Datasheet IN74HC4094N, IN74HC4094D Datasheet (INTEGRAL)

Page 1
8-Bit Serial-Input Shift Register With Latched 3-State Outputs
High-Performance Silicon-Gate CMOS
The IN74HC4094 is identical in pinout to the LS/ALS4094. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs.
Data on the SQ the following negative transition of the clock input signal. The data of each stage of the shift register is provided with a latch, which latches data on the negative going transition of the Strobe input signal. When the Strobe inp ut is held high, d ata pro pagates through the latch to a 3 ­state output buffer.
This buffer is enabled when Output Enable input is taken high.
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 µA
High Noise Immunity Characteristic of CMOS Devices
output is transferred to a second output (SQH’) on
H
can be used to cascade several
H
TECHNICAL DATA
IN74HC4094
ORDERING INFORMATION
IN74HC4094N Plastic
IN74HC4094D SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
PIN 16 =V
PIN 8 = GND
CC
FUNCTION TABLE
Inputs Parallel
Clock Output
Enable
LXXZZQ6NC LXXZZNCSQ HLXNCNCQ6NC HHLLQ HHHHQ HXXNCNCNCSQ
NC = No Change Z = high impedance X = don’t care
Serial
Outputs
Strobe A QAQNSQHSQH’
N-1
N-1
Outputs
Q6 NC Q6 NC
H
H
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Page 2
IN74HC4094
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
V
CC
V
V
OUT
I
IN
I
OUT
I
CC
P
DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V
IN
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+
D
SOIC Package+
±
20
±
25
±
50
750 500
Tstg Storage Temperature -65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
260
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
mA mA mA
mW
°
C
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
VIN, V
T
A
tr, t
f
This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, V GND≤(V
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V Unused outputs must be left open.
DC Supply Voltage (Referenced to GND) 2.0 6.0 V DC Input Voltage, Output Voltage (Referenced to GND) 0 V
OUT
Operating Temperature, All Package Types -55 +125 Input Rise and Fall Time (Figure 1) VCC =2.0 V
IN
or V
OUT
)≤VCC.
V V
IN
=4.5 V
CC
=6.0 V
CC
and V
should be constrained to the range
OUT
0 0 0
CC
1000
500 400
°
ns
V
C
CC
).
516
Page 3
IN74HC4094
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Symbol Parameter Test Conditions V
V
V
V
OH
V
OL
I
IN
Minimum High-Level
IH
Input Voltage
Maximum Low -
IL
Level Input Voltage
Minimum High-Level Output Voltage
Maximum Low-Level Output Voltage
Maximum Input
V
= 0.1 V or VCC-0.1 V
OUT
≤
I
20 µA
OUT
V
=0.1 V or VCC-0.1 V
OUT
 ≤
I
20 µA
OUT
VIN=VIH or V
 ≤
I
OUT
VIN= VIH or V
 ≤
I
OUT
 ≤
I
OUT
VIN=VIH or V
 ≤
I
OUT
VIN= VIH or V
 ≤
I
OUT
 ≤
I
OUT
IL
20 µA
IL
4.0 mA
5.2 mA
IL
20 µA
IL
4.0 mA
5.2 mA
VIN=VCC or GND 6.0
Leakage Current
I
OZ
I
CC
Maximum Three­State Leakage Current
Maximum Qui escent Supply Current
Output in High-Impedance State V
= VIL or V
IN
V
OUT=VCC
IH
or GND
VIN=VCC or GND
=0µA
I
OUT
(per Package)
V
CC
Guaranteed Limit
25 °C
to
85
°
C
125
°
-55°C
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
3.98
5.48
0.1
0.1
0.1
0.26
0.26
±
0.1
±
0.5
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
3.84
5.34
0.1
0.1
0.1
0.33
0.33
±
1.0
±
5.0
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
3.7
5.2
0.1
0.1
0.1
0.4
0.4
±
±
6.0 4.0 40 160
C
1.0
10
Unit
V
V
V
V
µ
A
µ
A
µ
A
517
Page 4
IN74HC4094
AC ELECTRICAL CHARACTERISTICS
(CL=50pF,Input tr=tf=6.0 ns)
Symbol Parameter V
f
max
Maximum Clock Frequency (50 % Duty Cycle) (Figures 1 and 5)
t
PLH
, t
Maximum Propagatio n Delay, Clock to SQ
PHL
H
(Figures 1 and 5)
t
PLH
, t
Maximum Propagati on Delay, Clock to QA-Q
PHL
H
(Figures 2 and 5)
t
t
PLZ
PZL
, t
, t
C
IN
C
OUT
Maximum Propagation Delay ,Output Enable to
PHZ
Q
(Figures 3 and 6)
A-QH
Maximum Propagation Delay ,Output Enable to
PZH
Q
(Figures 3 and 6)
A-QH
Maximum Input Capacitance - 10 10 10 pF Maximum Three-State Output Capacitance
(Output in High-Impedance State), Q
A-QH
V
CC
Guaranteed Limit
25 °C
≤85°
C≤125°C
Unit
to
-55°C
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
6 30 35
150
30 26
195
40 33
125
25 21
175
35 30
5 25 28
190
38 33
245
50 42
155
31 26
220
44 37
4 20 23
225
45 38
295
60 50
190
38 32
265
53 45
MHz
ns
ns
ns
ns
-151515pF
Power Dissipation Capacitance (Per Package)
C
PD
TIMING REQUIREMENTS
Used to determine the no-load dynamic power consumption: P
D=CPDVCC
2
f+ICCV
CC
(CL=50pF,Input tr=tf=6.0 ns)
Symbol Parameter V
t
su
Minimum Setup Time, Serial Data Input A to Clock (Figure 4)
t
h
Minimum Hold T ime, Clock to Data Input A (Figure 4)
t
w
Minimum Pulse Width, Strobe (Figure 1)
tr, t
Maximum Input Rise and Fa ll Times
f
(Figure 1)
V
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
CC
Typical @25°C,V
Guaranteed Limit
25 °C to
-55°C 50
10
9.0 3
3 3
80 16 14
1000
500 400
=5.0 V
CC
300 pF
≤85°
65 13 11
3 3 3
100
20 17
1000
500 400
C
125°C
75 15 13
3 3 3
120
24 20
1000
500 400
Unit
ns
ns
ns
ns
518
Page 5
IN74HC4094
Figure 1. Switching Waveforms Figure 2. Switching Waveforms
Figure 3. Switching Waveforms Figure 4. Switching Waveforms
Figure 5. Test Circuit Figure 6. Test Circuit
519
Page 6
IN74HC4094
EXPANDED LOGIC DIAGRAM
520
Page 7
TIMING DIAGRAM
IN74HC4094
521
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