Datasheet IRF7807D2 Datasheet (International Rectifier)

PD- 93762

IRF7807D2

FETKY™ MOSFET / SCHOTTKY DIODE

• Co-Pack N-channel HEXFET
and Schottky Diode

• Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output

• Low Conduction Losses

• Low Switching Losses

• Low Vf Schottky Rectifier



Power MOSFET

SO-8

A/S
A/S

A/S

G

1

2

3

4

Top View

Description

™

The FETKY

family of Co-Pack HEXFET MOSFETs

and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s
low forward drop Schottky rectifiers results in an e xtremely
efficient device suitable for use in a wide variety of
portable electronics applications.

Device Features (Max Values)

IRF7807D2

V

DS

30V
RDS(on) 25mΩ
Q

g

Q

SW

Q

oss

14nC

5.2nC

21.6nC

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO­8 package is designed for vapor phase, infrared or wave
soldering techniques.

Absolute Maximum Ratings

Parameter Symbol Max. Units

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain or Source 25°C I

DS

GS

D

30

±12

8.3
Current (VGS ≥ 4.5V) 70°C 6.6 A
Pulsed Drain Current I
Power Dissipation 25°C P

DM

D

66

2.5

70°C 1.6

Schottky and Body Diode 25°C I

(AV) 3.7 A

F

Average ForwardCurrent 70°C 2.3
Junction & Storage Temperature Range TJ, T

STG

–55 to 150 °C

8

K/D

7

K/D

6

K/D

5

K/D

V

W

Thermal Resistance

Parameter Max. Units

Maximum Junction-to-Ambient R

θJA

50 °C/W

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11/8/99

IRF7807D2

Electrical Characteristics

Parameter Min Typ Max Units Conditions

Drain-to-Source V

(BR)DSS

Breakdown Voltage*
Static Drain-Source RDS(on) 17 25 mΩ VGS = 4.5V, ID = 7A

on Resistance*
Gate Threshold Voltage* V
Drain-Source Leakage I

(th) 1.0 V VDS = VGS,ID = 250µA

GS

DSS

Current* 7.2 mA VDS = 24V, VGS = 0V,

30 V VGS = 0V, ID = 250µA

90 µAVDS = 24V, VGS = 0V

Tj = 125°C

Gate-Source Leakage I

GSS

+/- 100 nA VGS = +/-12V
Current*
Total Gate Charge Q

gsync

Synch FET* V
Total Gate Charge Q

gcont

Control FET* V
Pre-Vth Q

gs1

10.5 14 VDS<100mV,
= 5V, ID = 7A

GS

12 17 VDS= 16V,

= 5V, ID = 7A

GS

2.1 VDS = 16V, ID = 7A
Gate-Source Charge
Post-Vth Q

gs2

0.76 nC
Gate-Source Charge
Gate to Drain Charge Q
Switch Charge* Q
(Q

+ Qgd)

gs2

Output Charge* Q
Gate Resistance R

gd
SW

oss

g

2.9

3.66 5.2

17.6 21.6 VDS = 16V, VGS = 0

1.2 Ω

Schottky Diode & Body Diode Ratings and Characteristics

Parameter Min Typ Max Units Conditions

Diode Forward Voltage V

SD

0.54 V Tj = 25°C, Is = 3A, V

0.43 Tj = 125°C, Is = 3A, V

GS

GS

=0V

=0V
Reverse Recovery Time trr 36 ns Tj = 25°C, Is = 7.0A, VDS = 16V
Reverse Recovery Charge Qrr 41 nC di/dt = 100A/µs
Forward Turn-On Time t

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

on

 Repetitiv e rating; pulse width limited b y max. junction temperature.
 Pulse width ≤ 300 µs; duty cycle ≤ 2%.
 When mounted on 1 inch square copper board, t < 10 sec.
 50% Duty Cycle , Rectangular

* Devices are 100% tested to these parameters.

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IRF7807D2

100

VGS
TOP 4.5V

3.5V

3.0V
BOTTOM 2.5V

10

, Drain-to-Source Current (A)

D

I

380µs PULSE WIDTH
Tj = 25°C

1

0.1 1 10

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

70

VGS
TOP 4.5V

60

3.5V

3.0V

2.5V

50

2.0V
BOTTOM 0.0V

40

2.5V

100

VGS
TOP 4.5V

3.5V

3.0V
BOTTOM 2.5V

10

, Drain-to-Source Current (A)

D

I

380µs PULSE WIDTH

1

0.1 1 10

Tj = 150°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

70

VGS
TOP 4.5V

60

3.5V

3.0V

2.5V

50

2.0V
BOTTOM 0.0V

40

2.5V

30

20

, Source-to-Drain Current (A)

S

I

10

380µs PULSE WIDTH

0.0 V

Tj = 25°C

0

0 0.2 0.4 0.6 0.8 1

VSD, Source-to-Drain Voltage (V)

Fig 3. Typical Reverse Output Characteristics

30

20

, Source-to-Drain Current (A)

S

I

10

O.OV

380µS PULSE WIDTH
Tj = 150°C

0

0 0.2 0.4 0.6 0.8 1

VSD, Source-to-Drain Voltage (V)

Fig 4. Typical Reverse Output Characteristics

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IRF7807D2

2000

1600

1200

800

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

f = 1MHz

C

+ C
C
C

+ C

C

iss

C

oss

C SHORTED

C, Capacitance (pF)

400

C

0

1 10 100

V , Drain-to-Source Voltage (V)

DS

rss

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

2.0

ID = 7.0A
V

= 4.5V

GS

6

ID= 7.0A
V

= 16V

DS

4

2

, Gate-to-Source Voltage (V)

GS

V

0

0 4 8 12

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

)

(Α

TJ = 25°C

1.5

TJ = 150°C

1.0

, Drain-to-Source On Resistance

, Drain-to-Source Current

D

DS(on)

R

(Normalized)

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C )

Fig 7. Normalized On-Resistance

I

10

2.5 3.0 3.5

VGS, Gate-to-Source Voltage (V)

Fig 8. Typical Transfer Characteristics

V

= 10V

DS

380µs PULSE WIDTH

Vs. Temperature

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IRF7807D2

)

0.05

Ω

0.04

0.03

0.02

ID = 7.0A

, Drain-to -Source On Resistance (

DS(on)

0.01

R

2.0 4.0 6.0 8.0 10.0

V

Gate -to -Source Voltage (V)

GS,

Fig 9. On-Resistance Vs. Gate Voltage

100

0.024

( Ω )

0.022

VGS = 4.5V

0.020

0.018

DS (on)

0.016

R , Drain-to-Source On Resistance

0 20 40 60 80

I , Drain Current (A)

D

VGS = 10V

Fig 10. On-Resistance Vs. Drain Current

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

0.1

0.001 0.01 0.1 1 10 100

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET)

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IRF7807D2

Mosfet, Body Diode & Schottky Diode Characteristics

100

Tj = 125°C
Tj = 25°C

( A )

10

F

1

Instantaneous Forward Current - I

100

Tj = 150°C

10

( mA )

R

1

0.1

Reverse Current - I

0.01

0.001
0 5 10 15 20 25 30

125°C

100°C

75°C

50°C

25°C

Reverse Voltage - VR (V)

Fig. 13 - Typical Values of

Reverse Current Vs. Reverse Voltage

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage Drop - V

SD

( V )

Fig. 12 - Typical Forward Voltage Drop

Characteristics

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SO-8 Package Details

IRF7807D2

Part Marking

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IRF7807D2

Tape and Reel

TERMINAL NUMBER 1

12 .3 ( . 4 8 4 )
11 .7 ( . 4 6 1 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSIO N : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

NOTES :

1. CO NTRO LLING D IMENSION : MILLIMETER.

2. OUTLINE CONFORM S TO EIA-481 & EIA-541.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

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Data and specifications subject to change without notice. 11/99

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