Datasheet IRF1104 Datasheet (International Rectifier)

TO-220AB

PD- 9.1724A

PRELIMINARY

HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.

The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

G

IRF1104

D

V

= 40V

DSS

R

S

= 0.009Ω

DS(on)

ID = 100A

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 100 
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 71 A
I

DM

PD @TC = 25°C Power Dissipation 170 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  400

Linear Derating Factor 1.11 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 350 mJ
Avalanche Current 60 A
Repetitive Avalanche Energy 17 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.90
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

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°C

4/24/98

IRF1104

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.009 Ω VGS = 10V, ID = 60A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 37 ––– ––– S VDS = 25V, ID = 60A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 40V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 93 ID = 60A
Gate-to-Source Charge ––– ––– 29 nC VDS = 32V
Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 15 ––– VDD = 20V
Rise Time ––– 114 ––– ID = 60A
Turn-Off Delay Time ––– 28 ––– RG = 3.6Ω

ns

Fall Time ––– 19 ––– RD = 0.33Ω, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 2900 ––– VGS = 0V
Output Capacitance ––– 1100 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

100

400

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 60A, VGS = 0V 
Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF = 60A
Reverse RecoveryCharge ––– 188 280 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 194µH

J

= 60A. (See Figure 12)

AS

≤ 60A, di/dt ≤ 304A/µs, V

DD

≤ V

(BR)DSS

 Caculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4

,

TJ ≤ 175°C

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D

S

IRF1104

1000

100

10

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

1000

J

1000

100

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

T = 175 C

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

I =

D

100A

°

T = 175 C

J

100

10

°

T = 25 C

J

1

D

I , Drain-to-Source Current (A)

V = 50V

DS

0.1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF1104

5000

4000

3000

2000

V

=

0V,

GS

C

=

C

iss gs gd , ds

C

=

C

rss gd

C

=

C

oss ds gd

C, Capacitance (pF)

1000

0

1 10 100

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

+ C
+ C

C

C

C

iss

oss

rss

f = 1MHz

C SHORTED

20

I =

60A

D

15

10

5

GS

V , Gate-to-Source Voltage (V)

0

0 25 50 75 100

Q , Total Gate Charge (nC)

G

V = 32V

DS

V = 20V

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.8 1.4 2.0 2.6

°

T = 175 C

J

°

T = 25 C

J

V ,Source-to-Drain Voltage (V)

SD

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

1000

100

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10us

100us

1ms

10ms

Forward Voltage

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100

LIMITED BY PACKAGE

80

60

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF1104

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

1

D = 0.50

thJC

0.20

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF1104

A

15V

DRIVER

+

-

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

800

TOP

I

D
24A
42A

600

BOTTOM

400

V

DD

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature( C)

J

60A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

-

D

Fig 13b. Gate Charge Test Circuit

V

DS

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IRF1104

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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IRF1104

A

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.29 (.405)

1 2 3

6.47 (.255)

6.10 (.240)

4

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - SOURCE
4 - D R A IN

1.40 (.0 55)

3X

1.15 (.0 45)

2.54 (.100)

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CON TR OLL IN G DIME N S ION : IN C H 4 H E A TS INK & L E A D M E A S U R E M E N T S DO NO T INCLUDE BURRS.

2X

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT C OD E 9B 1M

0.93 (.037)

3X

0.69 (.027)

0.36 (.014) M B A M

INT ER NA TIONAL
R E C T IF IE R
LOG O

AS SEMBLY
LOT CODE

3X

2.92 (.115)

2.64 (.104)

IRF1010

9246

9B 1M

0.55 (.022)

0.46 (.018)

PART NUMBER

DATE CODE
(YYW W)
YY = YEAR
WW = WEEK

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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

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http://www.irf.com/ Data and specifications subject to change without notice. 4/98

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