Datasheet IRF123, IRF122, IRF121 Datasheet (Intersil)

October 1997

Semiconductor

IRF120, IRF121,

IRF122, IRF123

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,
N-Channel, Power MOSFETs

Features

• 8.0A and 9.2A, 80V and 100V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.27Ω and 0.36Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF120 TO-204AA IRF120
IRF121 TO-204AA IRF121
IRF122 TO-204AA IRF122
IRF123 TO-204AA IRF123

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA09594.

Symbol

D

G

S

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

2-1

File Number 1565.2

IRF120, IRF121, IRF122, IRF123

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF120 IRF121 IRF122 IRF123 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

100 80 100 80 V
100 80 100 80 V

9.2

6.5

9.2

6.5

8.0

5.6

8.0

5.6

37 37 32 32 A

±20 ±20 ±20 ±20 V

60 60 60 60 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . .TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

36 36 36 36 mJ

-55 to 175 -55 to 175 -55 to 175 -55 to 175

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

IRF120, IRF122 100 - - V

= 250µA, VGS = 0V

(Figure 10)

IRF121, IRF123 80 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

GS(TH)VDS

DSSVDS

D(ON)VDS

= VGS, ID = 250µA 2.0 - 4.0 V
= Rated BV

VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 150oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V

IRF120, IRF121 9.2 - - A

IRF122, IRF123 8.0 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

GSSVGS

DS(ON)ID

IRF120, IRF121 - 0.25 0.27 Ω

= ±20V - - ±100 nA

= 5.6A, VGS = 10V

(Figure 8, 9)

IRF122, IRF123 0.27 0.36 Ω
Forward Transconductance (Note 2) g

VDS > I

fs

D(ON)

x r

DS(ON)MAX

, ID = 5.6A

2.9 4.0 - S

(Figure 12)

Turn-On Delay Time t

d(ON)VDD

= 50V, ID≈ 9.2A, RGS = 18Ω, RL = 5.1Ω

- 8.8 13 ns

(Figures 17, 18) MOSFET Switching Times are

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

Essentially Independent of Operating

r

Temperature

f

= 10V, ID = 5.6A, VDS = 0.8 x Rated BV

Ig

= 1.5mA (Figures 14, 19, 20)

(REF)

DSS,

-3045ns

-1929ns

-2030ns

- 9.7 15 nC

Gate Charge is Essentially Independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Operating Temperature

gs

gd

- 2.2 - nC

- 2.3 - nC

2-2

IRF120, IRF121, IRF122, IRF123

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ISSVDS

= 25V, VGS = 0V, f = 1MHz

- 350 - pF

(Figure 11)

OSS

RSS

Measured Between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die

Measured From the

S

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

- 130 - pF

-36-pF

- 5.0 - nH

- 12.5 - nH
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad

θJC

Free Air Operation - - 30oC/W

θJA

G

L

S

S

- - 2.5oC/W

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

SDM

Modified MOSFET

SD

Symbol Showing the

D

Integral Reverse P-N
Junction Rectifier

TJ = 25oC, ISD = 9.2A, VGS = 0V (Figure 13) - - 2.5 V

SD

TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs 55 110 240 ns

rr

TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs 0.25 0.53 1.10 µC

RR

G

S

- - 8.0 A

- - 32 A

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 640µH, RG = 25Ω, peak IAS= 9.2A (Figures 15, 16).

2-3

IRF120, IRF121, IRF122, IRF123

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

150

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

C/W)

o

0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

, THERMAL IMPEDANCE (

θJC

Z

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

175

10

8

6

IRF122

4

, DRAIN CURRENT (A)

D

I

2

0

25 50 75 100 125 150 175

IRF123

, CASE TEMPERATURE (oC)

T

C

IRF120
IRF121

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ= PDM x Z

-2

10

0.1 1 10

θJC

1/t2

+ T

C

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

100

IRF120, IRF121
IRF122, IRF123

10

10µs
100µs

15

10V

VGS = 8V

12

9

80µs PULSE TEST

1ms

OPERATION IN
THIS AREA LIMITED

BY r

1

, DRAIN CURRENT (A)

D

I

0.1

DS(ON)

TC = 25oC

= MAX RATED

T

J

SINGLE PULSE

110

VDS, DRAIN TO SOURCE VOLTAGE (V)

10ms
DC

IRF120, IRF122
IRF121, IRF123

100 1000

6

, DRAIN CURRENT (A)

3

D

I

0

0 10 20304050

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

2-4

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

IRF120, IRF121, IRF122, IRF123

Typical Performance Curves

15

80µs PULSE TEST

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

0 1.0 2.0 3.0 4.0 5.0

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

VGS = 10V

Unless Otherwise Specified (Continued)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

2.5

80µs PULSE TEST

2.0

VGS = 8V

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

100

VDS≥ 50V
80µs PULSE TEST

10

I

= 9.2A

D

V

GS

= 10V

TJ = 175oC

TJ = 25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

1

, DRAIN CURRENT (A)

D

I

0.1
0246810

3.0

2.4

1.5
VGS = 10V

1.0

0.5

, DRAIN TO SOURCE ON RESISTANCE

0

0 8 16 24 32 40

DS(ON)

r

I

, DRAIN CURRENT (A)

D

VGS = 20V

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-60 0 60 120 180
, JUNCTION TEMPERATURE (oC)

T

J

1.8

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.0

-60 0 60 120 180
T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1000

800

600

400

C, CAPACITANCE (pF)

200

0

110

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

VGS = 0V, f = 1MHz
C
C
C

C

ISS

C

OSS

C

RSS

= CGS + C

ISS

= C

RSS

≈ CDS + C

OSS

GD

GD

GS

100

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

2-5

IRF120, IRF121, IRF122, IRF123

Typical Performance Curves

5.0
VDS≥ 50V

80µs PULSE TEST

4.0

3.0

2.0

, TRANSCONDUCTANCE (S)

1.0

fs

g

0

0 3 6 9 12 15

I

D

TJ = 25oC

TJ = 175oC

, DRAIN CURRENT (A)

Unless Otherwise Specified (Continued)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

20

ID = 9.2A

16

100

10

TJ = 175oC

1

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1

0.0 0.4 0.8 1.2 1.6 2.0
, SOURCE TO DRAIN VOLTAGE (V)

V

SD

TJ = 25oC

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

VDS = 80V

= 50V

V

DS

= 20V

V

DS

12

8

4

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 3 6 9 12 15

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

t

0V

P

AS

R

G

, TOTAL GATE CHARGE (nC)

Q

g(TOT)

V

DS

L

+

V

DD

-

DUT

I

AS

0.01Ω

0

t

I

AS

BV

DSS

P

t

AV

V

DS

V

DD

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

2-6

IRF120, IRF121, IRF122, IRF123

Test Circuits and Waveforms

R

G

V

GS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

(Continued)

R

L

DUT

+

V

DD

-

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

t

ON

t

d(ON)

t

V

DS

90%

0

V

GS

10%

0

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

GS

t

OFF

50%

t

f

90%

10%

G

I

0

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

D

S

CURRENT

I

D

SAMPLING

DUT

V

DS

0

I

V

DS

0

G(REF)

FIGURE 20. GATE CHARGE WAVEFORMS

2-7