Datasheet IRF7413 Datasheet (International Rectifier)

SMPS MOSFET

PD- 91330F

IRF7413

HEXFET® Power MOSFET

Applications

l High frequency DC-DC converters

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

to Simplify Design, (See

OSS

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

V

DSS

30V 11@VGS = 10V 12A

1

S

2

S

3

S

4

Top View

R

DS(on)

8

7

6

5

max(mW) I

A

D

DG

SO-8

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.6 A I

DM

PD @TA = 25°C Power Dissipation 2.5 W

V

GS

dv/dt Peak Diode Recovery dv/dt  1.0 V/ns T

J

T

STG

Pulsed Drain Current  96

Linear Derating Factor 0.02 W/°C Gate-to-Source Voltage ± 20 V

Operating Junction and -55 to + 150 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

D

°C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJL

R

θJA

Junction-to-Drain Lead ––– 20 Junction-to-Ambient  ––– 50 °C/W

Notes  through  are on page 8

www.irf.com 1

3/19/02

IRF7413

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 1020 ––– VGS = 0V, VDS = 0V to 24V 

oss

Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance mΩ

––– ––– 11 V ––– ––– 18 VGS = 4.5V, ID = 6.0A

= 10V, ID = 7.2A 

GS

Gate Threshold Voltage 1.0 ––– ––– VVDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 1.0 ––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100

µA

nA

V

= 24V, VGS = 0V

DS

= 20V

GS

V

= -20V

GS

Parameter Min. Typ. Max. Units Conditions Forward Transconductance 16 ––– ––– SVDS = 10V, ID = 7.2A Total Gate Charge ––– 44 66 ID = 7.2A Gate-to-Source Charge ––– 7.9 ––– nC VDS = 24V Gate-to-Drain ("Miller") Charge ––– 9.2 ––– VGS = 10V, Turn-On Delay Time ––– 8.8 ––– VDD = 100V Rise Time ––– 8.0 ––– ID = 7.2A Turn-Off Delay Time ––– 35 ––– RG = 6.2Ω

ns

Fall Time ––– 14 ––– VGS = 10V  Input Capacitance ––– 1670 ––– VGS = 0V Output Capacitance ––– 670 ––– VDS = 25V Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz Output Capacitance ––– 2290 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 680 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 120 mJ Avalanche Current ––– 7.2 A

Diode Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

3.1

96

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 7.2A, VGS = 0V  Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 7.2A Reverse RecoveryCharge ––– 74 110 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRF7413

100

) A

(

t

10

n

e

r

u C e

c

r

1

u

o

S

-

o

t

-

n

i

a

r

0.1

D

,

D

I

2.5V 20µs PULSE W IDTH

0.01

0.1 1 10 100

Tj = 2 5°C

VDS, Drain-to-Source Voltage (V)

100

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V B OTT OM 2. 5V

100

) A

(

t

n

e

r

10

u C e

c

r

u

o S

-

o

t

-

1

n

i

a

r D

,

D

I

2.5V

20µs PULSE W IDTH

0.1

0.1 1 10 100

Tj = 150°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

12A

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V B OTT OM 2. 5V

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

Fig 3. Typical Transfer Characteristics

TJ = 150°C

10

1

0

2.0 3.0 4.0 5.0 6.0

TJ = 25°C

V

= 15V

DS

20µs PULSE W IDTH

VGS, Gate-to-Source Voltage (V)

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF7413

100000

10000

) F

p

( e

c

n

a

t

i

c

a

p

a C

, C

1000

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

SHORTED C

= C

rss

C

= C

oss

Ciss Coss

Crss

VDS, Drain-to-Source Vol t age (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100.0

) A

(

t

n

e

r

10.0

u C n

i

a

r D

e

s

r

e

v

1.0

e R

,

D S

I

0.1

TJ = 150°C

0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Vol tage (V)

gs

gd

+ C

ds

TJ = 25°C

+ Cgd, C

gd

V

GS

ds

= 0V

12

ID= 7.2A

) V

10

( e

g

a

t

l

8

o V

e

c

r

u

6

o S

-

o

t

-

e

t

4

a G

,

S

2

G

V

0

0 1020304050

VDS= 24V VDS= 15V

VDS= 6.0V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D ,

I

D

1000

100

10

Tc = 25°C Tj = 150°C Single Pulse

1

0 1 10 100 1000

V

OPERATION IN THIS AREA LIMITED BY RDS(on)

, Drain-toSource V oltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF7413

12

10

8

6

4

D

I , Drain Current (A)

2

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

thJA

0.20

10

0.10

0.05 P

1 2

DM

t

1

t

2

0.02

1

0.01

Thermal Response (Z )

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty fa cto r D = t / t

2. Peak T = P x Z + T

J DM thJA A

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7413

)

0.024

Ω

( e

c

n

a

t

0.020

s

i

s

e R

n O

0.016

e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S

D

R

0.012

0.008

0.004

V

GS

= 4.5V

V

= 10V

GS

0 20406080

ID , Dr ain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

)

0.06

Ω

( e

c

n

0.05

a

t

s

i

s

e R

0.04

n O e

c

r

0.03

u

o S

o

t

-

0.02

n

i

a

r D

,

)

0.01

n

o

( S D

0.00

R

3.2 3.3 3.4 3.5 3.6 3.7

V

Gate -to - Source Voltage (V)

GS,

ID = 7.2A

Fig 13. On-Resistance Vs. Gate Voltage

300

TOP

250

200

150

BOTTOM

I

D

3.2A

4.6A

7.2A

100

15V

V

(BR)DSS

t

p

I

AS

V

R

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

DRIVER

+

V

DD

-

A

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Start ing T , Junction Temperature ( C)

J

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

6 www.irf.com

°

SO-8 Package Details

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

7

1

0

1

(

M

O

S

F

E

T

)

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

F

7

1

0

1

Y

W

X

P

A

R

T

N

U

M

B

E

R

L

O

T

C

O

D

E

W

=

W

E

K

Y

=

L

A

S

T

D

I

G

I

T

O

F

T

H

E

Y

E

A

R

D

A

T

E

C

O

D

E

(

Y

W

)

D B

A

87

6

E

e

6X

5

65

4312

e1

H

0.25 [.010] A

A

C

IRF7413

.0688 .0098 .020

.1968 .1574

.2440 .0196 .050

8°

MILL IME T E RSINCHES

MIN MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 BASIC

5.80

6.20

0.25

0.50

0.40

1.27 8°

0°

DIM

MIN MAX

A

.0532

A1

.0040

b

.013 c .0075 .0098 0.19 0.25 D

.189 E

.1497 e

.050 BASIC

e1

.025 BASIC 0.635 BASIC H

.2284 K

.0099 L

.016 y

0°

K x 45 °

y

8X b

0.25 [.010]

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT L INE CONFORMS T O JEDEC OUT L INE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

A1

CAB

SO-8 Part Marking

0.10 [.004] 8X L

7

6.46 [.255]

3X 1.27 [.050]

8X c

FOOT PRINT

8X 0.72 [.02 8]

8X 1.78 [.070]

www.irf.com 7

IRF7413

N

SO-8 Tape and Reel

TERMI NA L NU MBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

OTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS T O EIA-481 & EIA-541.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 4.4mH

J

= 7.2A.

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

330.00 (12.992) MAX.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

 When mounted on 1 inch square copper board

C

eff. is a fixed capacitance that gives the same charging time



oss

as C

 I

TJ ≤ 150°C

while V

oss

≤ 7.2A, di/dt ≤ 120A/µs, V

SD

is rising from 0 to 80% V

DS

DD

≤ V

(BR)DSS

DSS

,

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.3/02

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