Datasheet IRF7842PBF Datasheet

A

:

Absolute Maximum Ratings

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

c

Power Dissipation

f

Power Dissipation

f

Thermal Resistance

Junction-to-Drain Lead

g

Junct ion-to-Ambient

fg

IRF7842PbF

Standard Pack

Applications

l Synchronous MOSFET for Notebook

Processor Power

l Secondary Synchronous Rectification

for Isolated DC-DC Converters

l Synchronous Fet for Non-Isolated

DC-DC Converters

l Lead-Free

Benefits

l Very Low R l Low Gate Charge l Fully Characterized Avalanche Voltage

DS(on)

at 4.5V V

GS

and Current

Base Part Number

IRF7842PbF SO-8

V

DS

V

GS

I

@ TA = 25°C

D

@ TA = 70°C

I

D

I

DM

PD @TA = 25°C

P

@TA = 70°C

D

T

J

T

STG

Package Type

Tape and Reel 4000 IRF7842TRPbF

Parameter Units

Drain-to-Source Voltage V

Gate-to-Source Voltage

Continuous Drain Current, V

Linear Derating Factor W/°C Operating Junction and °C

Storage Temperature Range

@ 10V

GS

HEXFET® Power MOSFET

V

DSS

40V

1

S

2

S

3

S

4

Top View

Form Quantity

Tube/Bulk 95 IRF7842PbF

5.0m

R

DS(on)

max

@VGS = 10V

A

8

D

7

D

6

D

5

DG

Orderable Part Number

Max.

40

± 20

18

14

140

2.5

1.6

0.02

-55 to + 150

Qg (typ.)

33nC

SO-8

A

W

R

JL

θ

R

JA

θ

Notes  through  are on page 10

Parameter Typ. Max. Units

––– 20 °C/W

––– 50

Static @ TJ = 25°C (unless otherwise specified)

DSS

J

DS(on)

GS(th )

GS(th)

DSS

GSS

g

gs1

gs2

gd

godr

sw

gs2

oss

G

d(on)

r

d(off)

f

iss

oss

rss

AS

AR

S

SM

(Body Diode)

c

SD

rr

D

GS

DS

GS

Typ.

DS

GS

DS

J

showing the

p-n junction diode.

Conditions

D

GS

DS

DD

DS

Conditions

Max.

Parameter Min. Typ. Max. Units

BV

ΔΒV

/ΔT

R

V

ΔV

I

gfs Forward Transconductance 81 ––– ––– S

Q

R

t

C

Avalanche Characteristics

E

I

Diode Characteristics

I

Drain-to-Source Breakdown Voltage 40 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C

Static Drain-to-Source On-Resis tance ––– 4.0 5.0

––– 4.7 5.9

Gate Threshold Voltage 1.35 ––– 2.25 V

Gate Threshold Voltage Coefficient ––– - 5.6 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– 1.0 μA

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 33 50

Pre-Vth Gate-to-Source Charge ––– 9.6 –––

Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC

Gate-to-Drain Charge ––– 10 –––

Gate Charge Ov erdrive ––– 10.6 –––

Switch Charge (Q

+ Qgd) ––– 12.8 –––

Output Charge ––– 18 ––– nC

Gate Resis tance ––– 1.3 2.6 Ω

Turn-On Delay Time ––– 14 –––

Rise Time ––– 12 –––

Turn-Off D elay Time ––– 21 ––– ns

Fall Time ––– 5.0 –––

Input Capacitance ––– 4500 –––

Output Capacitance ––– 680 ––– pF

Revers e Transfer Capacitance ––– 310 –––

Parameter Units

Single Pulse Avalanche Energy

Avalanche Current

c

d

–––

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 3.1

(Body Diode) A

Pulsed Source C urrent ––– ––– 140

IRF7842PbF

VGS = 0V, ID = 250μA

Reference to 25°C, I

mΩ

V

= 10V, ID = 17A

V

= 4.5V, ID = 14A

V

= VGS, ID = 250μA

V

= 32V, VGS = 0V

V

= 32V, VGS = 0V, TJ = 125°C

= 20V

V

= -20V

= 20V, ID = 14A

V

= 20V

VGS = 4.5V

I

= 14A

V

= 16V, VGS = 0V

V

= 20V, VGS = 4.5V

ID = 14A

Clamped Inductive Load

= 0V

V

= 20V

ƒ = 1.0MHz

50

14

MOSFET symbol

integral reverse

= 1mA

e

mJ

A

V

t

Q

Diode Forward Voltage ––– ––– 1.0 V

Revers e Rec overy Time ––– 99 150 ns

Revers e Rec overy Charge ––– 11 17 nC

TJ = 25°C, IS = 14A, VGS = 0V

= 25°C, IF = 14A, VDD = 20V

T

di/dt = 100A/μs

e

IRF7842PbF

1000

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

2.5V

TOP 10V

BOTTOM 2.5V

≤

60μs PULSE WIDTH

Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000.0

)

Α

(

t

100.0

n e

r

r u

C e

c

r

10.0

u o S

o

t

n

i a

r

1.0

D ,

D

I

0.1

TJ = 150°C

TJ = 25°C

V

= 25V

DS

≤

60μs PULSE WIDTH

1.5 2.0 2.5 3.0 3.5 4.0

VGS, Gate-to-Source Voltage (V)

VGS

5.0V

4.5V

3.5V

3.3V

3.0V

2.8V

1000

) A

( t n e

r

100

u C e

c

r u o S

o

t

-

10

n

i a

r D

,

D

I

2.5V

≤

60μs PULSE WIDTH

Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

)

c

d

r

e

u

z

i

o

l

S

a

m

o

t

r

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

ID = 18A

V

= 10V

GS

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 2.5V

VGS

5.0V

4.5V

3.5V

3.3V

3.0V

2.8V

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF7842PbF

100000

) F

10000

p

( e

c n a

t

i c a p a

C

1000

, C

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

Ciss

Coss

+ Cgd, C

+ C

Crss

100

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

12

SHORTED

ds

gd

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

ID= 14A

10

VDS= 30V

VDS= 20V

8

6

4

S G

2

0

0 20406080

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000.0

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

) A

( t

100.0

n e

r

r u

C n

i a

r

10.0

D e

s

r e v e

R ,

1.0

D S

I

TJ = 150°C

TJ = 25°C

0.1

0.2 0.4 0.6 0.8 1.0 1.2

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D ,

I

D

1

Tc = 25°C Tj = 150°C

1msec

10msec

Single Pulse

0.1 0 1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

IRF7842PbF

τ

18

16

14

) A

(

12

t n e

r

10

u C n

i

8

a

r D

,

6

D

I

4

2

0

25 50 75 100 125 150

TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

2.4

) V

(

2.0

e g a

t

l o V

d

l

1.6

o h s e

r h

t

1.2

e

t a

G

) h

t

(

0.8

S G

V

0.4

-75 -50 -25 0 25 50 75 100 125 150

ID = 250μA

TJ , Temperature ( °C )

Fig 10. Threshold Voltage Vs. Temperature

100

D = 0.50

10

)

A J h

t

1

Z (

e s n o

0.1

p s e

R l a

0.01

m

r e h T

0.001

0.0001

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

τ

R

2

3

R

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

C

10.48 0.138167

τ

3

26.83 1.8582

τ

3

12.69 44.8

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

A

)

Ω

16

m

( e

c n a

t s

i

12

s e

R n O e

c

r

8

u o S

o

t

n

i a

4

r D ,

) n o

(

S

0

D

R

2.0 4.0 6.0 8.0 10.0

TJ = 125°C

TJ = 25°C

VGS, Gate-to-Source Voltage (V)

ID = 18A

IRF7842PbF

200

) J

m

( y

g

r

160

e n E

e h c

120

n a

l a v A

e s

80

l u P

e

l g n

i

40

S

, S A

E

0

25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

I

TOP

D

6.7A

7.5A

BOTTOM

14A

Fig 12. On-Resistance Vs. Gate Voltage

Fig 13c. Maximum Avalanche Energy

Vs. Drain Current

R

V

20V

15V

V

DS

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

DRIVER

+

V

DD

-

V

GS

Pulse Width < 1μs

Duty Factor < 0.1%

L

D.U.T

D

V

DD

Fig 13a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 13b. Unclamped Inductive Waveforms

Fig 14a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 14b. Switching Time Waveforms

+

-

IRF7842PbF





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

12V

.2μF

.3μF

D.U.T.

+

V

DS

-

Vgs(th)

V

GS

3mA

I

G

Current Sampling Resistors

Fig 16. Gate Charge Test Circuit

I

D

Qgs1

Qgs2 Qgd Qgodr

Fig 17. Gate Charge Waveform

Id

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

D B

A

87

6

E

e

6X

5

65

4312

e1

0.25 [.010] A

A

IRF7842PbF

.0688

.0098

.020

.1968

.1574

.2440

.0196

.050

8°

MILLIMETERSINCHE S

MI N MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 B ASIC

5.80

6.20

0.25

0.50

0.40

1.27

8°

0°

DIM

MI N MAX

A

.0532

A1

.0040

b

.013

H

C

y

c .0075 .0098 0.19 0.25

D

.189

E

.1497

e

.050 BAS IC

.025 BAS IC 0.635 B AS IC

e1

H

.2284

K

.0099

L

.016

y

0°

K x 45°

0.25 [.010]

NOTES:

1. DIMENS IONING & T OLE R ANCING PER ASME Y14.5M-1994.

2. CONTROLL ING DIMENS ION: MILL IME T ER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OU T LI NE CONF ORMS T O J E DE C OUT LINE MS -01 2AA.

5 DI MENS ION DOES NOT INCLU DE MOLD PR OT R US I ONS. MOLD P ROT RUS IONS NOT T O EXCEED 0.15 [.006].

6 DI MENS ION DOES NOT INCLU DE MOLD PR OT R US I ONS. MOLD P ROT RUS IONS NOT T O EXCEED 0.25 [.010].

7 DIMENS ION IS T HE L E NGT H OF LE AD FOR S OLDE RING T O A SU B S TR ATE .

SO-8 Part Marking

EXAMPLE : T HIS IS AN IRF7101 (MOS F E T)

INTERNATIONAL

RE CTIFIER

LOGO

8X b

A1

CAB

F 7101

0.10 [.004]

XXXX

8X L

7

6.46 [.255]

3X 1.27 [.050]

8X c

FOOTPRINT

8X 0.72 [.028]

8X 1.78 [.070]

DAT E CODE (YWW) P = DE S IGNAT E S L E AD - F RE E

PRODUCT (OPTIONAL)

Y = LAS T DIGIT OF T H E YEAR WW = WE E K A = ASSEMBLY SITE CODE

LOT CODE

PART NUMBER

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

IRF7842PbF

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONT ROLLING DIMENSION : MILLIMET ER.

2. AL L DIMENSION S ARE SHO WN IN MIL LIMETERS (INCHES).

3. OUTLINE CONFORMS T O EIA-481 & EIA-5 41.

330.00 (12.992) MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONF ORMS TO EIA-481 & EIA-541.

FEED DIRECTION

Note: For the most current drawing please refer to IR website at:

14.40 ( . 566 )

12.40 ( . 488 )

http://www.irf.com/package/

IRF7842PbF

MS L 1

(per JE DE C

J-S TD-020D

)

RoHS c ompli ant

Yes

Qualificat ion information

Cons umer

•

†

Qualific ation level

Moisture Sensitivity Level SO-8

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

Applicable version of JEDEC standard at the time of product release

††

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 0.5mH

J

= 14A.

AS

(per JEDEC JESD47F†† guidelines)

 When mounted on 1 inch square copper board  R

is measured at TJ approximately 90°C

θ

††

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

Revision History

Date Comment

Updated data sheet based on corporate template.

•

7/8/2014

Added Qual level on page10. Added ordering information on page1 Updated Max RG from "TBD" to "2.6Ohm" on page2.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

Datasheet IRF7842PBF Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual