = 125°C

1000

Instantan eous On-state Current (A)

100

1234567

Instantaneous On-state Voltage (V)

Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance Z

J

IRK.F82.. Series
Per Junction

6

1

Stead y St ate Value
R = 0.25 K/W

thJC

(DC Operation)

thJC

0.1

0.01

IRK.F82.. Series
Per Junction

Transient Therm al Impedance Z (K/W)

0.001

0.001 0.01 0.1 1 10 10
Sq uare Wave Pulse Durat i on ( s)

thJC

www.irf.com

Characteristic

IRK.F82.. Series

0

)

s)

0

)

s)

E4

4

E

4

1

4

E

4

Bulletin I27103 rev. A 09/97

160

140

120

100

80

IRK.F82.. Series
T = 125 °C

J

I = 500 A

TM

300 A

200 A

100 A

120
110
100

90
80
70
60

IRK.82.. Series
T = 125 °C

J

I = 500 A

TM

50

60

40

20

10 20 30 40 50 60 70 80 90 10

Maximum Reverse Recovery Charge - Qrr (µC

Rate Of Fall Of On-s t a te Cur ren t - di/ d t ( A/µ

50 A

40
30
20
10

Maximum Reverse Recovery Current - Irr (A

10 20 30 40 50 60 70 80 90 10

Rate Of Fall Of On-state Cu rre n t - di/dt (A/µ

Fig. 9 - Reverse Recovery Charge Characteristic Fig. 10 - Reverse Recovery Current Characteristic

1E4

IRK.F82.. Series
Si n u soi d a l Pu ls e
T = 60 °C

C

tp

1E3

2500

5000

1000

400

Pe ak On -state C u rr en t (A)

Snu bber circuit
R = 22 ohms
C = 0.15 µF
V = 80% V

50 Hz

150

Snu bber circuit
R = 22 ohms
C = 0.15 µF

V = 80% V

150

tp

5000

IRK.F82.. Series
Sinusoid al Puls e
T = 90 °C

C

1000

2500

400

s
s

DRM

D

s
s

D

50 Hz

300 A

200 A

100 A

50 A

DRM

1E2

1E1 1E2 1E3 1

Pulse Basewidth (µs)

1E

11E21E31E

E1

Pulse Basewi dth (µs)

Fig. 11 - Frequency Characteristics

1E4

IRK.F82.. Series
Tr a p e z oi d al Pulse
T = 60 °C, di/dt 50A/µs

tp

C

1E3

400

1000

2500

Peak On-state Current (A)

1E2

1E1 1E2 1E3 1E

5000

Pulse Basewi dth (µs)

150

Snu bber circuit
R = 22 ohms

s

C = 0.15 µF

s

V = 80% V

D

50 Hz

DRM

IRK.F82.. Series
Trapezoidal Pulse
T = 60 °C, di/dt 100A/µs

tp

C

400

1000

2500

5000

1E4

11E21E31E

1E1

Snubber circuit
R = 22 ohms
C = 0.15 µF
V = 80% V

50 Hz

150

s
s

D

DRM

Pulse Basewi dth (µs)

Fig. 12 - Frequency Characteristics

www.irf.com

7

IRK.F82.. Series

E4

E

4

1

E4

E

4

1

0

Bulletin I27103 rev. A 09/97

1E4

IRK.F82.. Series
Trapezoidal Pulse
T = 90 °C, di/dt 50A/µs

tp

C

1E3

150

400

1000

Peak On-state Current (A)

1E2

1E1 1E2 1E3 1

2500

5000

Snubber circuit
R = 22 ohms
C = 0. 15 µF

V = 80% V

50 Hz

s
s

D

Pulse B asewidth (µs)

Fig. 13 - Frequency Characteristics

1E4

10 jo ules per pulse

5

2.5

1

0.05

0.5

0.25

0.1

1E3

0.01

1E2

Peak On-state Current (A)

IRK.F82.. Series
Sinusoidal pu ls e

tp

1E1

1E1 1E2 1E3 1

Pulse Basewidth (µs)

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

DRM

IRK.F82.. Series
Trapezoidal Pulse
T = 90 °C, di/dt 100A/µs

tp

C

400

1000

2500

5000

1E4

11E21E31E

E1

Snubber circ uit
R = 22 ohms
C = 0.15 µF

V = 80% V

150

s
s

D

50 Hz

DRM

Pulse Basewi dth (µs)

10 joules per pulse

5

2.5

1

0.5

0.25

0.1

0.05

IRK.F82.. Series
Trapezoida l Pulse

tp

di/dt 50A /µs

11E21E31E

E1

1E4

Pulse Basewidth (µs)

100

Rectangular gate pul se
a) Recommended load li ne fo r
rated di/dt : 20 V, 10 ohms tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10 V, 10 ohms

10

tr<=1 µs

(b)

Tj=25 °C

Tj=125 °C

(a)

Tj=- 40 °C

(1) PGM = 10W, tp = 10ms
(2) PGM = 20W, tp = 5ms
(3) PGM = 40W, tp = 2.5ms

1

(1)

(2)

VGD

Instantaneous Gate Voltage (V)

0.1

IGD

IR K.F 8 2 .. Seri es Frequenc y Lim it ed by PG(A V )

0.01 0.1 1 10 10

(3)

Instantan eous Gate Curr ent (A)

Fig. 15 - Gate Characteristics

8

www.irf.com