Datasheet IRFV260 Datasheet (International Rectifier)

HEXFET

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Provisional Data Sheet No. PD-9.2002

IRFV260

N-CHANNEL

200 Volt, 0.060

ΩΩ

Ω, HEXFET

ΩΩ

HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis­tors. The efficient geometry design achieves very
low on-state resistance combined with high trans­conductance.

HEXFET transistors also feature all of the well-es­tablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits and virtually
any application where high reliability is required.

The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter IRFV260 Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 45*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 29

I

DM

PD @ TC = 25°C Max. Power Dissipation 300 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  4.3

T

J

T

STG

* ID current limited by pin diameter

Pulsed Drain Current  180

Linear Derating Factor 2.4 W/K 
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy  700 m J
Avalanche Current  45 A
Repetitive Avalanche Energy  30 m J

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10 sec.)

Weight 10.9 (typical) g

Product Summary

Part Number BVDSS RDS(on) ID

IRFV260 200V 0.060Ω 45A*

Features:

n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets

A

V/ns

o

C

IRFV260 Device

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

DSS

Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0 mA

/∆TJTemp. Coefficient of Breakdown Voltage — 0.24 — V/°C Reference to 25°C, ID = 1.0 mA

Static Drain-to-Source — — 0.060 VGS = 10V, ID =29A 
On-State Resistance — — 0.068
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 22 — — S ( )VDS ≥ 15V, IDS = 29A 
Zero Gate Voltage Drain Current — — 25

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 230 VGS =10V, ID = 45A
Gate-to-Source Charge — — 40 nC VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 110
Tu rn-On Delay Time — — 29 VDD = 100V, ID =45A,
Rise Time — — 120 ns RG = 2.35Ω, VGS =10V
Tur n-Off Delay Time — — 110
Fall Time — — 92
Internal Drain Inductance — 8.7 —

Internal Source Inductance — 8.7 —

Ω

VDS=0.8 x Max Rating,VGS=0V

µA

nA

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the

nH

source lead, 6mm
(0.25 in.) from package
to source bonding pad.

VGS = 10V, ID = 45A

VGS = 0V, TJ = 125°C

VGS = 20V

Modified MOSFET
symbol showing the

internal inductances.

C
C
C

iss
oss
rss

Input Capacitance — 5100 — VGS = 0V, VDS = 25V
Output Capacitance — 1100 — pF f = 1.0 MHz
Reverse Transfer Capacitance — 280 —

IRFV260 Device

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Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 45* Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode)  — — 180 A integral rev erse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 45A, VGS = 0V 

SD

t

Reverse Recovery Time — — 420 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs

rr

QRRReverse Recovery Charge — — 4.9 µCV

t

Forward Turn-On Time

on

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

≤ 50V 

DD

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R
R
R

thJC
thJA
thCS

Junction-to-Case — — 0.42
Junction-to-Ambient — — 30
Case-to-Sink — 0.21 — mounting surface flat, smooth

K/W 

typical socket mount

 Repetitive Rating; Pulse width limited by

maximum junction temperature.

 @ V

= 50V, Star ting TJ = 25°C,

DD
EAS = [0.5 * L * (I
Peak IL = 45A, VGS = 10V, 25 ≤ RG ≤ 200Ω

2

) * [BV

L

DSS

/(BV

DSS-VDD

 I

≤ 45A, di/dt ≤ 130 A/ µs,

SD
VDD ≤ BV
Suggested RG = 2.35Ω

)]

 Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
 K/W = °C/W

W/K = W/°C

, TJ ≤ 150°C

DSS

Case Outline and Dimensions — T O-258AA

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IRFV260 Device

NOTES:

1. Dimensioning and tolerancing per ANSI Y14.5M - 1982.

2. All dimensions in millimeters (inches)

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which will
produce beryllia or beryllium dust. Furthermore, beryllium oxides
packages shall not be placed in acids that will produce fumes
containing beryllium.

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CAUTION

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http://www.irf.com/ Data and specifications subject to change without notice. 7/96

LEGEND:

1. Drain

2.. Source

3. Gate

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