Datasheet IRF1310N Datasheet (International Rectifier)

PD - 91504A

IRF1310N

HEXFET® Power MOSFET

l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

G

D

V

= 100V

DSS

R

DS(on)

= 0.036Ω

ID = 42A

S

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the

TO-220AB

industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
I

DM

PD @TC = 25°C Power Dissipation 160 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  140

Linear Derating Factor 1.1 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 420 mJ
Avalanche Current 22 A
Repetitive Avalanche Energy 16 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

Thermal Resistance

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.95
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

Parameter Typ. Max. Units

5/14/98

IRF1310N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.036 Ω VGS = 10V, ID = 22A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 14 ––– –– – S VDS = 25V, ID = 22A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 100V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 11 0 ID = 22A
Gate-to-Source Charge ––– ––– 15 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 58 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 56 ––– ID = 22A
Turn-Off Delay Time ––– 45 ––– RG = 3.6Ω

ns

Fall Time ––– 40 ––– RD = 2.9Ω, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 1900 –– – VGS = 0V
Output Capacitance ––– 450 ––– pF VDS = 25V
Reverse Transfer Capacitance –– – 230 – –– ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V 
Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 22A
Reverse RecoveryCharge ––– 1.2 1.8 µ C di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 I

SD

TJ ≤ 175°C

= 25°C, L = 1.7mH

J

= 22A. (See Figure 12)

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

42

A

140

≤ 22A, di/dt ≤ 180A/µs, V

showing the

p-n junction diode.



DD

≤ V

(BR)DSS

,

D

G

S

IRF1310N

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20us PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

o

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20us PULSE WIDTH
T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

o

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

I =

D

36A

100

10

D

I , Drain-to-Source Current (A)

1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V , Gate-to-Source Voltage (V)

GS

o

T = 25 C

J

o

T = 175 C

J

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V =

GS

o

10V

IRF1310N

3500

3000

2500

2000

1500

C, Capacitance (pF)

1000

500

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C

C SHORTED
C
C

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I =

22A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

V = 80V

DS

V = 50V

DS

V = 20V

DS

FOR TEST CIRCUIT

0

0 20 40 60 80 100 120

Q , Total Gate Charge (nC)

G

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

10

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

10

D

I , Drain Current (A)I , Drain Current (A)

o

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100 1000

o

J

V , Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

50

40

30

20

D

I , Drain Current (A)

10

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF1310N

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

10

thJC

1

D = 0.50

0.20

0.10

0.1

0.05

Thermal Response (Z )

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF1310N

A

15V

DRIVER

+

-

R

20V

V

DS

G

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

V

DD

1000

TOP

800

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

o

I

D

9.0A
16A
22A

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

-

D

Fig 13b. Gate Charge Test Circuit

DS

IRF1310N

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

-

+



-



-

+



R

G

Driver Gate Drive

P.W.

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P.W.

+

-

VGS=10V

V

DD

*

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFETS

Current

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

IRF1310N

A

A

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIM E N S IO N IN G & T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M , 1 9 8 2 . 3 OU T L IN E C O N F O R M S T O JE D E C O U T L IN E T O - 2 2 0 A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

10.29 (.405)

4

1 2 3

2X

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010

EXAMPLE : THIS IS AN IRF1010

W ITH ASSEMBLY

W ITH AS SEMBL Y

LOT CODE 9B1M

LOT C ODE 9 B1M

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045)
M IN

4.06 (.160)

3.55 (.140)

0.93 (.037)

3X

0.69 (.027)

0.36 (.01 4) M B A M

INTERN A TION A L

INTERNATIONAL

RE CTIFIER

RECTIF IER

L OGO

LOGO

ASSEMBLY

ASSEMBLY

LOT CODE

LOT CODE

4.69 (.185)

4.20 (.165)

- B -

I RF1010

IRF1010

9246

9B 1 M

9B 1 M

1.32 (.052)

1.22 (.048)

LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RC E
4 - DRA IN

0.55 (.022)

3X

0.46 (.018)

2.92 (.115)

2.64 (.104)

9246

PART NUMB ER

PART NUMBER

DATE CODE

DATE CODE

(YYWW)

(YYW W)

YY = YEAR

YY = YEAR

WW = WEEK

WW = WEEK

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http://www.irf.com/ Data and specifications subject to change without notice. 5/98