Datasheet IRF1010NSPBF Specification

PD - 94171

IRF1010NS

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing

G

IRF1010NL

HEXFET® Power MOSFET

D

S

V

DSS

R

DS(on)

ID = 85A

= 55V
= 11mΩ

techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on­resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low­profile applications.

2

D Pak

TO-262

IRF1010NLIRF1010NS

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  85
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  60 A
I

DM

PD @TC = 25°C Power Dissipation 180 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  3.6 V/ns
T

J

T

STG

Pulsed Drain Current  290

Linear Derating Factor 1.2 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 43 A
Repetitive Avalanche Energy 18 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

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Junction-to-Case ––– 0.85
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W

02/14/02

IRF1010NS/IRF1010NL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA 

J

Static Drain-to-Source On-Resistance ––– ––– 11 mΩ VGS = 10V, ID = 43A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 32 ––– ––– SVDS = 25V, ID = 43A

Drain-to-Source Leakage Current

––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 55V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 120 ID = 43A
Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 41 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 13 ––– VDD = 28V
Rise Time ––– 76 ––– ID = 43A
Turn-Off Delay Time ––– 39 ––– RG = 3.6Ω

ns

Fall Time ––– 48 ––– VGS = 10V, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 3210 ––– VGS = 0V
Output Capacitance ––– 690 ––– VDS = 25V
Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5 
Single Pulse Avalanche Energy ––– 1030250 mJ I

= 4.3A, L = 270µH

AS

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)

––– –––

––– –––

85

290

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V 
Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 43A
Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 270µH

J

= 43A, VGS=10V (See Figure 12)

AS

≤ 43A, di/dt ≤ 210A/µs, V

DD

≤ V

(BR)DSS

,

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.
 This is a typical value at device destruction and

 This is a calculated value limited to T

= 175°C .

J

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

 Uses IRF1010N data and test conditions.

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to

application note #AN-994.

represents operation outside rated limits.

2 www.irf.com

D

S

IRF1010NS/IRF1010NL

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

T = 25 C



J

°

T = 175 C



J

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH



T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

2.0

°

I =



D

85A

1.5

10

1.0

(Normalized)

D

I , Drain-to-Source Current (A)

V = 25V

DS



1

4 6 8 10 12

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C)

J



Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF1010NS/IRF1010NL

6000

5000

4000

3000

2000

C, Capacitance(pF)

1000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

= C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

Ciss

Coss

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

SHORTED

ds

20

I =

43A

D



V = 44V

DS

V = 27V

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 20 40 60 80 100 120

Q , Total Gate Charge (nC)

G

DS



V = 11V

DS

FOR TEST CIRCUIT



SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA
LIMITED BY RDS(on)

13

100

°

T = 175 C



J

10

1

SD

I , Reverse Drain Current (A)

0.1

0.0 0.6 1.2 1.8 2.4

V ,Source-to-Drain Voltage (V)

SD

°

T = 25 C



J

V = 0 V



GS

Fig 7. Typical Source-Drain Diode

100

100µsec

10

, Drain-to-Source Current (A)

D

Tc = 25°C

I

Tj = 175°C
Single Pulse

1

1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

1msec

10msec

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF1010NS/IRF1010NL

)

100



LIMITED BY PACKAGE

80

60

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

thJC

0.20

0.10

0.1

0.05

0.02

0.01

SINGLE PULSE



(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1

t , Rectangular Pulse Duration (sec

1

J DM thJC C

P

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1010NS/IRF1010NL

A

15V

DRIVER

+

-

V

DD

R

20V

V

DS

G

V

GS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR )DS S

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

500

TOP

400

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature( C)

J



BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

I

18A
30A
43A

°

D

50KΩ

Q

G

V

GS

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

6 www.irf.com

+

V

DS

-

IRF1010NS/IRF1010NL

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

V

DD

-

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 14. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

®

power MOSFETs

V

DD

[ ]

I

[ ]

SD

www.irf.com 7

IRF1010NS/IRF1010NL

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055)
MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTES:
1 D IMENS IO NS AF T ER SOLD ER DIP.
2 DIMENS IONING & TOLE RA N CING PE R A N SI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INC LUDE BURRS.

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.010) M B A M

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

LEAD ASSIGNM ENTS
1 - G ATE
2 - D RA IN
3 - S OU RC E

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

10.16 (.400)
REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

Part Marking Information

D2Pak

INTERNATIONAL
R E CT IF IER
L O GO

F530S

9246

9 B 1 M

A S SE MB LY
L O T CO DE

8 www.irf.com

PART NUMBER

DATE CODE
(YY WW)
YY = YEAR
WW = WEEK

Package Outline

TO-262 Outline

IRF1010NS/IRF1010NL

Part Marking Information

TO-262

www.irf.com 9

IRF1010NS/IRF1010NL

)

)

)

)

)

(

)

Tape & Reel Information

D2Pak

TRR

1.60 (.063)

1.50 (.059)

4.10 (.16 1)

3.90 (.15 3)

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532

12.80 (.504

330.00
(14.173)
MAX.

NOTES :

1. CO M F O R MS TO EIA-418.

2. CO NTROLLING DIMENSION: MILLIM ETER.

3. DIME NSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

15.42 (.6 09)

15.22 (.6 01)

27.40 (1.079

23.90 (.94 1
4

26.40 (1.039)

24.40 (.961)

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362
MIN.

30.40

1.197

MAX.

4

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 02/02

10 www.irf.com

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/