Datasheet IRF7704 Datasheet (International Rectifier)

PD- 94160

IRF7704

HEXFET® Power MOSFET

l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.1mm) l Available in Tape & Reel

Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,

with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.

provides thedesigner

V

DSS

R

DS(on)

max (m

Ω)Ω)

Ω) I

Ω)Ω)

-40V 46@VGS = -10V -4.6A 74@VGS = -4.5V -3.7A

1 2 3 4

1 = D 2 = S 3 = S 4 = G

G

8

D

7 6

S

5

8 = D 7 = S 6 = S 5 = D

TSSOP-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.6 ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -3.7 A I

DM

PD @TA = 25°C Power Dissipation  1.5 PD @TA = 70°C Power Dissipation  1.0

V

GS

T

J, TSTG

Drain- Source Voltage -40 V

Pulsed Drain Current  -19

W

Linear Derating Factor 12 mW/°C Gate-to-Source Voltage ± 20 V Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

www.irf.com 1

3/19/01

IRF7704

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -40 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 46 VGS = -10V, ID = -4.6A  ––– ––– 74 VGS = -4.5V, ID = -3.7A 

mΩ

Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA Forward Transconductance 7.2 ––– ––– S VDS = -10V, ID = -4.6A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -10 VDS = -32V, VGS = 0V ––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 25 38 ID = -4.6A Gate-to-Source Charge ––– 10 15 nC VDS = -15V Gate-to-Drain ("Miller") Charge ––– 9.5 14 VGS = -4.5V Turn-On Delay Time ––– 25 ––– VDD = -20V  Rise Time ––– 360 ––– ID = -1.0A Turn-Off Delay Time ––– 190 ––– RG = 6.0Ω

ns

Fall Time ––– 100 ––– VGS = -4.5V Input Capacitance ––– 3150 ––– VGS = 0V Output Capacitance – –– 250 ––– pF VDS = -25V Reverse Transfer Capacitance ––– 20 0 ––– ƒ = 1.0kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

–––

-1.5

-19

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V  Reverse Recovery Time ––– 29 44 ns TJ = 25°C, IF = -1.5A Reverse Recovery Charge ––– 41 62 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on 1 in square Cu board

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

2 www.irf.com

D

S

IRF7704

1000

100

10

1

0.1

D

-I , Drain-to-Source Current (A)

0.01

0.1 1 10 100

VGS

TOP

-15V

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

BOTTOM

-2.7V

-2.70V

20µs PULSE WIDTH T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100.0

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-15V

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

BOTTOM

-2.7V

-2.70V

20µs PULSE WIDTH T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.0

I =

D

4.6A

)

(Α

10.0

TJ = 150°C

1.0

TJ = 25°C

0.1

, Drain-to-Source Current

D

-I

0.0

2.5 3.0 3.5 4.0 4.5 5.0

-VGS, Gate-to-Source Voltage (V)

V

= -25V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

-10V

GS

°

Vs. Temperature

www.irf.com 3

IRF7704

5000

4000

Ciss

3000

2000

C, Capacitance(pF)

1000

Coss

0

Crss

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

SHORTED

ds

12

I =

-4.6A

D

10

8

6

4

GS

2

-V , Gate-to-Source Voltage (V)

0

0 10 20 30 40 50 60

Q , Total Gate Charge (nC)

G

V =-32V

DS

V =-20V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

10

°

T = 150 C

J

1

°

T = 25 C

SD

-I , Reverse Drain Current (A)

0.1

0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

10

100µsec

1msec

1

, Drain-to-Source Current (A)

D

Tc = 25°C

-I

Tj = 150°C Single Pulse

0.1

0.1 1 10 100 1000

-V

, Drain-toSource Voltage (V)

DS

10msec

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF7704

5.0

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

D.U.T.

D

-

+

V

DD

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

t

V 10%

d(on)tr

GS

°

90% V

DS

t

d(off)tf

Fig 10b. Switching Time Waveforms

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJA A

P

DM

t

1 2

1

t

2

Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7704

)

0.08

Ω

0.06

0.04

ID = -4.6A

, Drain-to -Source On Resistance (

DS(on)

0.02

R

0.0 4.0 8.0 12.0 16.0

-V

Gate -to -Source Voltage (V)

GS,

Fig 11. Typical On-Resistance Vs. Gate

Voltage

)

0.070

Ω

0.060 V

= -4.5V

GS

0.050

0.040

V

= -10V

, Drain-to-Source On Resistance (

0.030

DS (on)

R

0.020

GS

048121620

-ID , Drain Current (A)

Fig 12. Typical On-Resistance Vs. Drain

Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

12V

.2µF

V

GS

.3µF

D.U.T .

-3mA

I

G

Current Sampling Resistors

I

V

DS

+

D

6 www.irf.com

IRF7704

3.0

2.5

ID = -250µA

2.0

Gate threshold Voltage (V)

GS(th)

-V

1.5

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 14. Threshold Voltage Vs. Tempera-

ture

80

60

40

Power (W)

20

0

0.001 0.010 0.100 1.000 10.000 100.000

Time (sec)

Fig 15. Typical Power Vs. Time

www.irf.com 7

IRF7704

TSSOP-8 Package Outline

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 3/01

8 www.irf.com