Datasheet IRF6645, IRF6645TR1 Datasheet (International Rectifier)

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8/5/05

IRF6645

DirectFET Power MOSFET 

DirectFET ISOMETRIC

SJ

PD - 97006

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage

Typical values (unless otherwise specified)

Description

The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.

l RoHs Compliant Containing No Lead and Bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for High Performance Isolated Converter

Primary Switch Socket

l Optimized for Synchronous Rectification l Low Conduction Losses l Compatible with existing Surface Mount Techniques 

 Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET Website.  Surface mounted on 1 in. square Cu board, steady state.

 T

C

measured with thermocouple mounted to top (Drain) of part.

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

J

= 25°C, L = 5.0mH, RG = 25Ω, I

AS

= 3.4A.

Notes:

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ TA = 25°C

Continuous Drain Current, V

GS

@ 10V

e

ID @ TA = 70°C

Continuous Drain Current, V

GS

@ 10V

e

A

I

D

@ TC = 25°C

Continuous Drain Current, V

GS

@ 10V

f

I

DM

Pulsed Drain Current

g

E

AS

Single Pulse Avalanche Energy

h

mJ

I

AR

Avalanche Current

g

A

29

Max.

4.5

25

45

±20

100

5.7

3.4

4 6 8 10 12 14 16

VGS, Gate-to-Source Voltage (V)

20

30

40

50

60

70

80

T

y

p

i

c

a

l

R

D

S

(

o

n

)

(

m

Ω

)

TJ = 25°C

TJ = 125°C

ID = 3.4A

0481216

Q

G

Total Gate Charge (nC)

0

2

4

6

8

10

12

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

VDS= 80V

VDS= 50V

ID= 3.4A

V

DSS

V

GS

R

DS(on)

100V max ±20V max

28mΩ@ 10V

Q

g tot

Q

gd

V

gs(th)

14nC 4.8nC 4.0V

SH SJ SP MZ MN

IRF6645

2 www.irf.com

Notes:

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Repetitive rating; pulse width limited by max. junction temperature.

S

D

G

Electrical Characteristic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V

∆ΒV

DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 28 35

mΩ

V

GS(th)

Gate Threshold Voltage 3.0 ––– 4.9 V

∆V

GS(th)

/∆T

J

Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 7.4 ––– ––– S

Q

g

Total Gate Charge ––– 14 20

Q

gs1

Pre-Vth Gate-to-Source Charge ––– 3.1 –––

Q

gs2

Post-Vth Gate-to-Source Charge ––– 0.8 ––– nC

Q

gd

Gate-to-Drain Charge ––– 4.8 7.2

Q

godr

Gate Charge Overdrive ––– 5.3 ––– See Fig. 15

Q

sw

Switch Charge (Q

gs2

+ Qgd)

––– 5.6 –––

Q

oss

Output Charge ––– 7.2 ––– nC

R

G

Gate Resistance

–––

1.0 –––

Ω

t

d(on)

Turn-On Delay Time ––– 9.2 –––

t

r

Rise Time ––– 5.0 –––

t

d(off)

Turn-Off Delay Time ––– 18 ––– ns

t

f

Fall Time ––– 5.1 –––

C

iss

Input Capacitance ––– 890 –––

C

oss

Output Capacitance ––– 180 ––– pF

C

rss

Reverse Transfer Capacitance ––– 40 –––

C

oss

Output Capacitance ––– 870 –––

C

oss

Output Capacitance ––– 100 –––

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 25

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 45

(Body Diode)d

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 31 47 ns

Q

rr

Reverse Recovery Charge ––– 40 60 nC

I

D

= 3.4A

V

DS

= 80V, VGS = 0V, TJ = 125°C

V

GS

= 20V

V

GS

= -20V

V

GS

= 10V

VDS = 10V, ID = 3.4A

V

DS

= 50V

T

J

= 25°C, IF = 3.4A, VDD = 50V

di/dt = 100A/µs c

T

J

= 25°C, IS = 3.4A, VGS = 0V c

showing the

integral reverse

p-n junction diode.

V

DS

= VGS, ID = 50µA

V

DS

= 100V, VGS = 0V

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, ID = 5.7A c

V

DS

= 16V, VGS = 0V

V

DD

= 50V, VGS = 10Vc

V

GS

= 0V

ƒ = 1.0MHz

ID = 3.4A

MOSFET symbol

R

G

=6.2Ω

VDS = 25V

Conditions

VGS = 0V, VDS = 80V, f=1.0MHz

V

GS

= 0V, VDS = 1.0V, f=1.0MHz

IRF6645

www.irf.com 3

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

1

10

100

T

h

e

r

m

a

l

R

e

s

p

o

n

s

e

(

Z

t

h

J

A

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = Pdm x Zthja + Ta

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

 Surface mounted on 1 in. square Cu board (still air).

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)

 Mounted to a PCB with small clip heatsink (still air)

 Surface mounted on 1 in. square Cu, steady state.  Used double sided cooling , mounting pad.  Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Notes:

 T

C

measured with thermocouple incontact with top (Drain) of part.

 R

θ

is measured at T

J

of approximately 90°C.

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci= τi/Ri

τ

4

τ

4

R

4

R

4

τ

C

τ

C

τ

5

τ

5

R

5

R

5

Ri (°C/W) τi (sec)

0.6677 0.000066

1.0463 0.000896

1.5612 0.004386

29.2822 0.686180

25.4550 32

A

Absolute Maximum Ratings

Parameter Units

PD @TA = 25°C

Power Dissipation

c

W

P

D

@TA = 70°C

Power Dissipation

c

PD @TC = 25°C

Power Dissipation

f

T

P

Peak Soldering Temperature °C

T

J

Operating Junction and

T

STG

Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

Junction-to-Ambient

cg

––– 58

R

θJA

Junction-to-Ambient

dg

12.5 –––

R

θJA

Junction-to-Ambient

eg

20 ––– °C/W

R

θJC

Junction-to-Case

fg

––– 3.0

R

θJ-PCB

Junction-to-PCB Mounted 1.0 –––

270

-40 to + 150

Max.

42

3.0

1.4

IRF6645

4 www.irf.com

Fig 5. Typical Output Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Typical Transfer Characteristics

Fig 7. Normalized On-Resistance vs. Temperature

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Fig 9. Typical On-Resistance vs. Drain Current

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤60µs PULSE WIDTH

Tj = 25°C

6.0V

VGS

TOP 15V

10V

8.0V

7.0V

BOTTOM 6.0V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤60µs PULSE WIDTH

Tj = 150°C

6.0V

VGS

TOP 15V

10V

8.0V

7.0V

BOTTOM 6.0V

4.0 5.0 6.0 7.0 8.0

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

TJ = 150°C

TJ = 25°C

TJ = -40°C

V

DS

= 10V

≤

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

T

y

p

i

c

a

l

R

D

S

(

o

n

)

(

N

o

r

m

a

l

i

z

e

d

)

ID = 5.7A

V

GS

= 10V

1 10 100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ Cgd, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

0 10 20 30 40 50

ID, Drain Current (A)

20

30

40

50

60

T

y

p

i

c

a

l

R

D

S

(

o

n

)

(

m

Ω

)

TA= 25°C

VGS = 7.0V

V

GS

= 8.0V

V

GS

= 10V

V

GS

= 15V

IRF6645

www.irf.com 5

Fig 13. Typical Threshold Voltage vs.

Junction Temperature

Fig 12. Maximum Drain Current vs. Ambient Temperature

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig11. Maximum Safe Operating Area

Fig 14. Maximum Avalanche Energy vs. Drain Current

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VSD, Source-to-Drain Voltage (V)

0.1

1.0

10.0

100.0

I

SD

, Reverse Drain Current (A)

V

GS

= 0V

TJ = 150°C

TJ = 25°C

TJ = -40°C

25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

0

20

40

60

80

100

120

E

A

S

,

S

i

n

g

l

e

P

u

l

s

e

A

v

a

l

a

n

c

h

e

E

n

e

r

g

y

(

m

J

)

I

D

TOP

1.5A

2.4A

BOTTOM

3.4A

0.1 1.0 10.0 100.0 1000.0

V

DS

, Drain-toSource Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

TA = 25°C

Tj = 150°C Single Pulse

1msec

10msec

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

25 50 75 100 125 150

TJ , Ambient Temperature (°C)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

I

D

,

D

r

a

i

n

C

u

r

e

n

t

(

A

)

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

V

G

S

(

t

h

)

G

a

t

e

t

h

r

e

s

h

o

l

d

V

o

l

t

a

g

e

(

V

)

ID = 1.0A

ID = 1.0mA

ID = 250µA

ID = 50µA

IRF6645

6 www.irf.com

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 16c. Unclamped Inductive Waveforms

t

p

V

(BR)DSS

I

AS

Fig 16b. Unclamped Inductive Test Circuit

Fig 17b. Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

Fig 17a. Switching Time Test Circuit

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

GS

IRF6645

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DirectFET Substrate and PCB Layout, SJ Outline (Small Size Can, J-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

Re-Applied Voltage

Reverse Recovery Current

Body Diode Forward

Current

VGS=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

D =

P. W .

Period

* V

GS

= 5V for Logic Level Devices

*

Inductor Current

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance Current Transformer

• di/dt controlled by R

G

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

-

+

-







R

G

V

DD

D.U.T



G = GATE D = DRAIN S = SOURCE

G

S

D

S

IRF6645

8 www.irf.com

DirectFET Outline Dimension, SJ Outline (Small Size Can, J-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

DirectFET Part Marking

MIN

0.187

0.146

0.108

0.014

0.023

0.027

0.039

0.090

0.019

0.001

0.003

MAX

4.85

3.95

2.85

0.45

0.62

0.72

1.02

2.32

0.58

0.08

0.17

MIN

4.75

3.70

2.75

0.35

0.58

0.68

0.98

2.28

0.48

0.03

0.08

CODE A B C D E F G H K L M N P



MAX

0.191

0.156

0.112

0.018

0.024

0.028

0.040

0.091

0.023

0.003

0.007

DIMENSIONS

METRIC

IMPERIAL

IRF6645

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DirectFET Tape & Reel Dimension (Showing component orientation).

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/05

REEL DIMENS IONS

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6645). For 1000 parts on 7" reel, order IRF6645TR1

STANDARD OPTION (QTY 4800)

MIN

330.0

20.2

12.8

1.5

100.0 N.C

12.4

11.9

CODE A B C D E F G H

MAX N.C N.C

13.2 N.C N.C

18.4

14.4

15.4

MIN

12.992

0.795

0.504

0.059

3.937 N.C

0.488

0.469

MAX N.C N.C

0.520 N.C N.C

0.724

0.567

0.606

METRIC

IMPERIAL

TR1 OPTION (QTY 1000)

IMPERIAL

MIN

6.9

0.75

0.53

0.059

2.31 N.C

0.47

MAX N.C N.C

12.8 N.C N.C

13.50

12.01

MIN

177.77

19.06

13.5

1.5

58.72 N.C

11.9

METRIC

MAX N.C N.C

0.50 N.C N.C

0.53 N.C N.C

MIN

7.90

3.90

11.90

5.45

4.00

5.00

1.50

NOTE: CONTROLLING DIMENSIONS IN MM

MAX

8.10

4.10

12.30

5.55

4.20

5.20 N.C

1.60

MAX

0.319

0.161

0.484

0.219

0.165

0.205 N.C

0.063

DIMENSIONS

METRIC

IMPERIAL