Page 1
IRFR410, IRFU410
Data Sheet July 1999 File Number
1.5A, 500V, 7.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17445.
Ordering Information
PART NUMBER PACKAGE BRAND
IRFU410 TO-251AA IFU410
IRFR410 TO-252AA IFR410
NOTE: When ordering, use the entire part number.
Features
• 1.5A, 500V
DS(ON)
= 7.000Ω
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
o
C Operating Temperature
• 150
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
3372.2
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
S
DRAIN (FLANGE)
4-401
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
IRFR410, IRFU410
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFR410, IRFU410 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
D
DM
GS
D
500 V
500 V
1.5
1.2
3.0 A
±20 V
42 W
A
A
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 W/oC
Single Pulse Avalanche Rating (See Figure 5) (Note 4) . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
Refer to UIS Curve mJ
-55 to 150
300
260
o
o
o
C
C
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Temperature Coefficient of
Breakdown Voltage
Gate to Source Threshold Voltage V
V
DSS
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 3) r
DS(ON)ID
Forward Transconductance (Note 3) g
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
g(TOT)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
∆B-
/∆T
J
DSS
GSS
fs
r
f
gs
gd
ISS
OSS
RSS
= 250µA, VGS = 0V 500 - - V
Reference to 25oC, ID = 250µA - 0.61 - V/oC
= VDS, ID = 250µA 2-4V
VDS = 500V, VGS = 0V - - 25 µA
VDS = 500V, VGS = 0V, TJ = 125oC - - 250 µA
VGS = ±20V - - ±100 nA
= 1.5A, VGS = 10V, (Figure 9) - - 7.000 Ω
VDS = 50V, IDS = 0.75A, (Figure 8) 0.5 - - S
VDD= 250V, ID≈ 1.5A, RGS=24Ω,RL= 167Ω,
-7-ns
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-10-ns
-24-ns
-15-ns
VGS= 10V, ID ≈ 1.5A, VDS = 0.8 x Rated BV
DSS
,
- 9 12 nC
(Figure 12)
Gate Charge is Essentially Independent of
Operating Temperature
VGS = 0V, VDS = 25V, f = 1.0MHz,
- 1.1 1.4 nC
-57nC
- 210 - pF
(Figure 10)
-30-pF
-7-pF
4-402
Page 3
IRFR410, IRFU410
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulse Source to Drain Current
(Note 3)
I
SDM
SD
Measured From the
D
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Measured From The
S
Source Lead, 6mm
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
- 4.5 - nH
- 7.5 - nH
(0.25in) From Header
to Source Bonding Pad
θJC
Free Air Operation - - 110
θJA
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
L
S
S
- - 3.0
D
- - 1.5 A
- - 3.0 A
G
o
o
C/W
C/W
S
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
TJ = 25oC, ISD = 1.5A, VGS = 0V, (Figure 11) - - 2.0 V
SD
TJ = 25oC, ISD = 1.5A, dISD/dt = 100A/µs 130 - 520 ns
rr
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
4. VDD = 50V, starting TJ= 25oC, L = 40µH, RG = 25Ω, peak IAS = 1.5A.
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
2.0
1.5
1.0
, DRAIN CURRENT (A)
0.5
D
I
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (oC)
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4-403
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Page 4
IRFR410, IRFU410
Typical Performance Curves
Unless Otherwise Specified (Continued)
1
0.5
0.2
0.1
0.1
0.05
NORMALIZED TRANSIENT
θJC,
Z
THERMAL IMPEDANCE
-1
10
0.02
0.01
SINGLE PULSE
-5
10
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
TJ = MAX RATED, SINGLE PULSE
TC = 25oC
1
0.10
DRAIN CURRENT (A)
0.01
1 10 100 1000
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
DRAIN TO SOURCE VOLTAGE (V)
-3
10
-2
10
t1, RECTANGULAR PULSE DURATION (s)
5.0
I
DM
100µs
1ms
10ms
DC
, (A)
AS
I
1.0
IF R = D
t
AV
IF R ≠ D
t
AV
0.5
0.5 0.010 0.100 1
P
DM
NOTES:
DUTY FACTOR D = t
TJ = PDM x Z
0.1
= (L)(IAS)/(1.3 RATED BV
DSS
1
- VDD)
= (L/R) IN [(IDS X R)/(1.3 RATED BV
t
, TIME IN AVALANCHE (ms)
AV
t
1
t
2
1/t2
x R
θJC
+ T
C
θJC
10
STARTING TJ = 25oC
STARTING TJ = 150oC
- VDD) + 1]
DSS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING
3
TOP 10V
1
BOTTOM 4.5V
, DRAIN CURRENT (A)
D
I
V
GS
8.0V
7.0V
6.0V
5.5V
5.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 25oC
T
0.1
0.1 1 10 100 500
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
C
3
TOP
1
BOTTOM 4.5V
, DRAIN CURRENT (A)
D
I
V
GS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 150oC
T
0.1
0.1 1 10 100 500
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
C
FIGURE 6. OUTPUT CHARACTERISTICS, TC = 25oC FIGURE 7. OUTPUT CHARACTERISTICS, TC = 150oC
4-404
Page 5
IRFR410, IRFU410
Typical Performance Curves
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 30V
V
DS
1
, DRAIN CURRENT (A)
D
I
0.1
345678
, GATE VOLTAGE (V)
V
GS
Unless Otherwise Specified (Continued)
25oC
150oC
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TOSOURCE ON
300
250
C
ISS
200
VGS = 0V, f = 1MHz
= CGS + C
C
C
RSS
C
C
C
ISS
RSS
OSS
OSS
= C
≈ CDS + C
150
100
C, CAPACITANCE (pF)
50
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
GD
GD
GD
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 1.5A, VGS = 10V
I
D
2
1
ON RESISTANCE
NORMALIZED DRAIN TO SOURCE
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
RESISTANCE vs JUNCTION TEMPERATURE
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 0V
V
GS
1
, SOURCE TO DRAIN CURRENT (A)
SD
I
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
150oC
25oC
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 1.5A
18
12
8
4
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VDS = 400V
V
= 250V
DS
V
= 100V
DS
Q
, TOTAL GATE CHARGE (nC)
g(TOT)
FIGURE 12. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-405
Page 6
IRFR410, IRFU410
Test Circuits and Waveforms
V
DS
BV
DSS
L
VARY t
TO OBTAIN
P
REQUIRED PEAK I
V
GS
AS
R
G
+
V
DD
-
DUT
0V
P
I
AS
0.01Ω
0
t
FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
t
P
I
AS
t
AV
V
DS
V
DD
t
ON
t
d(ON)
t
R
L
+
V
R
G
DD
-
V
DS
90%
0
r
10%
DUT
V
GS
V
GS
10%
0
50%
PULSE WIDTH
FIGURE 15. SWITCHING TIME TEST CIRCUIT FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
V
DS
12V
BATTERY
0
0.2µF
50kΩ
I
G(REF)
CURRENT
REGULATOR
0.3µF
G
IG CURRENT
SAMPLING
RESISTOR RESISTOR
SAME TYPE
AS DUT
D
DUT
S
CURRENT
I
D
SAMPLING
(ISOLATED
SUPPLY)
V
DS
V
DD
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
I
G(REF)
0
t
d(OFF)
90%
V
GS
t
OFF
50%
t
f
90%
10%
FIGURE 17. GATE CHARGE TEST CIRCUIT FIGURE 18. GATE CHARGE WAVEFORMS
4-406
Page 7
IRFR410, IRFU410
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Intersil semiconductor products are sold by description only. Intersil Corporationreserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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4-407
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