Datasheet IN74HC166N Datasheet (INTEGRAL)

Page 1
8-Bit Serial or Parallel-Input/ Serial-Output Shift Register
High-Performance Silicon-Gate CMOS
The IN74HC166 is identical in pinout to the LS/ALS166. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs.
•
Outputs Directly Interface to CMOS, NMOS, and TTL
•
Operating Voltage Range: 2.0 to 6.0 V
•
Low Input Current: 1.0 µA
•
High Noise Immunity Characteristic of CMOS Devices
TECHNICAL DATA
IN74HC166
ORDERING INFORMATION
IN74HC166N Plastic
IN74HC166D SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
PIN 16 =V
PIN 8 = GND
CC
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Page 2
IN74HC166
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
V
CC
V
V
OUT
I
IN
I
OUT
I
CC
P
DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V
IN
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+
D
SOIC Package+
±
20
±
25
±
50
750 500
Tstg Storage Temperature -65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
260
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
mA mA mA
mW
°
C
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
VIN, V
T
A
tr, t
f
This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, V GND≤(V
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V Unused outputs must be left open.
DC Supply Voltage (Referenced to GND) 2.0 6.0 V DC Input Voltage, Output Voltage (Referenced to GND) 0 V
OUT
Operating Temperature, All Package Types -55 +125 Input Rise and Fall Time (Figure 1) VCC =2.0 V
IN
or V
OUT
)≤VCC.
V
CC
V
CC
and V
IN
=4.5 V
=6.0 V
OUT
should be constrained to the range
0 0 0
CC
1000
500 400
V
°
C
ns
CC
).
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Page 3
IN74HC166
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Symbol Parameter Test Conditions V
V
V
V
OH
V
OL
I
IN
Minimum High-Level
IH
Input Voltage
Maximum Low -
IL
Level Input Voltage
Minimum High-Level Output Voltage
Maximum Low-Level Output Voltage
Maximum Input
V
=0.1 V or VCC-0.1 V
OUT
≤
I
20 µA
OUT
V
=0.1 V or VCC-0.1 V
OUT
 ≤
I
20 µA
OUT
VIN=VIH or V
 ≤
I
OUT
VIN=VIH or V
 ≤
I
OUT
 ≤
I
OUT
VIN=VIH or V
 ≤
I
OUT
VIN=VIH or V
 ≤
I
OUT
 ≤
I
OUT
IL
20 µA
IL
4.0 mA
5.2 mA
IL
20 µA
IL
4.0 mA
5.2 mA
VIN=VCC or GND 6.0
Leakage Current
I
CC
Maximum Qui escent Supply Current
VIN=VCC or GND
=0µA
I
OUT
(per Package)
V
CC
Guaranteed Limit
25 °C
to
≤
85
°
C
≤
125
°
-55°C
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
1.5
3.15
4.2
0.3
0.9
1.2
1.9
4.4
5.9
3.98
5.48
0.1
0.1
0.1
0.26
0.26
±
0.1
1.5
3.15
4.2
0.3
0.9
1.2
1.9
4.4
5.9
3.84
5.34
0.1
0.1
0.1
0.33
0.33
±
1.0
1.5
3.15
4.2
0.3
0.9
1.2
1.9
4.4
5.9
3.7
5.2
0.1
0.1
0.1
0.4
0.4
±
6.0 8.0 80 160
C
1.0
Unit
V
V
V
V
µ
A
µ
A
FUNCTION TABLE
Inputs Internal
Outputs
Clear Shift/Load Clock
Inhibit
Clock S
A
Parallel
Q
Q
A
A...H LXXXXXLLL HXX XX No change H L L X a...h a b h HHL HXHQAnQ HHL LXLQAnQ HXHXXX No change
X = don’t care a...h = the level of steady state input voltage at input A trough H respectively
Output
B
Q
H
Gn
Gn
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Page 4
IN74HC166
AC ELECTRICAL CHARACTERISTICS
(CL=50pF,Input tr=tf=6.0 ns)
Symbol Parameter V
f
max
Minimum Clock Frequency (50 % D ut y Cycle) (Figures 2 and 4)
t
PLH
t
, t
PHL
Maximum Propagation Delay, Clock (or Clock
PHL
Inhibit) to Q
(Figures 2,3 and 4)
H
Maximum Propagation Delay , Clear to Q
H
(Figures 1 and 4)
t
TLH
, t
Maximum Output Transition Time, Any Output
THL
(Figures 1 and 4)
C
IN
Maximum Input Capacitance - 10 10 10 pF
Power Dissipation Capacitance (Per Package)
C
PD
Used to determine the no-load dynamic power consumption: P
D=CPDVCC
2
f+ICCV
CC
V
CC
25 °C
to
-55°C
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
6.0 31 36
140
28 24
150
30 26
75 16 14
Typical @25°C,V
Guaranteed Limit
≤85°C≤
5.0 25 28
175
35 30
200
40 34
95 20 18
=5.0 V
CC
125°C
4.2 21 25
210
42 36
230
48 40
110
25 20
140 pF
Unit
MHz
ns
ns
ns
TIMING REQUIREMENTS
(CL=50pF,Input tr=tf=6.0 ns)
Symbol Parameter V
t
su
Minimum Setup Time, Shift/Load to Clock (Figure 3)
t
su
Minimum Setup Time, Data before Clock (or Clock Inhibit) (F igure 3)
t
w
Minimum Pulse Width, Cl ock (or Clock Inhibit) (Figure 2)
238
V
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
CC
Guaranteed Limit
25 °C to
-55°C 80
16 14
80 16 14
80 16 14
≤85°
100
20 18
100
20 18
100
20 17
≤
C
125°C
120
Unit
ns 24 20
120
ns 24 20
120
ns 24 20
Page 5
IN74HC166
Figure 1. Switching Waveforms Figure 2. Switching Waveforms
Figure 3. Switching Waveforms
Figure 4. Test Circuit
239
Page 6
IN74HC166
TIMING DIAGRAM
EXPANDED LOGIC DIAGRAM
240
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