Page 1
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Conv erters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
R
, gate charge and Cdv/dt-induced turn-on immunity .
DS(on)
The IRF7811W offers particulary low R
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
and high Cdv/
DS(on)
PD-94031A
IRF7811W
1
S
2
S
3
S
4
SO-8
DEVICE CHARACTERISTICS
IRF7811W
R
(on)
DS
Q
G
Q
sw
Q
oss
9.0mΩ
18nC
5.5nC
12nC
Top View
A
8
D
7
D
6
D
5
DG
Absolute Maximum Ratings
Parameter Symbol IRF7811W Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain or Source T
Current (V
≥ 4.5V) TL = 90°C 13 A
GS
= 25°C I
A
Pulsed Drain Current I
Power Dissipation T
= 25°C P
A
T
= 90°C 3.0
L
Junction & Storage Temperature Range T
Continuous Source Current (Body Diode) I
Pulsed Source Current I
DS
GS
D
DM
D
J, TSTG
S
SM
30 V
±12
14
109
3.1 W
–55 to 150 °C
3.8 A
109
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient R
Maximum Junction-to-Lead R
θJA
θJL
40 °C/W
20 °C/W
3/13/01
Page 2
IRF7811W
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BV
Breakdown Voltage
Static Drain-Source R
on Resistance
Gate Threshold Voltage V
Drain-Source Leakage I
Current
Current* 150 µA V
Gate-Source Leakage I
Current
DSS
GSS
Total Gate Chg Cont FET Q
Total Gate Chg Sync FET Q
Pre-Vth Q
Gate-Source Charge
Post-Vth Q
Gate-Source Charge
Gate to Drain Charge Q
Switch Chg(Q
+ Qgd) Q
gs2
Output Charge Q
Gate Resistance R
Turn-on Delay Time t
Rise Time t
d (on)
r
Tur n-off Delay Time td
Fall Time t
f
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
30 – – V VGS = 0V, ID = 250µA
DSS
DS
GS(th)
(on)
9.0 12 mΩ VGS = 4.5V, ID = 15A
1.0 V VDS = VGS,ID = 250µA
30 VDS = 24V, VGS = 0
DS
Tj = 100°C
±100 nA VGS = ±12V
G
G
GS1
GS2
GD
sw
oss
G
18 24 VGS=5.0V, ID=15A, VDS=16V
15.6 VGS = 5V, VDS< 100mV
6.0 VDS = 16V, ID = 15A
1.4 nC
4.1
5.5
12 VDS = 16V, VGS = 0
2.0 Ω
11 VDD = 16V, ID = 15A
11 ns VGS = 5.0V
(off)
29 Clamped Inductive Load
9.9
iss
oss
rss
– 2335 –
– 400 – pF VDS = 16V, VGS = 0
– 119 –
= 24V, VGS = 0,
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward V
Voltage*
Reverse Recovery Q
Charge
Reverse Recovery Q
SD
rr
rr(s)
1.25 V IS = 15A, VGS = 0V
45 nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
41 nC di/dt = 700A/µs
Charge (with Parallel (with 10BQ040)
Schottky) VDS = 16V, VGS = 0V, IS = 15A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q
measured at VGS = 5.0V , IF = 15A.
oss
OSS
2 www.irf.com
Page 3
IRF7811W
2.0
1.5
1.0
15A
I =
D
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 1. Normalized On-Resistance
Vs. Temperature
)
0.020
Ω
0.015
ID = 15A
0.010
, Drain-to -Source On Resistance (
V =
4.5V
GS
°
6.0
ID= 15A
V
= 16V
DS
4.0
2.0
, Gate-to-Source Voltage (V)
GS
V
0.0
0 4 8 12 16 20
QG, Total Gate Charge (nC)
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
4000
3000
2000
C, Capacitance(pF)
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
C
= C
rss
C
= C
oss
Ciss
Coss
+ Cgd, C
gs
gd
+ C
ds
gd
SHORTED
ds
DS(on)
0.005
R
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
Gate -to -Source Voltage (V)
GS,
Fig 3. On-Resistance Vs. Gate Voltage
0
1 10 100
Fig 4. Typical Capacitance Vs.
Crss
VDS, Drain-to-Source Voltage (V)
Drain-to-Source Voltage
www.irf.com 3
Page 4
IRF7811W
100
°
T = 150 C
J
10
°
T = 25 C
1
D
I , Drain-to-Source Current (A)
0.1
2.5 3.0 3.5 4.0 4.5 5.0
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 5. Typical Transfer Characteristics
100
°
T = 150 C
J
10
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
D = 0.50
thJA
10
0.20
0.10
0.05
0.02
1
0.01
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
4 www.irf.com
Page 5
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIME NSIONS AR E S HO W N IN MIL L IMETER S (IN CHES ) .
4. OUT L IN E C ONF ORM S TO JED EC OU TLIN E MS -012AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D PR OTRU SIO N S NO T TO E XCEE D 0 .2 5 ( .0 06) .
DIMEN SIONS IS T HE L ENG T H O F L E AD F OR SO LDERING TO A S UBS TRAT E ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7811W
IN CHE S M ILL IME TE RS
DIM
MIN MAX MIN M AX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .00 7 5 .0 0 9 8 0 .19 0 . 2 5
D .18 9 .1 9 6 4.8 0 4 .9 8
E .150 .157 3 .81 3.99
e .0 5 0 B AS IC 1 .2 7 BA SIC
e1 .0 2 5 B AS IC 0 .63 5 BA SIC
H .22 8 4 .2 4 4 0 5 .80 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
www.irf.com 5
Page 6
IRF7811W
SO-8 Tape and Reel
TERMINAL NUMBER 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).
3. OUTLINE C ON FOR MS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CON FORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
6 www.irf.com
Loading...